IP Library › Granted Patent US 12,362,317
Granted Patent B2
US 12,362,317 · App. 17/677,702 · Granted Jul 15, 2025

Semiconductor die dipping structure

Inventors: Chi-Chun Peng (Hsinchu, TW); Chih-Yuan Chiu (Zhudong Township, TW); Min-Yu Wu (Hsinchu, TW); Yi-Kai Tu (Hsinchu, TW); Cheng-Lung Wu (Zhunan Township, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L24/97B23K1/203B23K3/082H01L23/32H01L24/75H01L24/81H01L2224/16227H01L2224/75183H01L2224/81024H01L2224/81801H01L2924/15311
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Quick Facts
Patent No.
US 12,362,317
App. No.
17/677,702
Granted
Jul 15, 2025
Kind
B2
Abstract

A die dipping structure includes a plate including a first recessed portion having a first depth and filled with a first flux material. The plate further includes a second recessed portion, isolated from the first recessed portion, with a second depth and filled with a second flux material. The second depth is different from the first depth. The die dipping structure further includes a motor configured to move the plate so as to simultaneously dip a first die and a second die into the flux of the first recessed portion and the flux of the second recessed portion, respectively.

Claims (32)

1. A die dipping structure, comprising:

a plate comprising:

a first recessed portion having a first depth and being filled with a first flux material; and

a second recessed portion, isolated from the first recessed portion, having a second depth and being filled with a second flux material, wherein the second depth is different from the first depth; and

a motor configured to move the plate so as to simultaneously dip a first die and a second die into the flux of the first recessed portion and the flux of the second recessed portion, respectively.

2. The die dipping structure of claim 1 , wherein the first recessed portion and the second recessed portion are laterally spaced apart from each other at a distance greater than or equal to 1 millimeter.

3. The die dipping structure of claim 1 , wherein the first depth is greater than or equal to 20 micrometers.

4. The die dipping structure of claim 1 , wherein the second depth is greater than or equal to 1 micrometer.

5. The die dipping structure of claim 1 , wherein the first flux material and the second flux material are different.

6. The die dipping structure of claim 1 , wherein the first flux material and the second flux material are the same.

7. The die dipping structure of claim 1 , further comprising an arm configured to hold a first die and a second die, with the first die having a first top surface facing down and the second die having a second top surface facing down, wherein the first die has a first connector with a first height on the first top surface, and the second die has a second connector with a second height on the second top surface.

8. The die dipping structure of claim 7 , wherein the first height corresponds to the first depth, and the second height corresponds to the second depth.

9. A die dipping structure, comprising:

an arm configured to hold a first die and a second die, wherein the first die has a first connector with a first height and the second die has a second connector with a second height;

a plate comprising:

a first recessed portion containing a first flux material, the first flux material having a third height;

a second, discrete recessed portion containing a second flux material, the second flux material having a fourth height, wherein the first height and second height correspond to the third height and fourth height, respectively; and

a motor configured to move the plate to align the first connector and second connector with the first recessed portion and the second recessed portion, respectively.

10. The die dipping structure of claim 9 , wherein the first height is greater than the third height, and the second height is greater than the fourth height.

11. The die dipping structure of claim 10 , wherein a first ratio of the third height to the first height and a second ratio of the fourth height to the second height are both less than or equal to 0.6.

12. The die dipping structure of claim 9 , wherein the first recessed portion is laterally spaced apart from the second recessed portion from each other at a distance greater than or equal to 1 millimeter.

13. The die dipping structure of claim 9 , wherein the third height is greater than or equal to 20 micrometers.

14. The die dipping structure of claim 9 , wherein the fourth height is greater than or equal to 1 micrometer.

15. The die dipping structure of claim 9 , wherein the first flux material and the second flux material are the same or different.

16. The die dipping structure of claim 9 , wherein the first recessed portion comprises a first depth, the second recessed portion comprises a second depth equal to the first depth, and the third height is different from the fourth height.

17. The die dipping structure of claim 9 , wherein the first recessed portion comprises a first depth, the second recessed portion comprises a second depth, the third height is less than the first depth, and the fourth height is less than the second depth.

18. A method, comprising:

providing a plate comprising a first recessed portion having a first depth and being filled with a first flux material, and a second recessed portion having a second depth and being filled with a second flux material, wherein the second depth is different from the first depth; and

concurrently dipping a first die into the first recessed portion and dipping a second die into the second recessed portion, so as to coat a first connector of the first die and a second connector of the second die with the first flux material and second flux material, respectively.

19. The method of claim 18 , wherein concurrently dipping a first die into the first recessed portion and dipping a second die into the second recessed portion further comprises:

moving the plate, via a motor, to align with the first die and the second die.

20. The method of claim 18 , wherein the first connector corresponds to the first depth, and the second connector corresponds to the second depth.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 22, 2022
From: PENG, CHI-CHUN; CHIU, CHIH-YUAN; WU, MIN-YU; TU, YI-KAI; WU, CHENG-LUNG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 059068/0897 →
Continuity (2)
Provisional Application 63225072 · Jul 23, 2021
Related Publication 20230023353A1 · Jan 26, 2023
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