Multifunctional collimator for contact image sensors
Disclosed is a cost-effective method to fabricate a multifunctional collimator structure for contact image sensors to filter ambient infrared light to reduce noises. In one embodiment, an optical collimator, includes: a dielectric layer; a substrate; a plurality of via holes; and a conductive layer, wherein the dielectric layer is formed over the substrate, wherein the plurality of via holes are configured as an array along a lateral direction of a first surface of the dielectric layer, wherein each of the plurality of via holes extends through the dielectric layer and the substrate from the first surface of the dielectric layer to a second surface of the substrate in a vertical direction, and wherein the conductive layer is formed over at least one of the following: the first surface of the first dielectric layer and a portion of sidewalls of each of the plurality of via holes, and wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths.
1. An optical collimator, comprising:
a dielectric layer;
a substrate;
at least one via hole; and
a conductive layer,
wherein the dielectric layer is formed over the substrate, wherein the at least one via hole extends through the dielectric layer and the substrate in a vertical direction,
wherein the conductive layer is formed over both a surface of the dielectric layer and the portion of sidewalls of the at least one via hole, and wherein a first thickness of the conductive layer over the surface of the dielectric layer is greater than a second thickness of the conductive layer over the sidewalls of the at least one via hole, and
wherein the first thickness of the conductive layer over the surface of the dielectric layer is approximately 20 nanometers and the second thickness of the conductive layer over the sidewalls of the at least one via hole is approximately 2 nanometers.
2. The optical collimator of claim 1 , wherein the conductive layer comprises aluminum copper (AlCu) alloy.
3. The optical collimator of claim 1 , wherein a first depth of the portion of sidewalls with the conductive layer is approximately 3,000 nanometers, wherein the first depth is measured from the first surface of the dielectric layer.
4. The collimator of claim 1 , wherein the at least one via hole comprises a plurality of via holes.
5. The collimator of claim 1 , wherein each of the plurality of via holes has a dimension of approximately 0.05 micrometers.
6. The collimator of claim 1 , wherein the substrate is a silicon substrate and a first thickness of the dielectric layer is approximately 1.0 micrometer and a second thickness of the substrate is approximately 6 micrometers.
7. The collimator of claim 1 , wherein the conductive layer is configured so as to allow the optical collimator to filter light in a range of wavelengths between 780 and 1400 nanometers.
8. A semiconductor device, comprising:
at least one optical sensing element; and
an optical collimator;
wherein the optical collimator comprises: a first dielectric layer, a first substrate, a plurality of via holes, and a conductive layer, wherein the first dielectric layer is formed over the first substrate, wherein each of the plurality of via holes extends through the first dielectric layer and the first substrate,
wherein the conductive layer is formed so as to allow the optical collimator to filter light in a range of wavelengths,
wherein the conductive layer is formed over both a first surface of the first dielectric layer and the portion of sidewalls of the plurality of via holes, and wherein a first thickness of the conductive layer over the surface of the dielectric layer is greater than a second thickness of the conductive layer over the sidewalls of the plurality of via holes, and
wherein the first thickness of the conductive layer over the surface of the dielectric layer is approximately 20 nanometers and the second thickness of the conductive layer over the sidewalls of the at least one via hole is approximately 2 nanometers.
9. The semiconductor device of claim 8 , wherein the at least one optical sensing element is formed in a second substrate, wherein the second substrate is further coated with a second dielectric layer, and wherein the optical collimator is formed over the second dielectric layer.
10. The semiconductor device of claim 8 , wherein the conductive layer comprises aluminum copper (AlCu) alloy.
11. The semiconductor device of claim 8 , wherein a first depth of the portion of sidewalls with the conductive layer is approximately 3,000 nanometers, wherein the first depth is measured from the first surface of the dielectric layer.
12. The semiconductor device of claim 11 , wherein the first substrate is a silicon substrate and a first thickness of the dielectric layer is approximately 1.0 micrometer.
13. The semiconductor device of claim 12 , wherein each of the plurality of via holes has a dimension of approximately 0.05 micrometers.
14. The semiconductor device of claim 12 , wherein a second thickness of the substrate is approximately 6 micrometers.
15. The semiconductor device of claim 8 , wherein the range of wavelengths is between 780 and 1400 nanometers.
16. A method for forming a semiconductor device, comprising:
forming a collimator structure on a first substrate with a first dielectric layer, wherein the collimator structure comprises a plurality of via holes, wherein each of the plurality of via holes extends through the first dielectric layer and the first substrate in a vertical direction; and
forming a conductive layer over both a first surface of the first dielectric layer and a portion of sidewalls of the plurality of via holes, and wherein a first thickness of the conductive layer over the surface of the dielectric layer is greater than a second thickness of the conductive layer over the sidewalls of the plurality of via holes,
wherein the first thickness of the conductive layer over the first surface of the first dielectric layer is approximately 20 nanometers and the second thickness of the conductive layer over the portion of sidewalls of each of the plurality of via holes is approximately 2 nanometers.
17. The method of claim 16 , wherein the conductive layer comprises aluminum copper (AlCu) alloy.
18. The method of claim 16 , wherein each of the plurality of via holes has a dimension of approximately 0.05 micrometers, and wherein a first thickness of the first dielectric layer is approximately 1.0 micrometer.
19. The method of claim 18 , wherein the conductive layer is formed over the portion of sidewalls of each of the plurality of via holes, and wherein a first depth of the portion of side walls with the conductive layer is approximately 3000 nanometers, wherein the first depth is measured from the first surface of the first dielectric layer.
20. The method of claim 18 , wherein a second thickness of the first substrate is approximately 6 micrometers.