IP Library › Granted Patent US 12,362,201
Granted Patent B2
US 12,362,201 · App. 17/872,620 · Granted Jul 15, 2025

Bevel edge removal methods, tools, and systems

Inventors: Hui-Chi Huang (Zhubei, TW); Jeng-Chi Lin (Hsinchu, TW); Pin-Chuan Su (Hsinchu, TW); Chien-Ming Wang (Tainan, TW); Kei-Wei Chen (Tainan, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L21/02087A46B13/04B08B1/12B08B1/32B08B3/08B08B5/04B08B7/04A46B2200/30
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Quick Facts
Patent No.
US 12,362,201
App. No.
17/872,620
Granted
Jul 15, 2025
Kind
B2
Abstract

A tool and methods of removing films from bevel regions of wafers are disclosed. The bevel film removal tool includes an inner motor nested within an outer motor and a bevel brush secured to the outer motor. The bevel brush is adjustable radially outward to allow the wafer to be inserted in the bevel brush and to be secured to the inner motor. The bevel brush is adjustable radially inward to engage one or more sections of the bevel brush and to bring the bevel brush in contact with a bevel region of the wafer. Once engaged, a solution may be dispensed at the engaged sections of the bevel brush and the inner motor and the outer motor may be rotated such that the bevel brush is rotated against the wafer such that the bevel films of the wafer are both chemically and mechanically removed.

Claims (30)

1. A semiconductor device processing system comprising:

an inner motor comprising a top surface that is a rotatable platform, the inner motor being nested within a first motor;

a bevel brush attached to the first motor, wherein the bevel brush surrounds the top surface in a top down view, wherein the bevel brush comprises a first portion and a second portion movable relative to the first portion, wherein the first portion and the second portion are arranged in a circle in a top down view; and

a groove located within the bevel brush.

2. The semiconductor device processing system of claim 1 , wherein the bevel brush comprises nylon.

3. The semiconductor device processing system of claim 1 , wherein the first portion has a first porosity and the second portion has a second porosity different from the first porosity.

4. The semiconductor device processing system of claim 3 , wherein the first porosity is between about 0% by volume and about 70% by volume.

5. The semiconductor device processing system of claim 4 , wherein the first porosity is about 30% by volume.

6. The semiconductor device processing system of claim 1 , wherein the rotatable platform is rotatable in a first direction and the bevel brush is rotatable in both the first direction and a second direction different from the first direction.

7. A semiconductor device processing system comprising:

a first motor nested within an co-axially aligned with an outer motor, the first motor comprising a flat, circular-shaped, upper surface service as a rotatable platform;

a bevel brush attached to the outer motor, wherein the bevel brush is a circle that surrounds the rotatable platform in a top down view, wherein the circle comprises a first portion and a second portion movable relative to the first portion, the first portion and the second portion both being in a single plane of the circle, the single plane also comprising a diameter of the circle; and

a groove located within the bevel brush.

8. The semiconductor device processing system of claim 7 , wherein the bevel brush comprises nylon.

9. The semiconductor device processing system of claim 7 , wherein the first portion has a first porosity and the second portion has a second porosity different from the first porosity.

10. The semiconductor device processing system of claim 9 , wherein the first porosity is between about 0% by volume and about 70% by volume.

11. The semiconductor device processing system of claim 10 , wherein the first porosity is about 30% by volume.

12. The semiconductor device processing system of claim 7 , wherein the rotatable platform is rotatable in a first direction and the bevel brush is rotatable in both the first direction and a second direction different from the first direction.

13. A semiconductor device processing system comprising:

an inner motor nested within a first motor, the nested motor comprising a flat, circular-shaped, upper surface that is a rotatable platform;

a bevel brush attached to the first motor, wherein the bevel brush surrounds the rotatable platform in a top down view, wherein the bevel brush comprises a first portion and a second portion movable relative to the first portion;

a first groove located within the first portion of the bevel brush, the first groove extending across the first portion and the second portion; and

dispensers housed along sidewalls of the first groove.

14. The semiconductor device processing system of claim 13 , wherein the bevel brush comprises nylon.

15. The semiconductor device processing system of claim 13 , wherein the first portion has a first porosity and the second portion has a second porosity different from the first porosity.

16. The semiconductor device processing system of claim 15 , wherein the first porosity is between about 0% by volume and about 70% by volume.

17. The semiconductor device processing system of claim 16 , wherein the first porosity is about 30% by volume.

18. The semiconductor device processing system of claim 1 , wherein the bevel brush comprises a third portion and a fourth portion movable relative to the first portion, wherein the first portion, the second portion, the third portion, and the fourth portion are arranged in the circle in the top down view.

19. The semiconductor device processing system of claim 7 , wherein the groove extends across the first portion and the second portion.

20. The semiconductor device processing system of claim 13 , wherein the dispensers are housed along sidewalls of the first groove in both the first portion and the second portion.

Continuity (2)
Division 16727533 · Dec 26, 2019
Related Publication 20220359191A1 · Nov 10, 2022
References Cited (38)
US 5311634A · Andros · 1994 [cited by applicant]
US 5840129A · Saenz et al. · 1998 [cited by applicant]
US 5860178A · Nishimura · 1999 [cited by examiner]
US 5861066A · Moinpour et al. · 1999 [cited by applicant]
US 5862560A · Jensen et al. · 1999 [cited by applicant]
US 5937469A · Culkins et al. · 1999 [cited by applicant]
US 5976267A · Culkins et al. · 1999 [cited by applicant]
US 6003185A · Saenz et al. · 1999 [cited by applicant]
US 6113467A · Koike · 2000 [cited by examiner]
US 6186873B1 · Becker et al. · 2001 [cited by applicant]
US 6334229B1 · Moinpour · 2002 [cited by examiner]
US 6550091B1 · Radman · 2003 [cited by examiner]
US 6594847B1 · Krusell · 2003 [cited by examiner]
US 6910240B1 · Boyd · 2005 [cited by examiner]
US 7000622B2 · Woods · 2006 [cited by examiner]
US 7115023B1 · Owczarz · 2006 [cited by examiner]
US 7900311B2 · Yudovsky · 2011 [cited by examiner]
US 7979942B2 · Hiaoka et al. · 2011 [cited by applicant]
US 8020240B2 · Hiraoka et al. · 2011 [cited by applicant]
US 8796666B1 · Huang et al. · 2014 [cited by applicant]
US 9012132B2 · Chang · 2015 [cited by applicant]
US 9028915B2 · Chang et al. · 2015 [cited by applicant]
US 9093530B2 · Huang et al. · 2015 [cited by applicant]
US 9146469B2 · Liu et al. · 2015 [cited by applicant]
US 9213234B2 · Chang · 2015 [cited by applicant]
US 9223220B2 · Chang · 2015 [cited by applicant]
US 9256133B2 · Chang · 2016 [cited by applicant]
US 9536759B2 · Yang et al. · 2017 [cited by applicant]
US 9548303B2 · Lee et al. · 2017 [cited by applicant]
US 9711367B1 · Chien et al. · 2017 [cited by applicant]
US 10073347B1 · Zi et al. · 2018 [cited by applicant]
US 10857649B2 · Lee et al. · 2020 [cited by applicant]
US 20010044979A1 · Ravkin · 2001 [cited by examiner]
US 20070238393A1 · Shin et al. · 2007 [cited by applicant]
US 20130078810A1 · Lee · 2013 [cited by examiner]
US 20140213153A1 · Chang et al. · 2014 [cited by applicant]
US 20150224532A1 · Yang et al. · 2015 [cited by applicant]
US 20150306637A1 · Zuniga · 2015 [cited by examiner]