Semiconductor device having a plurality of channel layers and method of manufacturing the same
A semiconductor device includes a first semiconductor layer having first and second regions, a plurality of first channel layers spaced apart from each other in a vertical direction on the first region of the first semiconductor layer, a first gate electrode surrounding the plurality of first channel layers, a plurality of second channel layers spaced apart from one another in the vertical direction on the second region of the first semiconductor layer, and a second gate electrode surrounding the plurality of second channel layers, wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation, and wherein a thickness of each of the plurality of first channel layers is different from a thickness of each of the plurality of second channel layers.
1. A semiconductor device, comprising:
a first semiconductor layer including a first region and a second region;
a plurality of first channel layers spaced apart from each other in a vertical direction on the first semiconductor layer in the first region;
a first gate electrode surrounding the plurality of first channel layers;
a plurality of second channel layers spaced apart from one another in the vertical direction on the first semiconductor layer in the second region; and
a second gate electrode surrounding the plurality of second channel layers,
wherein each of the plurality of first channel layers has a first crystallographic orientation, and each of the plurality of second channel layers has a second crystallographic orientation different from the first crystallographic orientation,
the plurality of second channel layers include a first channel component layer, a second channel component layer and a third channel component layer, and
a thickness of the third channel component layer is greater than thicknesses of the first channel component layer and the second channel component layer.
2. The semiconductor device as claimed in claim 1 ,
wherein a thickness of the second channel component layer is greater than a thickness of the first channel component layer.
3. The semiconductor device as claimed in claim 2 ,
wherein the first channel component layer, the second channel component layer, and the third channel component layer are disposed in that sequence on the first semiconductor layer in the second region.
4. The semiconductor device as claimed in claim 1 ,
wherein the thickness of the third channel component layer is greater than a thickness of at least one of the plurality of first channel layers.
5. The semiconductor device as claimed in claim 1 ,
wherein a thickness of the second channel component layer is greater than a thickness of the first channel component layer, and
wherein a thickness of at least one of the plurality of first channel layers is greater than the thickness of the first channel component layer.
6. The semiconductor device as claimed in claim 1 ,
wherein a level of an upper surface of the first semiconductor layer in the first region is higher than a level of an upper surface of the first semiconductor layer in the second region.
7. The semiconductor device as claimed in claim 1 ,
wherein the first crystallographic orientation is a (100) orientation, and the second crystallographic orientation is a (110) orientation.
8. The semiconductor device as claimed in claim 1 ,
wherein the plurality of first channel layers include a material that is not a material of the plurality of second channel layers.
9. The semiconductor device as claimed in claim 1 , wherein:
the plurality of first channel layers include at least one of Si, SiGe, InGaAs, InAs, GaSb, InSb, InP/InGaAs/InAs, GaAs/InP/InAs, GaAs/InGaAs/InAs, GaAs/InAlAs/InAs, InP/InGaAs/InP, GaAs/InAs, GaAs/InGaAs, and InP/InGaAs, and
each of the plurality of second channel layers is an Si layer.
10. A semiconductor device, comprising:
a first semiconductor layer including a first region and a second region;
a buried insulating layer on the first semiconductor layer in the first region;
a second semiconductor layer on the buried insulating layer;
a base layer on the first semiconductor layer in the second region;
a plurality of first channel layers spaced apart from each other in a vertical direction on the first semiconductor layer in the first region;
a first gate electrode surrounding the plurality of first channel layers;
a plurality of second channel layers spaced apart from one another in the vertical direction on the base layer in the second region; and
a second gate electrode surrounding the plurality of second channel layers,
wherein the first semiconductor layer has a first crystallographic orientation, and the second semiconductor layer has a second crystallographic orientation different from the first crystallographic orientation,
wherein the plurality of second channel layers include a first channel component layer, a second channel component layer, and a third channel component layer formed in that sequence on the first semiconductor layer in the second region,
wherein a thickness of the third channel component layer is greater than a thickness of the second channel component layer, and
the thickness of the second channel component layer is greater than a thickness of the first channel component layer.
11. The semiconductor device as claimed in claim 10 ,
wherein the first region includes an n-type metal oxide semiconductor (NMOS) region and the second region includes a p-type metal oxide semiconductor (PMOS) region.
12. The semiconductor device as claimed in claim 10 , wherein:
each of the first semiconductor layer and the second semiconductor layer is a silicon layer,
the first semiconductor layer has a (110) crystallographic orientation, and
the second semiconductor layer has a (100) crystallographic orientation.
13. The semiconductor device as claimed in claim 10 ,
wherein the base layer has the first crystallographic orientation.
14. The semiconductor device as claimed in claim 10 ,
wherein a thickness of the base layer is greater than a thickness of each of the buried insulating layer and the second semiconductor layer.
15. The semiconductor device as claimed in claim 10 ,
wherein a level of an upper surface of the second semiconductor layer under the first gate electrode is different from a level of an upper surface of the base layer under the second gate electrode.
16. The semiconductor device as claimed in claim 10 , further comprising:
a device isolation layer covering an upper surface of the first semiconductor layer and a side surface of the base layer in the second region.
17. The semiconductor device as claimed in claim 10 , further comprising:
source/drain regions on opposite sides of each of the plurality of first channel layers; and
an interlayer insulating layer covering an upper surface of the buried insulating layer, a side surface of the second semiconductor layer, and the source/drain regions.