3D inductor design using bundle substrate vias
A three dimensional (3D) inductor is described. The 3D inductor includes a first plurality of micro-through substrate vias (TSVs) within a first area of a substrate. The 3D inductor also includes a first trace on a first surface of the substrate, coupled to a first end of the first plurality of micro-TSVs. The 3D inductor further includes a second trace on a second surface of the substrate, opposite the first surface, coupled to a second end, opposite the first end, of the first plurality of micro-TSVs.
1. A three dimensional (3D) inductor, comprising:
a first plurality of micro-through substrate vias (TSVs) within a first area of a substrate, each micro-TSV having a diameter of less than twenty micrometers, the first plurality of micro-TSVs arranged in multiple columns and multiple rows, the first area of the substrate corresponding to a macro-TSV opening of the substrate having a diameter of more than eighty micrometers;
a first trace on a first surface of the substrate, coupled to a first end of the first plurality of micro-TSVs; and
a second trace on a second surface of the substrate, opposite the first surface, coupled to a second end, opposite the first end, of the first plurality of micro-TSVs.
2. The 3D inductor of claim 1 , in which a space between two micro-TSVs of the first plurality of micro-TSVs is less than a space between the first area of the substrate corresponding to a form factor of a macro-TSV and a second area of the substrate corresponding to the form factor of the macro-TSV.
3. The 3D inductor of claim 1 , in which the 3D inductor is integrated in an integrated passive device (IPD).
4. The 3D inductor of claim 3 , in which the IPD is integrated in an IPD filter die.
5. The 3D inductor of claim 4 , in which the IPD filter die is integrated in a radio frequency front-end (RFFE) module.
6. A method for fabricating a three dimensional (3D) inductor, the method comprising:
forming a first plurality of micro-through substrate vias (TSVs) within a first area of a substrate, each micro-TSV having a diameter of less than twenty micrometers, the first plurality of micro-TSVs arranged in multiple columns and multiple rows, the first area of the substrate corresponding to a macro-TSV opening of the substrate;
depositing a first trace on a first surface of the substrate to contact a first end of the first plurality of micro-TSVs; and
depositing a second trace on a second surface of the substrate, opposite the first surface, to contact a second end, opposite the first end, of the first plurality of micro-TSVs.
7. The method of claim 6 , in which forming the first plurality of micro-TSVs comprises uniformly spacing the first plurality of micro-TSVs, in which a space between two micro-TSVs of the first plurality of micro-TSVs is less than a space between the first area of the substrate corresponding to a form factor of a macro-TSV and a second area of the substrate corresponding to the form factor of the macro-TSV.
8. The method of claim 6 , further comprising integrating the 3D inductor in an integrated passive device (IPD).
9. The method of claim 8 , further comprising integrating the IPD in an IPD filter die.
10. The method of claim 9 , further comprising integrating the IPD filter die in a radio frequency front-end (RFFE) module.