Substrate processing method and substrate processing apparatus
The substrate processing method includes a liquid film forming step of forming a liquid film of a sulfuric acid-containing liquid on a principal surface of a substrate, an ozone-containing gas exposing step of filling an ozone-containing gas inside a processing chamber capable of housing the substrate to expose the liquid film to the ozone-containing gas, and a substrate heating step of heating the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas and the liquid film is also formed on the principal surface of the substrate.
1. A substrate processing method comprising:
carrying-in a substrate into a processing chamber capable of housing the substrate, the substrate having a principal surface on which an organic film is formed,
forming a liquid film of a sulfuric acid-containing liquid on the principal surface of the substrate;
ozone-containing gas exposing including filling an ozone-containing gas inside the processing chamber so as to expose the liquid film to the ozone-containing gas such that ozone in the ozone-containing gas is dissolved into the sulfuric acid-containing liquid constituting the liquid film on the principal surface of the substrate to form peroxydisulfuric acid in the liquid film, and
substrate heating to heat the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas, so that the liquid film is formed on the principal surface of the substrate, and so that the peroxydisulfuric acid is formed in the liquid film.
2. The substrate processing method according to claim 1 , wherein the substrate heating is started before the liquid film forming and before the ozone-containing gas exposing.
3. The substrate processing method according to claim 1 , wherein the ozone-containing gas exposing includes a pressure applying/supplying to supply the ozone-containing gas to the processing chamber so that a pressure inside the processing chamber is made higher than a pressure outside the processing chamber.
4. The substrate processing method according to claim 1 , further comprising a rinse liquid supplying to supply a rinse liquid to the principal surface of the substrate after the substrate heating.
5. The substrate processing method according to claim 1 , wherein the liquid film forming includes a sulfuric acid-containing liquid supplying to supply the sulfuric acid-containing liquid toward the principal surface of the substrate, and a film thinning, after the supply of the sulfuric acid-containing liquid to the principal surface of the substrate is stopped, to rotate the substrate around a central axis which passes through a central portion of the substrate so as to thin the sulfuric acid-containing liquid on the principal surface of the substrate, thereby forming the liquid film.
6. The substrate processing method according to claim 1 , wherein the ozone-containing gas exposing includes starting supply of the ozone-containing gas to the processing chamber in a state that the substrate having the liquid film formed on the principal surface thereof is disposed in the processing chamber, thereby filling the ozone-containing gas inside the processing chamber.
7. The substrate processing method according to claim 1 , further comprising a hydrophilization to hydrophilize the principal surface of the substrate before the formation of the liquid film in the liquid film forming is started.
8. The substrate processing method according to claim 7 , wherein the hydrophilization includes an ozone hydrophilization, before the formation of the liquid film in the liquid film forming is started, to supply the ozone-containing gas to the processing chamber in a state that the substrate is disposed in the processing chamber, thereby exposing the principal surface of the substrate to the ozone-containing gas.
9. The substrate processing method according to claim 1 , further comprising a substrate holding to cause a substrate holder disposed inside a chamber to hold the substrate, wherein
the ozone-containing gas exposing includes a substrate housing to move the processing chamber relatively with respect to the substrate held by the substrate holder inside the chamber so as to house the substrate held by the substrate holder inside the processing chamber, an ozone-containing gas supplying to supply the ozone-containing gas to the processing chamber in a state that the substrate is housed in the processing chamber, and a substrate detaching, after the ozone-containing gas supplying, to move the processing chamber relatively with respect to the substrate held by the substrate holder inside the chamber so as to detach the substrate held by the substrate holder from the processing chamber.