Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
There is provided a technique that includes forming a film in a concave portion provided on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion; (b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and (c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying a first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate.
1. A method of processing a substrate, comprising:
forming a film in a concave portion provided on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including:
(a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion;
(b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and
(c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying a first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate,
wherein both the adsorption inhibitor and the precursor contain a main element constituting the film and a halogen element.
2. The method of claim 1 , wherein a thickness of the first layer is made thicker than a thickness of the adsorption inhibition layer.
3. The method of claim 1 , wherein a thickness of the second layer formed by modifying the first layer is made thicker than a thickness of the second layer formed by modifying the adsorption inhibition layer.
4. The method of claim 1 , wherein the second layer formed by modifying the first layer and the second layer formed by modifying the adsorption inhibition layer have the same components.
5. The method of claim 1 , wherein both the adsorption inhibitor and the precursor contain at least one selected from the group of chlorine, fluorine, bromine, and iodine.
6. The method of claim 1 , wherein each of the adsorption inhibitor and the precursor is halosilane.
7. The method of claim 1 , wherein each of the adsorption inhibitor and the precursor is chlorosilane.
8. The method of claim 1 , wherein a thermal decomposition temperature of the adsorption inhibitor is higher than a thermal decomposition temperature of the precursor.
9. The method of claim 1 , wherein a decomposition rate of the adsorption inhibitor in (a) is made lower than a decomposition rate of the precursor in (b).
10. The method of claim 1 , wherein a ratio of a surface reaction to a gas phase reaction in (a) is made higher than a ratio of a surface reaction to a gas phase reaction in (b).
11. The method of claim 1 , wherein a supply time of the adsorption inhibitor is made equal to or less than a supply time of the precursor.
12. The method of claim 1 , wherein a supply time of the adsorption inhibitor is made equal to or less than a supply time of the precursor, and the supply time of the precursor is made less than a supply time of the first reactant.
13. The method of claim 1 , wherein the adsorption inhibition layer contains a partial structure in which three halogens are bonded to an atom of the main element.
14. The method of claim 1 , wherein the adsorption inhibitor is a compound represented by SiX 3 R (where each of the three Xs independently denotes Cl, F, Br, or I and R denotes Cl, F, Br, I, an alkyl group, or an amino group).
15. The method of claim 1 , wherein the first reactant is at least one selected from the group of a nitrogen- and hydrogen-containing gas, a carbon- and nitrogen-containing gas, a carbon- and hydrogen-containing gas, an oxygen-containing gas, and a boron-containing gas.
16. The method of claim 1 , wherein the cycle further includes performing (d) modifying the second layer into a third layer by supplying a second reactant, which is different from the first reactant in a molecular structure, to the substrate, non-simultaneously with each of (a), (b), and (c).
17. The method of claim 16 , wherein each of the first reactant and the second reactant is at least one selected from the group of a nitrogen- and hydrogen-containing gas, a carbon- and nitrogen-containing gas, a carbon- and hydrogen-containing gas, an oxygen-containing gas, and a boron-containing gas.
18. A method of manufacturing a semiconductor device, comprising:
forming a film in a concave portion provided on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including:
(a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion;
(b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and
(c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying a first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate,
wherein both the adsorption inhibitor and the precursor contain a main element constituting the film and a halogen element.
19. A substrate processing apparatus, comprising:
a precursor supply system configured to supply a precursor to a substrate;
an adsorption inhibitor supply system configured to supply an adsorption inhibitor to the substrate;
a first reactant supply system configured to supply a first reactant to the substrate; and
a controller configured to be capable of controlling the precursor supply system, the adsorption inhibitor supply system, and the first reactant supply system so as to perform:
forming a film in a concave portion provided on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including:
(a) forming an adsorption inhibition layer by supplying the adsorption inhibitor, which inhibits adsorption of the precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion;
(b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and
(c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying the first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate,
wherein both the adsorption inhibitor and the precursor contain a main element constituting the film and a halogen element.
20. A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
forming a film in a concave portion provided on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including:
(a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion;
(b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and
(c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying a first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate,
wherein both the adsorption inhibitor and the precursor contain a main element constituting the film and a halogen element.