Semiconductor device including via structure
A semiconductor device includes a substrate. A wiring layer is over the substrate. A first via structure directly contacts a lower portion of the wiring layer. A second via structure directly contacts an upper portion of the wiring layer. The first via structure generates first stress in the wiring layer. The second via structure generates second stress in the wiring layer. The second stress is of an opposite type to the first stress. The first stress and the second stress compensate for each other in the wiring layer.
1. A semiconductor device comprising:
a substrate;
a wiring layer over the substrate;
a first via structure directly contacting a lower portion of the wiring layer, the first via structure comprises a first via metal layer and a first barrier metal layer surrounding the first via metal layer, the first barrier metal layer directly contacting an entirety of a bottom surface of the first via metal layer; and
a second via structure directly contacting an upper portion of the wiring layer, the second via structure comprises a second via metal layer and a second barrier metal layer surrounding the second via metal layer, the second barrier metal layer directly contacting an entirety of a bottom surface of the second via metal layer,
wherein the first via structure generates first stress in the wiring layer,
the second via structure generates second stress in the wiring layer, the second stress is of an opposite type to the first stress, and
the first stress and the second stress compensate for each other in the wiring layer.
2. The semiconductor device of claim 1 , wherein
the first barrier metal layer generates the first stress.
3. The semiconductor device of claim 1 , wherein
the second barrier metal layer generates the second stress.
4. The semiconductor device of claim 1 , wherein the first via structure is arranged over the substrate to be spaced apart from the second via structure in a horizontal direction.
5. The semiconductor device of claim 1 , wherein the first via structure is arranged over the substrate to overlap the second via structure in a vertical direction.
6. The semiconductor device of claim 1 , wherein:
the first via structure comprises the first barrier metal layer generating the first stress in the wiring layer, the first stress comprising tensile stress; and
the second via structure comprises the second barrier metal layer generating the second stress in the wiring layer, the second stress comprising compressive stress.
7. The semiconductor device of claim 1 , wherein:
the first via structure comprises the first barrier metal layer generating the first stress in the wiring layer, the first stress comprising compressive stress; and
the second via structure comprises the second barrier metal layer generating the second stress in the wiring layer, the second stress comprising tensile stress.
8. The semiconductor device of claim 1 , wherein:
the first via structure comprises a plurality of first sub-via structures arranged to be spaced apart from each other, and
the second via structure comprises a plurality of second sub-via structures arranged to be spaced apart from each other.
9. The semiconductor device of claim 1 , wherein:
the first barrier metal layer generates the first stress and the second barrier metal layer generates the second stress; and
one of the first stress and the second stress is in a range of about 1.0 GPa to about 2.0 GPa and the other of the first stress and the second stress is in a range of about −1.0 GPa to about −2.0 GPa.
10. The semiconductor device of claim 1 , wherein the second stress that is an opposite type to the first stress has a substantially same magnitude as the first stress.
11. A semiconductor device comprising:
a substrate;
a lower interlayer insulating layer over the substrate;
a first via structure comprising a first barrier metal layer that is arranged on an inner wall and a bottom of a first via hole, and a first via metal layer that is arranged on the first barrier metal layer to fill the first via hole, the first via hole is defined in the lower interlayer insulating layer, wherein the first barrier metal layer directly contacts an entirety of a bottom surface of the first via metal layer;
a wiring layer arranged on the lower interlayer insulating layer and the first via structure;
an upper interlayer insulating layer on the wiring layer; and
a second via structure comprising a second barrier metal layer that is arranged on an inner wall and a bottom of a second via hole, and a second via metal layer that is arranged on the second barrier metal layer to fill the second via hole, the second via hole is defined in the upper interlayer insulating layer, wherein the second barrier metal layer directly contacts an entirety of a bottom surface of the second via metal layer,
wherein the first barrier metal layer generates first stress in the wiring layer,
the second barrier metal layer generates second stress in the wiring layer, the second stress is an opposite type to the first stress, and
the first stress and the second stress compensate for each other in the wiring layer.
12. The semiconductor device of claim 11 , wherein:
an upper portion of the first via structure directly contacts a lower portion of the wiring layer; and
a lower portion of the second via structure directly contacts an upper portion of the wiring layer.
13. The semiconductor device of claim 11 , wherein:
the first barrier metal layer generates the first stress in the wiring layer, the first stress comprising tensile stress;
the second barrier metal layer generates the second stress in the wiring layer, the second stress comprising compressive stress; and
the first barrier metal layer and the second barrier metal layer respectively comprise same films.
14. The semiconductor device of claim 11 , wherein:
the first barrier metal layer generates the first stress in the wiring layer, the first stress comprising compressive stress;
the second barrier metal layer generates the second stress in the wiring layer, the second stress comprising tensile stress; and
the first barrier metal layer and the second barrier metal layer respectively comprise same films.
15. The semiconductor device of claim 11 , wherein the first via structure is arranged over the substrate to be spaced apart from the second via structure in a horizontal direction.
16. The semiconductor device of claim 11 , wherein:
the first barrier metal layer comprises a first sub-barrier metal layer that is arranged on the first via hole, and a second sub-barrier metal layer that is arranged on the first sub-barrier metal layer; and
the second barrier metal layer comprises a third sub-barrier metal layer that is arranged on the second via hole, and a fourth sub-barrier metal layer that is arranged on the third sub-barrier metal layer.
17. The semiconductor device of claim 11 , wherein:
the first via structure comprises a plurality of first sub-via structures arranged to be spaced apart from each other; and
the second via structure comprises a plurality of second sub-via structures arranged to be spaced apart from each other.
18. A semiconductor device comprising:
a substrate;
a first interlayer insulating layer over the substrate;
a first wiring layer disposed in the first interlayer insulating layer;
a second interlayer insulating layer arranged on the first interlayer insulating layer and the first wiring layer;
a first via structure comprising a first barrier metal layer that is arranged on an inner wall and a bottom of a first via hole to directly contact the first wiring layer, and a first via metal layer that is arranged on the first barrier metal layer to fill the first via hole, the first barrier metal layer directly contacts an entirety of a bottom surface of the first via metal layer, the first via hole is defined in the second interlayer insulating layer to expose the first wiring layer;
a second wiring layer arranged on the second interlayer insulating layer and the first via structure and directly contacting the first via structure;
a third interlayer insulating layer on the second wiring layer;
a second via structure comprising a second barrier metal layer that is arranged on an inner wall and a bottom of a second via hole to directly contact the second wiring layer, and a second via metal layer that is arranged on the second barrier metal layer to fill the second via hole, the second barrier metal layer directly contacts an entirety of a bottom surface of the second via metal layer, the second via hole is defined in the third interlayer insulating layer to expose the second wiring layer; and
a third wiring layer arranged on the third interlayer insulating layer and the second via structure and directly contacting the second via structure,
wherein the first barrier metal layer generates first stress in the second wiring layer,
the second barrier metal layer generates second stress in the second wiring layer, the second stress is of an opposite type to the first stress, and
the first stress and the second stress compensate for each other in the second wiring layer.
19. The semiconductor device of claim 18 , wherein:
the first wiring layer is arranged over the substrate to extend in a second direction that is parallel to an upper surface of the substrate;
the second wiring layer is arranged over the substrate to extend in a first direction that is perpendicular to the second direction and parallel to an upper surface of the substrate; and
the third wiring layer is arranged over the substrate to extend in the second direction.
20. The semiconductor device of claim 19 , wherein the first via structure is arranged over the substrate to be horizontally spaced apart from the second via structure in the first direction or the second direction.
21. The semiconductor device of claim 18 , wherein:
the first barrier metal layer generates the first stress in the second wiring layer, the first stress comprising tensile stress;
the second barrier metal layer generates the second stress in the second wiring layer, the second stress comprising compressive stress; and
the first barrier metal layer and the second barrier metal layer respectively comprise same films.
22. The semiconductor device of claim 18 , wherein:
the first barrier metal layer generates the first stress in the second wiring layer, the first stress comprising compressive stress;
the second barrier metal layer generates the second stress in the second wiring layer, the second stress comprising tensile stress; and
the first barrier metal layer and the second barrier metal layer respectively comprise same films.