Memory device including plurality of overlap memory cell arrays with folded bit-lines
A novel memory device is provided. A first cell array including a plurality of memory cells and a second cell array including a plurality of memory cells are provided to overlap with each other. Two bit lines included in the first bit line pair are electrically connected to part of the memory cells included in the first cell array and to part of the memory cells included in the second cell array. Two bit lines included in the second bit line pair are electrically connected to part of the memory cells included in the first cell array and to part of the memory cells included in the second cell array. In the first cell array, one of the bit lines included in the second bit line pair includes a region overlapping with part of the first bit line pair. In the second cell array, the other of the bit lines included in the second bit line pair includes a region overlapping with part of the first bit line pair.
1. A memory device comprising:
a first sense amplifier;
a second sense amplifier being adjacent to the first sense amplifier;
a first cell array comprising a plurality of first memory cells, the first cell array provided over the first sense amplifier and the second sense amplifier;
a second cell array comprising a plurality of second memory cells, the second cell array provided over the first cell array;
a first bit line and a second bit line each electrically connected to the first sense amplifier; and
a third bit line and a fourth bit line each electrically connected to the second sense amplifier,
wherein a region of the first cell array and a region of the second cell array overlap with each other,
wherein the region of the first cell array comprises:
a first group;
a second group being adjacent to the first group;
a third group being adjacent to the second group;
a fourth group being adjacent to the second group and the third group;
a fifth group being adjacent to the fourth group; and
a sixth group being adjacent to the fifth group,
wherein each of the first to sixth groups includes one or more first memory cells,
wherein the region of the second cell array comprises:
a seventh group;
an eighth group being adjacent to the seventh group;
a ninth group being adjacent to the eighth group;
a tenth group being adjacent to eighth group and the ninth group;
an eleventh group being adjacent to the tenth group; and
a twelfth group being adjacent to the eleventh group,
wherein each of the seventh to twelfth groups includes one or more second memory cells,
wherein the first bit line includes a first part electrically connected to the first group, a second part electrically connected to the third group, and a third part electrically connected to the ninth group,
wherein the second bit line includes a first part electrically connected to the second group, a second part electrically connected to the seventh group, and a third part electrically connected to the eighth group,
wherein the third bit line includes a first part electrically connected to the fourth group, a second part electrically connected to the sixth group, and a third part electrically connected to the twelfth group,
wherein the fourth bit line includes a first part electrically connected to the fifth group, a second part electrically connected to the tenth group, and a third part electrically connected to the eleventh group, and
wherein the first part of the third bit line is adjacent to the second part of the first bit line and the first part of the second bit line.
2. The memory device according to claim 1 ,
wherein the fourth group includes two or more first memory cells, and
wherein the tenth group includes two or more second memory cells.
3. The memory device according to claim 1 ,
wherein the first memory cells each comprise a first transistor and a first capacitor, and
wherein the second memory cells each comprise a second transistor and a second capacitor.
4. The memory device according to claim 3 ,
wherein the first transistor and the second transistor each comprise an oxide semiconductor in a semiconductor layer.
5. A memory device comprising:
a first sense amplifier;
a second sense amplifier being adjacent to the first sense amplifier;
a first cell array comprising a plurality of first memory cells, the first cell array provided over the first sense amplifier and the second sense amplifier;
a second cell array comprising a plurality of second memory cells, the second cell array provided over the first cell array;
a first bit line and a second bit line each electrically connected to the first sense amplifier; and
a third bit line and a fourth bit line each electrically connected to the second sense amplifier,
wherein a region of the first cell array and a region of the second cell array overlap with each other,
wherein the region of the first cell array comprises:
a first group;
a second group being adjacent to the first group;
a third group being adjacent to the second group;
a fourth group being adjacent to the third group;
a fifth group being adjacent to the fourth group; and
a sixth group being adjacent to the fifth group,
wherein each of the first to sixth groups includes one or more first memory cells,
wherein the region of the second cell array comprises:
a seventh group;
an eighth group being adjacent to the seventh group;
a ninth group being adjacent to the eighth group;
a tenth group being adjacent to the ninth group;
an eleventh group being adjacent to the tenth group; and
a twelfth group being adjacent to the eleventh group,
wherein each of the seventh to twelfth groups includes one or more second memory cells,
wherein the first bit line is electrically connected to the first group, the third group, and the ninth group,
wherein the second bit line is electrically connected to the second group, the seventh group, and the eighth group,
wherein the third bit line is electrically connected to the fourth group, the sixth group, and the twelfth group,
wherein the fourth bit line is electrically connected to the fifth group, the tenth group, and the eleventh group,
wherein a first part of the fourth group is adjacent to the second group,
wherein a second part of the fourth group is adjacent to the third group,
wherein a first part of the tenth group is adjacent to the eighth group, and
wherein a second part of the tenth group is adjacent to the ninth group.
6. The memory device according to claim 5 ,
wherein the fourth group includes two or more first memory cells, and
wherein the tenth group includes two or more second memory cells.
7. The memory device according to claim 5 ,
wherein the first memory cells each comprise a first transistor and a first capacitor, and
wherein the second memory cells each comprise a second transistor and a second capacitor.
8. The memory device according to claim 7 ,
wherein the first transistor and the second transistor each comprise an oxide semiconductor in a semiconductor layer.