Hybrid patterning-bonding semiconductor tool
A device includes a first set of modules configured for wafer shape correction and a second set of modules configured for wafer bonding. The first set of modules includes a metrology module configured to measure wafer shape data of a first wafer and a second wafer, including relative z-height values of the first wafer and the second wafer. A stressor film deposition module is configured to form a first stressor film on the first wafer. A stressor film modification module is configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer and is generated based on the wafer shape data. The second set of modules includes an alignment module configured to align the first wafer with the second wafer, and a bonding module configured to bond the first wafer to the second wafer.
1. A device for bonding wafers together, the device comprising:
a first set of modules configured for wafer shape correction, the first set of modules comprising:
a metrology module configured to measure wafer shape data of a first wafer and a second wafer, the first wafer having a front side working surface and a backside surface opposite the front side working surface,
a stressor film deposition module configured to form a first stressor film on the backside surface of the first wafer, and
a stressor film modification module configured to modify the first stressor film based on a first modification map that defines adjustments to internal stresses of the first wafer, the first modification map generated based on the wafer shape data of the first wafer and the second wafer; and
a second set of modules configured for bonding the first wafer and the second wafer, the second set of modules comprising:
an alignment module configured to align the first wafer with the second wafer, and
a bonding module configured to bond the front side working surface of the first wafer to the second wafer;
wherein the stressor film deposition module is configured to form the first stressor film on the backside surface of the first wafer based on the first modification map; and
wherein the stressor film modification module comprises a heat array with heat zones having independent temperature control and the heat zones each comprises micro- or nano-resistors, which are each configured to generate a respective amount of heat based on a respective current flowing through.
2. The device of claim 1 , wherein the stressor film deposition module comprises at least one of a spin coating apparatus, a spray coating apparatus or a vapor deposition apparatus.
3. The device of claim 1 , wherein the stressor film modification module comprises a direct-write exposure apparatus configured to expose the first stressor film to a pattern of electromagnetic radiation based on the first modification map.
4. The device of claim 3 , wherein the stressor film modification module comprises a development apparatus configured to develop a photoresist layer of the first stressor film to form a relief pattern.
5. The device of claim 4 , wherein the stressor film modification module comprises an etching apparatus configured to etch a shape control layer of the first stressor film using the relief pattern as an etching mask.
6. The device of claim 1 , wherein the stressor film modification module comprises a hot plate with temperature control by zone.
7. The device of claim 1 , wherein at least one resistor of the micro- or nano-resistors is integrated into a wafer chuck that is configured to hold the first wafer.
8. The device of claim 1 , wherein the stressor film modification module comprises a laser system configured to heat at least one of the first wafer or a wafer chuck that is configured to hold the first wafer.
9. The device of claim 1 , further comprising a controller configured to generate the first modification map based on the wafer shape data of the first wafer and the second wafer.
10. The device of claim 9 , wherein the controller is configured to receive inputs from and provide outputs to at least one module selected from the group consisting of the metrology module, the stressor film deposition module, the stressor film modification module, the alignment module and the bonding module.
11. The device of claim 10 , wherein the controller is configured to control at least one process selected from the group consisting of measuring the wafer shape data, depositing the first stressor film, modifying the first stressor film, aligning the first wafer with the second wafer, and bonding the first wafer to the second wafer.
12. The device of claim 9 , wherein the controller is configured to generate the first modification map based on historic data in addition to the wafer shape data of the first wafer and the second wafer, the historic data including overlay information of historic wafers.
13. The device of claim 1 , wherein:
the stressor film deposition module is configured to form a second stressor film on the second wafer, and
the stressor film modification module is configured to modify the second stressor film based on a second modification map that defines adjustments to internal stresses of the second wafer, the second modification map generated based on the wafer shape data of the first wafer and the second wafer.
14. The device of claim 1 , wherein the alignment module and the bonding module are one integrated module such that there is no wafer transfer between the aligning and the bonding.
15. A device for bonding wafers together, the device comprising:
a first set of modules configured for wafer shape correction, the first set of modules comprising:
a metrology module configured to measure wafer shape data of a first wafer and a second wafer, the first wafer having a front side working surface and a backside surface opposite the front side working surface, and
a stressor film deposition module configured to form a first stressor film on the backside surface of the first wafer based on a first modification map that defines adjustments to internal stresses of the first wafer, the first modification map generated based on the wafer shape data of the first wafer and the second wafer; and
a second set of modules configured for aligning and bonding the first wafer and the second wafer, the second set of modules comprising:
an alignment module configured to align the first wafer with the second wafer, with no modification to the first stressor film between the forming and the aligning, and
a bonding module configured to bond the front side working surface of the first wafer to the second wafer;
wherein a stressor film deposition module is configured to form the first stressor film on the backside surface of the first wafer based on the first modification map; and
wherein the stressor film modification module comprises a heat array with heat zones having independent temperature control and the heat zones each comprises micro- or nano-resistors, which are each configured to generate a respective amount of heat based on a respective current flowing through.
16. The device of claim 15 , wherein:
the first modification map includes no pattern, and
the stressor film deposition module is configured to form the first stressor film as a blanket film.
17. The device of claim 1 , further comprising an inspection module configured to inspect the first wafer and the second wafer that are bonded to each other.
18. The device of claim 17 , wherein the inspection module is configured to inspect the first wafer and the second wafer that are bonded to each other via infrared light transmission imaging.