Semiconductor device
According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, a conductive body, and a gate electrode. The first semiconductor region is located on the first electrode and electrically connected with the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on a portion of the second semiconductor region. The conductive body is located in the first semiconductor region with an insulating part interposed. A lower surface of the conductive body includes first and second surfaces. The gate electrode is located in the insulating part. The gate electrode faces the second semiconductor region via a gate insulating layer. The second electrode is located on the second and third semiconductor regions. The second electrode is electrically connected with the second and third semiconductor regions.
1. A semiconductor device, comprising:
a first electrode;
a first semiconductor region located on the first electrode in a first direction and electrically connected with the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region located on a portion of the second semiconductor region, the third semiconductor region being of the first conductivity type;
a conductive body located in the first semiconductor region with an insulating part interposed,
the conductive body including a first conductive part and a second conductive part located on the first conductive part, a length of the first conductive part being greater than a length of the second conductive part in a second direction, the second direction being orthogonal to the first direction,
the first conductive part including
a first portion including a first surface and a second surface linked to the first surface, the first surface being parallel to the second direction, the second surface being oblique to the first and second directions, a second-direction length of the first portion increasing upward, and
a second portion located on the first portion, a second-direction length of the second portion decreasing upward;
a gate electrode located in the insulating part, the gate electrode facing the second semiconductor region via a gate insulating layer in the second direction; and
a second electrode located on the second and third semiconductor regions, the second electrode being electrically connected with the second and third semiconductor regions.
2. The device according to claim 1 , wherein
the conductive body further includes a third conductive part located on the second conductive part, and
the length of the second conductive part is less than a length of the third conductive part in the second direction.
3. The device according to claim 1 , wherein
a {100} plane of silicon oxide exists at a surface contacting the first surface of the insulating part, and
a {110} plane of silicon oxide exists at a surface contacting the second surface of the insulating part.
4. The device according to claim 1 , wherein
a pair of the gate electrodes is located in the insulating part, and
the pair of gate electrodes is apart from each other in the second direction.
5. The device according to claim 4 , wherein
a portion of the conductive body is located between the pair of gate electrodes in the second direction.
6. The device according to claim 1 , wherein
a lower end of the conductive body includes a void.
7. The device according to claim 6 , wherein
a distance in the first direction between the first electrode and the void is longer than a distance in the first direction between the first electrode and the gate electrode.
8. A semiconductor device, comprising:
a first electrode;
a first semiconductor region located on the first electrode in a first direction and electrically connected with the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region located on a portion of the second semiconductor region, the third semiconductor region being of the first conductivity type;
a conductive body located in the first semiconductor region with an insulating part interposed,
the conductive body including
a first conductive part positioned at a lower end of the conductive body, and
a second conductive part located on the first conductive part,
the first conductive part being longer than the second conductive part in a second direction orthogonal to the first direction,
a lower end of the conductivity body including a void;
a gate electrode located in the insulating part, the gate electrode facing the second semiconductor region via a gate insulating layer in the second direction; and
a second electrode located on the second and third semiconductor regions and electrically connected with the second and third semiconductor regions.
9. The device according to claim 8 , wherein
a pair of the gate electrodes is located in the insulating part, and
the pair of gate electrodes is apart from each other in the second direction.
10. The device according to claim 9 , wherein
a portion of the conductive body is located between the pair of gate electrodes in the second direction.
11. The device according to claim 8 , wherein
a distance in the first direction between the first electrode and the void is longer than a distance in the first direction between the first electrode and the gate electrode.
12. A semiconductor device, comprising:
a first electrode;
a first semiconductor region located on the first electrode in a first direction and electrically connected with the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region located on a portion of the second semiconductor region, the third semiconductor region being of the first conductivity type;
a conductive body located in the first semiconductor region with an insulating part interposed, the conductive body including a first conductive part and a second conductive part located on the first conductive part, a length of the first conductive part is greater than a length of the second conductive part in the second direction, the second direction being orthogonal to the first direction,
the first conductive part including
a first surface parallel to the second direction, and
a second surface linked to the first surface, the second surface being oblique to the first and second directions, an angle between the first and second surfaces being greater than 90 degrees;
a gate electrode located in the insulating part, the gate electrode facing the second semiconductor region via a gate insulating layer in the second direction; and
a second electrode located on the second and third semiconductor regions, the second electrode being electrically connected with the second and third semiconductor regions.
13. The device according to claim 12 , wherein
the conductive body further includes a third conductive part located on the second conductive part, and
the length of the second conductive part is less than a length of the third conductive part in the second direction.
14. The device according to claim 12 , wherein
the first conductive part includes:
a first portion including the first and second surfaces, a second-direction length of the first portion increasing upward; and
a second portion located on the first portion, a second-direction length of the second portion decreasing upward.
15. The device according to claim 12 , wherein
a {100} plane of silicon oxide exists at a surface contacting the first surface of the insulating part, and
a {110} plane of silicon oxide exists at a surface contacting the second surface of the insulating part.
16. The device according to claim 12 , wherein
a pair of the gate electrodes is located in the insulating part, and
the pair of gate electrodes is apart from each other in the second direction.
17. The device according to claim 16 , wherein
a portion of the conductive body is located between the pair of gate electrodes in the second direction.
18. The device according to claim 12 , wherein
a lower end of the conductive body includes a void.
19. The device according to claim 18 , wherein
a distance in the first direction between the first electrode and the void is longer than a distance in the first direction between the first electrode and the gate electrode.