IP Library › Granted Patent US 12,347,583
Granted Patent B2
US 12,347,583 · App. 17/294,654 · Granted Jul 1, 2025

Display device and electronic device

Inventors: Akira Watanabe (Kanagawa, JP); Yoshifumi Zaizen (Kanagawa, JP)
Assignees: Sony Group Corporation; Sony Semiconductor Solutions Corporation
H01B1/02H10K50/818H10K50/852H10K59/121H10K59/876H10K59/80518H10K59/80524
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Quick Facts
Patent No.
US 12,347,583
App. No.
17/294,654
Granted
Jul 1, 2025
Kind
B2
Abstract

A display device includes a plurality of first electrodes each provided for each pixel, an insulating layer containing a silicon compound, provided between the first electrodes, and covering a peripheral edge portion of the first electrode, a first interface layer containing a first silicon oxide and provided at an interface between the first electrode and the insulating layer, an organic layer including a light emitting layer, and provided on the first electrodes and the insulating layer, commonly to all of pixels, and a second electrode provided on the organic layer. The insulating layer contains a second silicon oxide on a surface portion on a side of the organic layer.

Claims (31)

1. A display device comprising:

a first electrodes provided for a pixel;

an insulating layer covering a peripheral edge portion of the first electrode, the insulating layer having a first composition including a first silicon oxide and a first silicon nitride;

a first interface layer provided at an interface between the first electrode and the insulating layer, the first interface layer having a second composition;

an organic layer including a light emitting layer, and provided on the first electrodes and the insulating layer;

a second interface layer provided at an interface between the insulating layer and the organic layer, the second interface layer having a third composition including a second silicon oxide and a second silicon nitride; and

a second electrode provided on the organic layer, wherein

a ratio of the second silicon oxide to a total amount of the second silicon oxide and the second silicon nitride is 80% or more.

2. The display device according to claim 1 , wherein the first composition continuously changes from a first portion as the insulating layer extends toward a surface on a side of the organic layer.

3. The display device according to claim 1 , wherein an average thickness of the second interface layer is 10 nm or less.

4. The display device according to claim 1 , wherein the second interface layer includes two or more layers, and at least one layer of the two or more layers contains the second silicon oxide.

5. The display device according to claim 1 , wherein the second interface layer includes a first layer containing the second silicon oxide, and a second layer containing at least one type of another silicon nitride or a silicon oxynitride and provided on the first layer.

6. The display device according to claim 1 , further comprising:

an intermediate layer containing a silicon fluoride and provided between the second interface layer and the insulating layer.

7. The display device according to claim 1 , wherein the second interface layer covers a main surface of the insulating layer and an edge of the insulating layer.

8. The display device according to claim 7 , wherein a portion of the second interface layer that covers the edge of the insulating layer, has a different composition from a portion of the second interface layer that cover the main surface of the bulk layer.

9. The display device according to claim 8 , wherein the portion of the second interface layer that covers the edge of the insulating layer is positively charged.

10. The display device according to claim 1 , wherein an average thickness of the first interface layer is less than 15 nm.

11. The display device according to claim 1 , wherein the insulating layer is positively charged.

12. The display device according to claim 1 , wherein

the insulating layer further contains hydrogen, and a peak intensity ratio (I N-H /I Si-H ) of peak intensity I N—H derived from an N—H bond and peak intensity I Si—H derived from an Si—H bond, the peak intensity ratio being obtained by analyzing the insulating layer by an X-ray photoelectron spectroscopy, is less than 4.

13. The display device according to claim 1 , wherein the first electrode includes an oxide conductive layer.

14. The display device according to claim 1 , wherein the organic layer includes a plurality of salients provided in a portions corresponding to the peripheral edge portions of the first electrodes, the portions being of a surface on a side of the second electrode, and a thickness of the organic layer in a region inside the salient is substantially constant.

15. The display device according to claim 1 ,

wherein the first electrode contains an indium oxide and a tin oxide.

16. The display device according to claim 1 , wherein

the pixel has a resonator structure that resonates light generated by a light emitting element.

17. An electronic device comprising:

the display device according to claim 1 .

18. The display device according to claim 1 , wherein the second composition differs from the first composition.

19. The display device according to claim 1 , wherein the third composition differs from the first composition.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 27, 2021
From: WATANABE, AKIRA; ZAIZEN, YOSHIFUMI
To: SONY GROUP CORPORATION; SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 057611/0941 →
Priority Claims (1)
JP 2018-222474 · Nov 28, 2018 · national
Continuity (1)
Related Publication 20220013593A1 · Jan 13, 2022
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