Block family-based error avoidance for memory devices
An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to initialize a block family associated with a memory device; initialize a timeout associated with the block family; initializing a low temperature and a high temperature using a reference temperature at the memory device; responsive to programming a block residing on the memory device, associate the block with the block family; and responsive to at least one of: detecting expiration of the timeout or determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, close the block family.
1. A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, the processing device to:
associate, with a first threshold voltage offset bin, a current block family associated with the memory device;
responsive to programming a first block residing on the memory device, associate the first block with the current block family;
associate the current block family with a second threshold voltage offset bin; and
read, using a threshold voltage offset associated with the second threshold voltage offset bin, data from a second block of the current block family.
2. The system of claim 1 , wherein associating the block with the current block family further comprises:
appending, to block family metadata, a record associating the first block with the current block family.
3. The system of claim 2 , wherein the block family metadata comprises a first table including a plurality of records, wherein a record of the plurality of records associates the first block with the current block family.
4. The system of claim 2 , wherein the block family metadata comprises a second table including a plurality of records, wherein each record of the plurality of records associates a plurality of dies of the current block family with respective threshold voltage offset bins.
5. The system of claim 2 , wherein the block family metadata comprises a third table including a plurality of records, wherein each record of the plurality of records associates a corresponding threshold voltage offset bin with one or more threshold voltages to be applied to respective base voltage read levels for performing read operations.
6. The system of claim 1 , wherein the processing device is further to:
initialize a low temperature and a high temperature using a reference temperature at the memory device;
responsive to determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, close the current block family.
7. The system of claim 6 , wherein the processing device is further to:
receive a second reference temperature of the current block family;
responsive to determining that the second reference temperature is greater than or equal to the high temperature, update the high temperature to store the second reference temperature; and
responsive to determining that the second reference temperature falls below the low temperature, update the low temperature to store the second reference temperature.
8. The system of claim 6 , wherein the processing device is further to:
responsive to closing the current block family, initialize a new block family.
9. The system of claim 1 , wherein the current block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.
10. A method, comprising:
associating, by a processing device, with a first threshold voltage offset bin, a current block family associated with a memory device;
responsive to programming a first block residing on the memory device, associating the first block with the current block family;
associating the current block family with a second threshold voltage offset bin; and
reading, using a threshold voltage offset associated with the second threshold voltage offset bin, data from a second block of the current block family.
11. The method of claim 10 , wherein associating the block with the current block family further comprises:
appending, to block family metadata, a record associating the first block with the current block family.
12. The method of claim 10 , further comprising:
initializing a low temperature and a high temperature using a reference temperature at the memory device;
responsive to determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, closing the current block family.
13. The method of claim 12 , further comprising:
responsive to closing the current block family, initializing a new block family.
14. The method of claim 10 , wherein the current block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.
15. A computer-readable non-transitory storage medium comprising executable instructions that, when executed by a processing device, cause the processing device to:
associate, with a first threshold voltage offset bin, a current block family associated with a memory device;
responsive to programming a first block residing on the memory device, associate the first block with the current block family;
associate the current block family with a second threshold voltage offset bin; and
read, using a threshold voltage offset associated with the second threshold voltage offset bin, data from a second block of the current block family.
16. The computer-readable non-transitory storage medium of claim 15 , wherein associating the block with the current block family further comprises:
appending, to block family metadata, a record associating the first block with the current block family.
17. The computer-readable non-transitory storage medium of claim 15 , further comprising executable instructions that, when executed by the processing device, cause the processing device to:
initialize a low temperature and a high temperature using a reference temperature at the memory device;
responsive to determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, close the current block family.
18. The computer-readable non-transitory storage medium of claim 17 , further comprising executable instructions that, when executed by the processing device, cause the processing device to:
receive a second reference temperature of the current block family;
responsive to determining that the second reference temperature is greater than or equal to the high temperature, update the high temperature to store the second reference temperature; and
responsive to determining that the second reference temperature falls below the low temperature, update the low temperature to store the second reference temperature.
19. The computer-readable non-transitory storage medium of claim 17 , further comprising executable instructions that, when executed by the processing device, cause the processing device to:
responsive to closing the current block family, initialize a new block family.
20. The computer-readable non-transitory storage medium of claim 15 , wherein the current block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.