Semiconductor package and method of fabricating the same
A semiconductor package includes: a package substrate; a first semiconductor chip disposed on the package substrate; a heat-dissipation pattern disposed on the first semiconductor chip; a first mold layer disposed on the package substrate and at least partially surrounding the first semiconductor chip and the heat-dissipation pattern; a redistribution layer disposed on the first mold layer; a penetration electrode penetrating the first mold layer and coupled to the package substrate; and a connection pattern disposed on the penetration electrode, and connecting the redistribution layer to the penetration electrode, wherein a top surface of the heat-dissipation pattern and a top surface of the connection pattern are exposed by the first mold layer.
1. A semiconductor package comprising:
a package substrate;
a first semiconductor chip disposed on the package substrate;
a heat-dissipation pattern disposed on the first semiconductor chip;
a first mold layer disposed on the package substrate and at least partially surrounding the first semiconductor chip and the heat-dissipation pattern;
a redistribution layer disposed on the first mold layer;
a penetration electrode penetrating the first mold layer and coupled to the package substrate; and
a connection pattern disposed on the penetration electrode, and connecting the redistribution layer to the penetration electrode,
wherein a top surface of the heat-dissipation pattern and a top surface of the connection pattern are exposed by the first mold layer,
wherein the heat-dissipation pattern comprises a first seed/barrier layer facing the first semiconductor chip, and the first seed/barrier layer has a top surface that is a portion of the top surface of the heat-dissipation pattern.
2. The semiconductor package of claim 1 , wherein the heat-dissipation pattern and the connection pattern are in direct contact with the redistribution layer.
3. The semiconductor package of claim 1 , wherein the first mold layer comprises:
a second mold layer provided on the package substrate and at least partially surrounding the first semiconductor chip; and
a third mold layer provided on the second mold layer and at least partially surrounding the heat-dissipation pattern and the connection pattern,
wherein a top surface of the second mold layer is coplanar with a top surface of the first semiconductor chip, and
a top surface of the third mold layer is coplanar with the top surface of the heat-dissipation pattern and the top surface of the connection pattern.
4. The semiconductor package of claim 1 , wherein the heat-dissipation pattern and the connection pattern comprise the same metallic material.
5. The semiconductor package of claim 1 , wherein a first width of the connection pattern is larger than a second width of the penetration electrode.
6. The semiconductor package of claim 1 , wherein the heat-dissipation pattern includes one of:
a plate-shaped pattern covering a top surface of the first semiconductor chip;
a mesh-shaped pattern disposed on the top surface of the first semiconductor chip and extended in a first direction and a second direction crossing the first direction;
line-shaped patterns extending in the first direction and arranged in the second direction on the top surface of the first semiconductor chip; or
island-shaped patterns arranged in the first and second directions on the top surface of the first semiconductor chip.
7. The semiconductor package of claim 1 , wherein a first thickness of the heat-dissipation pattern is substantially equal to a second thickness of the connection pattern.
8. The semiconductor package of claim 7 , wherein the first thickness of the heat-dissipation pattern and the second thickness of the connection pattern ranges from about 1 μm to about 10 μm.
9. The semiconductor package of claim 1 , wherein
the connection pattern comprises a second seed/barrier layer facing the penetration electrode.
10. The semiconductor package of claim 1 , further comprising:
a second semiconductor chip disposed on the redistribution layer; and
a fourth mold layer disposed on the redistribution layer and covering the second semiconductor chip.
11. A semiconductor package comprising:
a package substrate;
a first semiconductor chip disposed on the package substrate;
a redistribution layer disposed on the first semiconductor chip;
a first metal pattern disposed between the first semiconductor chip and the redistribution layer;
a first seed/barrier layer interposed between the first semiconductor chip and the first metal pattern;
a first mold layer disposed on the package substrate and at least partially surrounding the first semiconductor chip;
a second mold layer disposed on the first mold layer and at least partially surrounding the first metal pattern;
a vertical connection terminal provided at a side of the first semiconductor chip and penetrating the first mold layer and the second mold layer, wherein the vertical connection terminal connects the package substrate to the redistribution layer; and
outer terminals disposed on a bottom surface of the package substrate,
wherein a top surface of the first mold layer is coplanar with a top surface of the first semiconductor chip, and
a top surface of the second mold layer is coplanar with a top surface of the first metal pattern,
wherein a top surface of the first seed/barrier layer is coplanar with the top surface of the first metal pattern.
12. The semiconductor package of claim 11 , wherein the vertical connection terminal comprises:
a penetration electrode vertically penetrating the first mold layer and coupled to the package substrate;
a second metal pattern vertically penetrating the second mold layer and connecting the redistribution layer to the penetration electrode; and
a second seed/barrier layer interposed between a bottom surface of the second metal pattern and a top surface of the penetration electrode.
13. The semiconductor package of claim 12 , wherein a first width of the second metal pattern is larger than a second width of the penetration electrode.
14. The semiconductor package of claim 12 , wherein the first metal pattern and the second metal pattern comprise the same metallic material.
15. The semiconductor package of claim 12 , wherein a first thickness of the first metal pattern is substantially equal to a second thickness of the second metal pattern.
16. The semiconductor package of claim 11 , wherein the first metal pattern includes one of:
a plate-shaped pattern covering the top surface of the first semiconductor chip;
a mesh-shaped pattern disposed on the top surface of the first semiconductor chip and extended in a first direction and a second direction crossing the first direction;
line-shaped patterns extending in the first direction and arranged in the second direction on the top surface of the first semiconductor chip; or
island-shaped patterns arranged in the first and second directions on the top surface of the first semiconductor chip.
17. The semiconductor package of claim 11 , further comprising:
a second semiconductor chip disposed on the redistribution layer; and
a third mold layer disposed on the redistribution layer and covering the second semiconductor chip.
18. A method of fabricating a semiconductor package, the method comprising:
mounting a semiconductor chip on a package substrate;
forming a penetration electrode on the package substrate;
forming a first mold layer on the package substrate, the semiconductor chip, and the penetration electrode;
performing a first planarization process on the first mold layer such that a first surface of the semiconductor chip and a first surface of the penetration electrode are exposed;
forming a first seed/barrier layer on the semiconductor chip;
forming a metal pattern on the first mold layer, wherein the metal pattern comprises a heat-dissipation pattern and a connection pattern, wherein the heat-dissipation pattern is placed on the first surface of the semiconductor chip, and the connection pattern is placed on the penetration electrode, wherein the heat-dissipation pattern comprises the first seed/barrier layer, wherein a top surface of the first seed/barrier layer is a portion of a top surface of the heat-dissipation pattern;
forming a second mold layer on the first mold layer, the heat-dissipation pattern and the connection pattern;
performing a second planarization process on the second mold layer such that a first surface of the heat-dissipation pattern and a first surface of the connection pattern are exposed; and
forming a redistribution layer, which is coupled to the connection pattern, on the second mold layer.
19. The method of claim 18 , wherein the forming of the metal pattern comprises:
forming a photoresist layer on the first mold layer;
patterning the photoresist layer to form a first hole and a second hole, wherein the first hole exposes the first surface of the semiconductor chip, and the second hole exposes the first surface of the penetration electrode; and
filling the first hole and the second hole with a conductive material to form the heat-dissipation pattern and the connection pattern.
20. The method of claim 19 , wherein the entirety of the first hole overlaps a portion of the first surface of the semiconductor chip, and
the second hole overlaps the entirety of the first surface of the penetration electrode.