IP Library Granted Patent US 12,322,436
Granted Patent B2
US 12,322,436 · App. 18/178,531 · Granted Jun 3, 2025

Memory package and a memory module including the memory package

Inventor: Won Ha Choi (Gyeonggi-do, KR)
Assignee: SK hynix Inc.
G11C11/4093H01L23/49H01L23/5226H01L24/14H01L25/16H01L2224/145H01L2924/1436
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Quick Facts
Patent No.
US 12,322,436
App. No.
18/178,531
Granted
Jun 3, 2025
Kind
B2
Abstract

A single memory package includes a package substrate; at least one of a memory chip and a buffer chip mounted on the package substrate; M×N number of interface data channel buses between the memory chip and the buffer chip; and (M×N)/2 n number of outer data channel buses connected to the buffer chip. The buffer chip receives data from the memory chip through the interface data channel buses, and provides the data through the outer data channel buses. The M, N, and n are natural numbers.

Claims (56)

1. A single memory package comprising:

a package substrate;

a first memory core chip, a second memory core chip, a first memory logic chip, a second memory logic chip, and a buffer chip mounted on the package substrate;

a plurality of first memory data channel buses between the first memory core chip and the first memory logic chip;

a plurality of second memory data channel buses between the second memory core chip and second memory logic chip;

a plurality of first interface data channel buses between the first memory logic chip and the buffer chip;

a plurality of second interface data channel buses between the second memory core chip and the buffer chip; and

a plurality of outer data channel buses connected to the buffer chip,

wherein:

the first memory core chip includes a first memory cell region,

the second memory core chips includes a second memory cell region,

the first memory logic chip includes a first peripheral circuit region,

the second memory logic chip includes a second peripheral circuit region,

wherein the buffer chip receives data from the first and second memory logic chips through the first and second interface data channel buses, and provides the data to an external device through the outer data channel buses, and

wherein the first memory data channel buses, the second memory data channel buses, the first interface data channel buses, the second interface data channel buses, and the outer data channel buses have a same number.

2. The single memory package of claim 1 , wherein each of the first and second interface data channel buses further comprise at least two pseudo channel buses.

3. The single memory package of claim 2 , wherein the buffer chip is configured to provide a seed signal to the pseudo channel buses to perform a random scrambling operation.

4. The single memory package of claim 1 , wherein:

the package substrate comprises one of a printed circuit board or a redistribution layer, and

each of the first memory core chip, the first memory logic chip, the second memory core chip, the second memory logic chip, and the buffer chip are individually packaged.

5. The single memory package of claim 4 , wherein each of the first memory core chip, the first memory logic chip, the second memory core chip, the second memory logic chip, and the buffer chip are electrically connected to the package substrate through bonding wires.

6. The single memory package of claim 1 , wherein:

the package substrate comprises one of a printed circuit board or a redistribution layer, and

at least one of the first memory core chip, the first memory logic chip, the second memory core chip, the second memory logic chip, and the buffer chip is a chiplet in a wafer level.

7. The single memory package of claim 6 , wherein:

the buffer chip, the first and second memory logic chips, and the first and second memory core chips are vertically stacked, and

the package substrate, the buffer chip, the first memory logic chip and the first memory core chip, and the second memory logic chip and the second memory core chip are electrically connected to each other through bumps.

8. The single memory package of claim 7 , wherein:

the bumps comprise copper pads, and

the buffer chip, the first memory logic chip and the first memory core chip, and the second memory logic chip and the second memory core chip are bonded in a hybrid bonding structure.

9. The single memory package of claim 8 , further comprising through-vias vertically passing through the buffer chip.

10. The single memory package of claim 1 , wherein the first and second memory logic chips, and the buffer chip are integrated into one package.

11. The single memory package of claim 1 , wherein the first and second memory logic chips are stacked on the buffer chip, and the first and second memory core chips are stacked on the first and second memory logic chips, respectively.

12. A single memory package comprising:

a package substrate;

at least one memory chip and a buffer chip mounted on the package substrate;

M×N number of interface data channel buses between the memory chip and the buffer chip; and

(M×N)/2n number of outer data channel buses connected to the buffer chip,

wherein the buffer chip receives data from the memory chip through the interface data channel buses, and provides the data through the outer data channel buses, wherein the M, N, and n are natural numbers,

wherein:

the M is a number of sets of the interface data channel buses, and

the N is a number of the interface data channel buses in each of the sets,

wherein the buffer chip is configured to receive the M×N number of the data from the memory chip and alternately output each set of data, and

wherein the buffer chip is configured to receive 2N number of the data on an A set of the N number of the interface data channel buses and a B set of the N number of the interface channel buses from the memory chip and alternately output the data in the following order:

[A_0/B_0/A_1/B_1/A_2/B_2/ . . . /A_N/B_N].

13. A single memory package comprising:

a package substrate;

a first memory chip, a second memory chip, and a buffer chip mounted on the package substrate;

a first set of N number of interface data channel buses between the first memory chip and the buffer chip, wherein the first memory chip and the buffer chip communicate with each other through the first set of the N number of interface data channel buses;

a second set of the N number of the interface data channel buses between the second memory chip and the buffer chip, wherein the second memory chip and the buffer chip communicate with other through the second set of the N number of the interface data channel buses; and

an N number of outer data channel buses connected to the buffer chip, wherein the buffer chip communicates with an external device through the N number of the outer data channel buses,

wherein the buffer chip is configured to receive data from the first and second memory chips and output the data to the external device by operating in selected one mode of a chain data processing mode, an alternating data processing mode, a random scrambling data processing mode, an encoding data processing mode, and XOR data processing mode, wherein the N is a natural number.

14. The single memory package of claim 13 , wherein:

the buffer chip includes multiplexers and a data scattering circuit,

the multiplexers are configured to operate according to a clock signal provided to a clock distribution counter, and

the data scattering circuit is configured to operate in the modes selected according to a mode selection signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2023
From: CHOI, WON HA
To: SK HYNIX INC.
Reel/Frame 062956/0241 →
Priority Claims (1)
KR 10-2022-0129714 · Oct 11, 2022 · national
Continuity (1)
Related Publication 20240119996A1 · Apr 11, 2024
References Cited (5)
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