Power supply line arrangement having power switch circuit
A semiconductor device includes first and second power supply lines formed in a first wiring layer and extending in a first direction; third and fourth power supply lines formed in a second wiring layer, extending in a second direction, and connected to the first and second power supply lines, respectively; a fifth power supply line formed in the first wiring layer; and a first power switch circuit including a transistor provided between the first and fifth power supply lines. The transistor overlaps at least one of the third and fourth power supply lines. The first power switch circuit includes first and second wirings formed in the second wiring layer, extending in the second direction, not overlapping the third and fourth power supply lines, and connected to a source of the transistor and the fifth power supply line, and to a drain and the third power supply line, respectively.
1. A semiconductor device comprising:
a first power supply line formed in a first wiring layer and extending in a first direction in a plan view;
a second power supply line formed in the first wiring layer and extending in the first direction;
a third power supply line formed in a second wiring layer provided above the first wiring layer, extending in a second direction different from the first direction in the plan view, and connected to the first power supply line;
a fourth power supply line formed in the second wiring layer, extending in the second direction, and connected to the second power supply line;
a fifth power supply line formed in the first wiring layer; and
a first power switch circuit including a transistor provided between the first power supply line and the fifth power supply line,
wherein the transistor is positioned in the plan view overlapping one of or both of the third power supply line and the fourth power supply line, and
wherein the first power switch circuit includes
a first wiring formed in the second wiring layer, electrically connected to a source region of the transistor and to the fifth power supply line, extending in the second direction, and overlapping neither the third power supply line nor the fourth power supply line in the plan view above the transistor, and
a second wiring formed in the second wiring layer, electrically connected to a drain region of the transistor and to the third power supply line, extending in the second direction, and overlapping neither the third power supply line nor the fourth power supply line in the plan view above the transistor.
2. The semiconductor device according to claim 1 ,
wherein the first power switch circuit further includes
a third wiring extending in the first direction above the transistor, and electrically connected to the drain region and to the second wiring, and
wherein the third power supply line is connected to the third wiring through a via above the transistor.
3. The semiconductor device according to claim 1 ,
wherein the fourth power supply line is connected to the second power supply line through a via above the transistor.
4. The semiconductor device according to claim 1 , comprising:
a plurality of the third power supply lines;
a plurality of the fourth power supply lines; and
a plurality of the first power switch circuits, wherein;
the plurality of the third power supply lines and the plurality of the fourth power supply lines are repeatedly arranged at a first pitch in the first direction, and
a relative position at which the transistor overlaps at least one of the third power supply line and the fourth power supply line in the plan view is the same for each of the plurality of the first power switch circuits.
5. The semiconductor device according to claim 1 , further comprising:
a first region including the first power supply line, the second power supply line, the third power supply line, the fourth power supply line, wherein:
a plurality of the first power switch circuits are provided in the first region, a logic circuit is disposed in the first region, and
the first region includes an area in which a frequency of arrangement of the first power switch circuit is higher than a frequency of arrangement of the first power switch circuit in other areas.
6. The semiconductor device according to claim 5 , further comprising:
a second region disposed adjacent to the first region and including a functional circuit different from the logic circuit,
wherein the area, in which the frequency of arrangement of the first power switch circuit is high, is adjacent to the second region.
7. The semiconductor device according to claim 5 , further comprising:
a second power switch circuit disposed in the first region, and including a transistor overlapping neither the third power supply line nor the fourth power supply line.
8. The semiconductor device according to claim 1 ,
wherein the transistor is a finFET.
9. The semiconductor device according to claim 1 , further comprising:
a first region including the first power supply line, the second power supply line, the third power supply line and the fourth power supply line; and
a plurality of the first power switch circuits provided in the first region, wherein:
a logic circuit is disposed in the first region, and
the first region includes an area in which an arrangement pitch of first power switch circuits is smaller than an arrangement pitch of first power switch circuits in other areas.
10. The semiconductor device according to claim 9 , further comprising:
a second region disposed adjacent to the first region and including a functional circuit different from the logic circuit,
wherein the area is adjacent to the second region.
11. The semiconductor device according to claim 9 , further comprising:
a second power switch circuit disposed in the first region, and including a transistor overlapping neither the third power supply line nor the fourth power supply line.