Substrate processing method and substrate processing device
The present disclosure provides a substrate processing method and a substrate processing apparatus that perform selective film formation. The substrate processing method includes: forming a silicon-containing film by repeating forming an adsorption layer on a substrate on which a pattern of a concave portion is formed by supplying a silicon-containing gas to the substrate and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer; and etching the silicon-containing film, wherein the forming the silicon-containing film includes modifying at least one of the adsorption layer and the silicon-containing film by generating a He-containing plasma.
1. A substrate processing method comprising:
forming a silicon-containing film by repeating forming an adsorption layer on a substrate on which a pattern of a concave portion is formed by supplying a silicon-containing gas to the substrate and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer; and
etching the silicon-containing film,
wherein the forming the silicon-containing film includes modifying at least one of the adsorption layer or the silicon-containing film by generating a He-containing plasma, and
wherein an opening width of the concave portion is shorter than a wavelength of light emitted from the He-containing plasma.
2. The substrate processing method of claim 1 , wherein, in the modifying the at least one of the adsorption layer or the silicon-containing film:
the He-containing plasma emits the light; and
the at least one of the adsorption layer or the silicon-containing film is modified by being irradiated with the light emitted from the He-containing plasma.
3. The substrate processing method of claim 2 , wherein, in the modifying the at least one of the adsorption layer or the silicon-containing film, the at least one of the adsorption layer or the silicon-containing film formed on an upper portion of the pattern formed on the substrate is modified.
4. The substrate processing method of claim 3 , wherein, the modifying the at least one of the adsorption layer or the silicon-containing film improves an etching resistance of the silicon-containing film.
5. The substrate processing method of claim 4 , wherein the modifying the at least one of the adsorption layer or the silicon-containing film is performed after repeating the forming the adsorption layer and the generating the plasma of the reaction gas.
6. The substrate processing method of claim 5 , wherein the forming the silicon-containing film and the etching the silicon-containing film are repeated.
7. The substrate processing method of claim 6 , wherein the silicon-containing film is a SiN film.
8. The substrate processing method of claim 7 , wherein the silicon-containing gas includes at least one selected from the group consisting of a halogen-containing silicon-based gas, an aminosilane gas, a SiH 4 gas, and a trisilylamine (TSA) gas.
9. The substrate processing method of claim 8 , wherein the reaction gas includes at least one selected from the group consisting of a NH 3 gas, a N 2 gas, a hydrazine, and a hydrazine derivative gas.
10. The substrate processing method of claim 1 , wherein, in the modifying the at least one of the adsorption layer or the silicon-containing film, the at least one of the adsorption layer or the silicon-containing film formed on an upper portion of the pattern formed on the substrate is modified.
11. The substrate processing method of claim 1 , wherein, the modifying the at least one of the adsorption layer or the silicon-containing film improves an etching resistance of the silicon-containing film.
12. The substrate processing method of claim 1 , wherein the modifying the at least one of the adsorption layer or the silicon-containing film is performed after the forming the adsorption layer.
13. The substrate processing method of claim 1 , wherein the modifying the at least one of the adsorption layer or the silicon-containing film is performed after the generating the plasma of the reaction gas.
14. The substrate processing method of claim 1 , wherein the modifying the at least one of the adsorption layer or the silicon-containing film is performed after repeating the forming the adsorption layer and the generating the plasma of the reaction gas.
15. The substrate processing method of claim 1 , wherein the forming the silicon-containing film and the etching the silicon-containing film are repeated.
16. The substrate processing method of claim 1 , wherein the silicon-containing film is a SiN film.
17. The substrate processing method of claim 1 , wherein the silicon-containing gas includes at least one selected from the group consisting of a halogen-containing silicon-based gas, an aminosilane gas, a SiH 4 gas, and a trisilylamine (TSA) gas.