Layout techniques and optimization for power transistors
An example field effect transistor includes a substrate, a first source metal over the substrate, a second source metal over the substrate, and a drain metal positioned between the first source metal and the second source metal over a channel of the field effect transistor. The drain metal includes a drain metal body having a notched region between the first source metal and the second source metal over the channel, and the notched region defines a first projecting portion and a second projecting portion of the drain metal body. In one aspect, the first projecting portion and the second projecting portion are positioned on respective sides of the notched region. The notched region is a triangular-shaped notched region in one example.
1. A field effect transistor, comprising:
a substrate;
a first source metal over the substrate;
a second source metal over the substrate; and
a drain metal, a first drain metal contact, and a second drain metal contact positioned between the first source metal and the second source metal, the first drain metal contact and the second drain metal contact being positioned below the drain metal with an aperture formed under the drain metal and between the first drain metal contact and the second drain metal contact, wherein:
the drain metal comprises a drain metal body having a notched region between the first source metal and the second source metal; and
the notched region defines a first projecting portion and a second projecting portion of the drain metal body.
2. The field effect transistor of claim 1 , wherein the first projecting portion and the second projecting portion are positioned on respective sides of the notched region.
3. The field effect transistor of claim 1 , wherein the notched region is a triangular-shaped notched region.
4. The field effect transistor of claim 1 , wherein the drain metal comprises a first drain metal of a first metal material and a second drain metal of a second metal material different than the first metal material.
5. The field effect transistor of claim 1 , wherein:
the aperture is defined between a first drain metal column and a second drain metal column over the substrate and below the drain metal.
6. The field effect transistor of claim 1 , further comprising a first source-connected field plate (SFP), a second source-connected field plate (SFP), a first gate finger, and a second gate finger.
7. The field effect transistor of claim 6 , wherein:
the first source metal and first SFP comprise a first overhang that defines a first overhang aperture in which the first gate finger is positioned; and
the second source metal and second SFP comprise a second overhang that defines a second overhang aperture in which the second gate finger is positioned.
8. The field effect transistor of claim 1 , further comprising a gate manifold, the gate manifold comprising a gate manifold body, a first angled gate tab, and a second angled gate tab.
9. The field effect transistor of claim 1 , wherein the field effect transistor is a gallium nitride (GaN)-on-silicon transistor or a GaN-on-silicon-carbide transistor.
10. The field effect transistor of claim 1 , further comprising:
a shielding comprising a first end connected to an end of the first source metal and a second end connected to an end of the second source metal, the shielding further comprising a depressed region directly contacting the substrate and extending along an end of the drain metal.
11. A field effect transistor, comprising:
a substrate;
a first source metal over the substrate;
a second source metal over the substrate;
a drain metal positioned between the first source metal and the second source metal; and
a gate manifold, the gate manifold comprising a gate manifold body, a first angled gate tab extending to a first gate contact region at an end of the first source metal, and a second angled gate tab extending to a second gate contact region at an end of the second source metal, wherein:
the drain metal comprises a drain metal body having a notched region between the first source metal and the second source metal; and
the notched region defines a first projecting portion and a second projecting portion of the drain metal body.
12. The field effect transistor of claim 11 , wherein the first gate contact region and the second gate contact region are positioned wider apart from each other than a width of the drain metal positioned between the first source metal and the second source metal.
13. The field effect transistor of claim 11 , wherein:
the first angled gate tab extends at a first angle from the gate manifold body; and
the second angled gate tab extends at a second angle from the gate manifold body.
14. The field effect transistor of claim 11 , wherein:
the first angled gate tab comprises a first region extending from a first corner of the gate manifold body and a second region extending from the first region of the first angled gate tab to the first gate contact region; and
the second angled gate tab comprises a first region extending from a second corner of the gate manifold body and a second region extending from the first region of the second angled gate tab to the second gate contact region.
15. The field effect transistor of claim 14 , wherein:
the second region of the first angled gate tab is positioned parallel to and offset from a first side of the gate manifold body; and
the second region of the second angled gate tab is positioned parallel to and offset from a second side of the gate manifold body.
16. A field effect transistor, comprising:
a substrate;
a first source metal over the substrate;
a second source metal over the substrate;
a drain metal positioned between the first source metal and the second source metal; and
a shielding, the shielding comprising a first end connected to an end of the first source metal and a second end connected to an end of the second source metal, the shielding further comprising a depressed region directly contacting the substrate and extending along an end of the drain metal, wherein:
the drain metal comprises a drain metal body having a notched region between the first source metal and the second source metal; and
the notched region defines a first projecting portion and a second projecting portion of the drain metal body.
17. A field effect transistor, comprising:
a substrate;
a first source metal over the substrate;
a second source metal over the substrate;
a drain metal positioned between the first source metal and the second source metal;
a gate manifold; and
a shielding connected to the first source metal and the second source metal, the shielding comprising a depressed region directly contacting the substrate, the depressed region extending along an end of the drain metal and between the end of the drain metal and the gate manifold, wherein:
the drain metal comprises a drain metal body having a notched region between the first source metal and the second source metal; and
the notched region defines a first projecting portion and a second projecting portion of the drain metal body.
18. The field effect transistor of claim 17 , wherein the gate manifold comprises a gate manifold body, a first angled gate tab, and a second angled gate tab.
19. The field effect transistor of claim 18 , wherein the shielding comprises a first stepped region, a second stepped region, and the depressed region positioned between the first stepped region and the second stepped region, the depressed region directly contacting the substrate, the first stepped region and the second stepped region being raised from a surface of the substrate.
20. The field effect transistor of claim 19 , wherein:
the first angled gate tab extends through a recess defined by the first stepped region of the shielding such that the shielding does not contact the first angled gate tab; and
the second angled gate tab extends through a recess defined by the second stepped region of the shielding such that the shielding does not contact the second angled gate tab.