IP Library › Granted Patent US 12,345,762
Granted Patent B2
US 12,345,762 · App. 18/318,464 · Granted Jul 1, 2025

Built-in self-test circuit and temperature measurement circuit including the same

Inventors: Junhee Shin (Yongin-Si, KR); Jooseong Kim (Seoul, KR); Yongjin Lee (Goyang-si, KR); Michael Choi (Seoul, KR); Kwangho Kim (Yongin-si, KR); Sangho Kim (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
G01R31/31724G01R31/2874G01R31/3004G01R31/3167G01R31/31924G01R31/3274H03K19/01721
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Quick Facts
Patent No.
US 12,345,762
App. No.
18/318,464
Granted
Jul 1, 2025
Kind
B2
Abstract

A temperature measurement circuit includes a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature, a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage, a sensing circuit configured to generate a temperature-variant voltage based on a bias current, where the temperature-variant voltage is varied depending on the operation temperature, an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage, and an analog built-in self-test (BIST) circuit configured to generate a plurality of flag signals indicating whether each of the band-gap reference voltage, the measurement reference voltage, and a bias voltage corresponding to the bias current is included in a predetermined range.

Claims (86)

1. A temperature measurement circuit comprising:

a band-gap reference circuit configured to generate a band-gap reference voltage that is fixed regardless of an operation temperature;

a reference voltage generator circuit configured to generate a measurement reference voltage by adjusting the band-gap reference voltage;

a sensing circuit configured to generate a temperature-variant voltage based on a bias current, wherein the temperature-variant voltage varies depending on the operation temperature;

an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage; and

a digital built-in self-test (BIST) circuit configured to

apply a test signal to the analog-digital converter circuit,

receive a second digital code from the analog-digital converter circuit, and

generate a plurality of alarm signals based on the second digital code, wherein the plurality of alarm signals indicate an operation state of the analog-digital converter circuit.

2. The temperature measurement circuit of claim 1 , wherein the digital BIST circuit comprises:

a test signal generator circuit configured to generate a ramp voltage having a voltage level sequentially increasing or sequentially decreasing and to apply the ramp voltage as the test signal to the analog-digital converter circuit.

3. The temperature measurement circuit of claim 2 , wherein the digital BIST circuit is configured to generate at least one of a monotony alarm signal or a linearity alarm signal based on a plurality of values of the second digital code,

wherein the monotony alarm signal indicates whether the second digital code increases or decreases monotonously, and

wherein the linearity alarm signal indicates whether the second digital code varies uniformly.

4. The temperature measurement circuit of claim 1 , wherein the test signal has a voltage level corresponding to a center value of the second digital code, and

wherein the digital BIST circuit is configured to apply the test signal to the analog-digital converter circuit to generate an offset alarm signal indicating whether a difference between a measured value of the second digital code and the center value of the second digital code is greater than a reference value.

5. The temperature measurement circuit of claim 1 , wherein the test signal has a higher voltage level than a voltage level corresponding to a maximum value of the second digital code, and

wherein the digital BIST circuit is configured to apply the test signal to the analog-digital converter circuit to generate a stuck alarm signal indicating whether a first measured value of the second digital code is equal to the maximum value of the second digital code.

6. The temperature measurement circuit of claim 1 , wherein the digital BIST circuit comprises:

a pull-up resistor connected to a power supply voltage;

a pull-up switch configured to control an electric connection between the pull-up resistor and an output node of the second digital code;

a pull-down resistor connected to a ground voltage; and

a pull-down switch configured to control an electric connection between the pull-down resistor and the output node of the second digital code.

7. The temperature measurement circuit of claim 6 , wherein the digital BIST circuit is configured to

apply a first test signal having a higher voltage level than a voltage level corresponding to a maximum value of the second digital code to the analog-digital converter circuit when the pull-down switch is turned on,

apply a second test signal having a lower voltage level than a voltage level corresponding to a minimum value of the second digital code to the analog-digital converter circuit when the pull-up switch is turned on, and

generate a floating alarm signal indicating at least one of whether a first measured value of the second digital code is equal to the maximum value of the second digital code or whether a second measured value of the second digital code is equal to the minimum value of the second digital code.

8. The temperature measurement circuit of claim 1 , wherein the analog-digital converter circuit comprises:

a scan voltage generator circuit configured to generate a plurality of scan voltages having different voltage levels based on the measurement reference voltage and output the plurality of scan voltages one by one according to a unit scan time;

a comparator circuit configured to generate a plurality of comparison result values by comparing the temperature-variant voltage with the plurality of scan voltages;

a converter circuit configured to generate the second digital code based on the plurality of comparison result values; and

a controller circuit configured to control the scan voltage generator circuit, the comparator circuit, and the converter circuit.

9. The temperature measurement circuit of claim 8 , wherein the digital BIST circuit is configured to

change the unit scan time between a first unit scan time and a second unit scan time longer than the first scan unit time, and

generate a fluctuation alarm signal indicating whether a first measured value of the second digital code corresponding to the first unit scan time is equal to a second measured value of the second digital code corresponding to the second unit scan time.

10. The temperature measurement circuit of claim 8 , wherein the digital BIST circuit comprises a counter configured to monitor operation timings of the analog-digital converter circuit, and wherein the digital BIST circuit is configured to generate at least one of a settling alarm signal or a conversion alarm signal using the counter,

wherein the settling alarm signal indicates whether a total scan time for outputting the plurality of scan voltages from the scan voltage generator circuit is shorter than a first reference time, and

wherein the conversion alarm signal indicates whether a conversion time for generating the second digital code by the converter circuit is shorter than a second reference time.

11. The temperature measurement circuit of claim 1 , comprising:

a main sensing unit disposed at a main position and configured to generate a main sensing voltage that varies depending on a main operation temperature at the main position; and

a plurality of local sensing units disposed at a plurality of local positions and configured to generate a plurality of local sensing voltages that vary depending on local operation temperatures at the plurality of local positions.

12. The temperature measurement circuit of claim 11 , wherein the digital BIST circuit is configured to

receive a first measured value of the second digital code corresponding to the main sensing voltage and a second measured value of the second digital code corresponding to a local sensing voltage provided from a local sensing unit nearest to the main sensing unit among the plurality of local sensing units, and

generate a probe-check alarm signal indicating whether a difference between the first measured value and the second measured value is smaller than a reference value.

13. The temperature measurement circuit of claim 1 , further comprising:

an analog BIST circuit configured to generate

a first flag signal indicating whether the band-gap reference voltage is within a first predetermined range,

a second flag signal indicating whether the measurement reference voltage is within a second predetermined range, and

a third flag signal indicating whether a bias voltage corresponding to the bias current is within a third predetermined range.

14. The temperature measurement circuit of claim 13 , wherein the analog BIST circuit comprises:

a power supply voltage divider circuit configured to generate a power division voltage corresponding to a lowest limit level of the band-gap reference voltage by dividing a power supply voltage; and

a comparator circuit configured to

compare the band-gap reference voltage to the power division voltage, and

activate the first flag signal in response to the band-gap reference voltage being lower than the lowest limit level of the band-gap reference voltage.

15. The temperature measurement circuit of claim 13 , wherein the analog BIST circuit comprises:

a band-gap reference voltage divider circuit configured to generate a first band-gap division voltage corresponding a highest limit level of the measurement reference voltage and a second band-gap division voltage corresponding to a lowest limit level of the measurement reference voltage by dividing the band-gap reference voltage;

a measurement reference voltage divider circuit configured to generate a measurement division voltage by dividing the measurement reference voltage; and

a comparator circuit configured to

compare the measurement division voltage to the first band-gap division voltage and the second band-gap division voltage, and

activate the second flag signal in response to the measurement reference voltage being higher than the highest limit level of the measurement reference voltage or lower than the lowest limit level of the measurement reference voltage.

16. The temperature measurement circuit of claim 13 , wherein the analog BIST circuit comprises:

a measurement reference voltage divider circuit configured to generate a first measurement reference division voltage corresponding to a highest limit level of the bias voltage and a second measurement reference division voltage corresponding to a lowest limit level of the bias voltage by dividing the measurement reference voltage;

a current-voltage converter circuit configured to generate the bias voltage based on the bias current; and

a comparator circuit configured to

compare the bias voltage with the first measurement reference division voltage and the second measurement reference division voltage, and

activate the third flag signal in response to the bias voltage being higher than the highest limit level of the bias voltage or lower than the lowest limit level of the bias voltage.

17. The temperature measurement circuit of claim 16 , wherein the sensing circuit comprises a first current source configured to generate the bias current and the current-voltage converter circuit comprises a second current source configured to generate the bias current such that the first current source and the second current source form a current mirror.

18. The temperature measurement circuit of claim 13 , wherein the analog BIST circuit comprises:

a band-gap reference voltage monitor circuit configured to activate the first flag signal based on the band-gap reference voltage and a power supply voltage in response to the band-gap reference voltage deviating from the first predetermined range;

a measurement reference voltage monitor circuit configured activate the second flag signal based on the measurement reference voltage and the band-gap reference voltage in response to the measurement reference voltage deviating from the second predetermined range; and

a bias voltage monitor circuit configured to activate the third flag signal based on the bias voltage and the measurement reference voltage in response to the bias voltage deviating from the third predetermined range.

19. A temperature measurement circuit comprising:

a temperature detection circuit comprising:

an analog circuit configured to generate a measurement reference voltage that is fixed regardless of an operation temperature and a temperature-variant voltage that varies depending on the operation temperature; and

an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage; and

a digital built-in self-test (BIST) circuit configured to

apply a test signal to the analog-digital converter circuit,

receive a second digital code from the analog-digital converter circuit, and

generate a plurality of alarm signals based on the second digital code, wherein the plurality of alarm signals indicate an operation state of the analog-digital converter circuit.

20. A temperature measurement circuit comprising:

an analog circuit configured to generate a measurement reference voltage that is fixed regardless of an operation temperature and a temperature-variant voltage that varies depending on the operation temperature;

an analog-digital converter circuit configured to generate a first digital code indicating the operation temperature based on the measurement reference voltage and the temperature-variant voltage in a normal mode and generate a second digital code based on a test signal in a test mode;

an analog built-in self-test (BIST) circuit configured to generate, for each of a plurality of monitoring voltages of the analog circuit, a respective flag signal indicating whether the monitoring voltage is within a respective predetermined range; and

a digital BIST circuit configured to

apply the test signal to the analog-digital converter circuit in the test mode, and

based on the second digital code, generate an alarm signal indicating an operation state of the analog-digital converter circuit.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 17, 2023
From: SHIN, JUNHEE; KIM, JOOSEONG; LEE, YONGJIN; CHOI, MICHAEL; KIM, KWANGHO; KIM, SANGHO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 063670/0502 →
Priority Claims (1)
KR 10-2019-0175903 · Dec 27, 2019 · national
Continuity (2)
Continuation 16940809 · Jul 28, 2020
Related Publication 20230280398A1 · Sep 7, 2023
References Cited (27)
US 7618186B2 · Kwon et al. · 2009 [cited by applicant]
US 7978556B2 · Macerola et al. · 2011 [cited by applicant]
US 9541456B2 · Matsumoto et al. · 2017 [cited by applicant]
US 10001416B2 · Cho et al. · 2018 [cited by applicant]
US 10209145B2 · You et al. · 2019 [cited by applicant]
US 10642305B2 · Lee et al. · 2020 [cited by applicant]
US 20080186044A1 · Singh · 2008 [cited by applicant]
US 20130073240A1 · Kameyama et al. · 2013 [cited by applicant]
US 20130336360A1 · Pauritsch et al. · 2013 [cited by applicant]
US 20170023966A1 · Kim et al. · 2017 [cited by applicant]
US 20170357829A1 · Park · 2017 [cited by examiner]
US 20180156675A1 · Kumahara · 2018 [cited by examiner]
US 20190044528A1 · Lu et al. · 2019 [cited by applicant]
US 20190155323A1 · Kim et al. · 2019 [cited by applicant]
US 20190178938A1 · Jin et al. · 2019 [cited by applicant]
US 20210088389A1 · Ma · 2021 [cited by examiner]
CN 110243485A · 2019 [cited by applicant]
DE 102004055039A1 · 2006 [cited by applicant]
JP 1994031343 · 1994 [cited by applicant]
JP 2006003198 · 2006 [cited by applicant]
JP 4573096 · 2010 [cited by applicant]
KR 1020040001638 · 2004 [cited by applicant]
KR 1020070108792A · 2007 [cited by applicant]
KR 1020150027414A · 2015 [cited by applicant]
KR 1020160119754A · 2016 [cited by applicant]
Office Action in Chinese Appln. No. 202011054017.7, mailed on Nov. 30, 2024, 12 pages (with English translation). [cited by applicant]
Notice of Allowance in Korean Appln. No. 10-2019-0175903, mailed on Mar. 18, 2025, 18 pages (with Machine Translation). [cited by applicant]