Engineered electro-optic devices
A system includes a classical computing system and one or more quantum computing chips coupled to the classical computing system. The one or more quantum computing chips includes one or more electro-optic devices. Each electro-optic device includes a substrate, a waveguide disposed on top of the substrate, and a layer stack disposed on top of the waveguide and including a plurality of electro-optic material layers interleaved with a plurality of interlayers. Each electro-optic device further comprising a waveguide core disposed on top of a portion of the layer stack. The plurality of interlayers are characterized by a first lattice structure and the plurality of electro-optic material layers are under tensile stress and are characterized by a second lattice structure and crystallographic phase.
1. A system comprising:
a classical computing system; and
one or more quantum computing chips coupled to the classical computing system, wherein the one or more quantum computing chips includes one or more electro-optic devices, each electro-optic device of the one or more electro-optic devices comprising:
a substrate;
a buffer layer coupled to the substrate and configured to at least partially relieve stress of a plurality of electro-optic material layers;
a waveguide disposed above the substrate;
a layer stack disposed on top of the waveguide and including the plurality of electro-optic material layers under tensile stress and characterized by a first lattice structure and crystallographic phase, wherein the electro-optic material layers are interleaved with a plurality of interlayers characterized by a second lattice structure; and
a waveguide core disposed on top of a portion of the layer stack.
2. The system of claim 1 , wherein the plurality of interlayers maintains the second lattice structure at a room temperature and at a cryogenic temperature, and wherein the plurality of electro-optic material layers are under tensile stress and maintain the first lattice structure and the crystallographic phase at the room temperature and the cryogenic temperature.
3. The system of claim 1 , further comprising at least one electronic component.
4. The system of claim 3 , wherein the at least one electronic component includes at least one of a pulsed pump laser or a microwave oscillator.
5. The system of claim 1 , wherein the one or more quantum computing chips each includes at least one of a hybrid electronic chip or an integrated photonics chip.
6. The system of claim 1 , further comprising a user device communicatively coupled to at least one of the classical computing system or the one or more quantum computing chips.
7. The system of claim 1 , further comprising networking hardware coupled to the one or more quantum computing chips.
8. The system of claim 1 , wherein the second lattice structure includes a tetragonal crystal structure.
9. The system of claim 1 , further comprising a cryostat, wherein the one or more quantum computing chips are housed within the cryostat and the cryostat is configured to operate between about 340° K and 4° K.
10. The system of claim 1 , wherein the plurality of electro-optic material layers includes at least one of BaTiO 3 , (Ba,Sr)TiO 3 , Pb(Zr,Ti)O 3 , or (Pb,La)(Zr,Ti)O 3 .
11. The system of claim 1 , wherein the plurality of interlayers includes at least one of MgO, (Ba,Sr)TiO 3 , BaHfO 3 , BaZrO 3 , SrHfO 3 , SrZrO 3 , or SrNbO 3 .
12. A method of operating a hybrid quantum computing system, the method comprising:
providing a classical computing system;
providing one or more quantum computing chips coupled to the classical computing system, wherein the one or more quantum computing chips includes one or more electro-optic devices, each electro-optic device of the one or more electro-optic devices comprising:
a substrate;
a buffer layer coupled to the substrate and configured to at least partially relieve stress of a plurality of electro-optic material layers;
a waveguide disposed above the substrate;
a layer stack disposed on top of the waveguide and including the plurality of electro-optic material layers under tensile stress and characterized by a first lattice structure and crystallographic phase, wherein the electro-optic material layers are interleaved with a plurality of interlayers characterized by a second lattice structure; and
a waveguide core disposed on top of a portion of the layer stack;
performing one or more quantum computing processes using the one or more quantum computing chips.
13. The method of claim 12 , further comprising:
providing a cryostat; and
housing the one or more quantum computing chips in the cryostat.
14. The method of claim 12 , further comprising reducing a temperature of the one or more quantum computing chips to about 4° K.
15. The method of claim 14 , wherein reducing the temperature of the one or more quantum computing chips occurs prior to performing the one or more quantum computing processes using the one or more quantum computing chips.
16. The method of claim 12 , further comprising increasing a temperature of the one or more quantum computing chips to about 340° K.
17. The method of claim 12 , wherein the plurality of interlayers maintains the second lattice structure at a room temperature and at a cryogenic temperature, and wherein the plurality of electro-optic material layers are under tensile stress and maintain the first lattice structure and the crystallographic phase at the room temperature and the cryogenic temperature.
18. The method of claim 12 , further comprising providing a user device communicatively coupled to at least one of the classical computing system or the one or more quantum computing chips.
19. The method of claim 12 , further comprising providing networking hardware coupled to the one or more quantum computing chips.
20. The method of claim 19 , wherein the networking hardware is coupled to the one or more quantum computing chips via optical interconnects.