Spacer features for nanosheet-based devices
A semiconductor device includes a base portion on a semiconductor substrate, a channel layer vertically above the base portion and extending parallel to a top surface of the semiconductor substrate, a gate portion between the channel layer and the base portion, a source/drain feature connected to the channel layer, an inner spacer between the source/drain feature and the gate portion, and an air gap between the source/drain feature and the semiconductor substrate. Moreover, a bottom surface of the source/drain feature is exposed in the air gap.
1. A semiconductor device, comprising:
a base portion on a semiconductor substrate;
a channel layer vertically above the base portion and extending parallel to a top surface of the semiconductor substrate;
a gate portion between the channel layer and the base portion;
a source/drain feature connected to the channel layer;
an inner spacer between the source/drain feature and the gate portion, wherein the inner spacer includes a first spacer material in contact with the gate portion and a second spacer material spaced apart from the gate portion by the first spacer material, wherein a dielectric constant of the second spacer material is greater than a dielectric constant of the first spacer material; and
an air gap between the source/drain feature and the semiconductor substrate,
wherein a sidewall surface of the source/drain feature facing the inner spacer is entirely interfacing a dielectric material of the inner spacer without opening spaces,
wherein a bottom surface of the source/drain feature is exposed in the air gap.
2. The semiconductor device of claim 1 , further comprising a spacer layer on a sidewall surface of the base portion, wherein the spacer layer and the bottom surface of the source/drain feature define the air gap.
3. The semiconductor device of claim 2 , wherein the source/drain feature is spaced away from the base portion by a portion of the spacer layer.
4. The semiconductor device of claim 2 , wherein a top surface of the spacer layer extends between the top surface of the base portion and a bottom surface of the channel layer.
5. The semiconductor device of claim 2 , wherein the spacer layer is a conformal layer having a sidewall thickness ranging between about 1 nm to about 5 nm.
6. The semiconductor device of claim 1 , wherein the inner spacer further comprises:
a first spacer material that includes silicon dioxide (SiO2), silicon oxynitride (SiON), silicon oxycarbide (SiOC), silicon oxycarbonitride (SiOCN), or combinations thereof and a second spacer material that includes aluminum (Al), titanium (Ti), lithium (Li), hafnium (Hf), zirconium (Zr), lanthanum (La), molybdenum (Mo), cobalt (Co), silicon (Si), oxygen (O), nitrogen (N), carbon (C), or a combination thereof.
7. The semiconductor device of claim 6 , wherein the first spacer material has a k value less than about 7, and the second spacer material has a k value greater than about 7.
8. The semiconductor device of claim 1 , wherein the air gap has a vertical dimension of about 20 nm to about 50 nm.
9. A device, comprising:
a semiconductor substrate having a first surface;
base structures protruding vertically above the first surface;
a plurality of channel layers vertically arranged over the base structures;
gate portions between vertically adjacent channel layers;
inner spacers on sidewall surfaces of the gate portions, wherein each inner spacer has a first sublayer adjacent the gate portions and a second sublayer spaced apart from the gate portions and a dielectric constant of the second sublayer is greater than a dielectric constant of the first sublayer;
source/drain features on sidewall surfaces of the inner spacers and sidewall surfaces of the channel layers;
spacer layers on sidewall surfaces of the base structures and the first surface of the semiconductor substrate; and
air gaps defined by the spacer layers and the source/drain features.
10. The device of claim 9 , wherein the source/drain features are each spaced away from the base structures.
11. The device of claim 9 , wherein the spacer layers each have vertical portions on sidewall surfaces of base structures and a horizontal portion on the first surface of the semiconductor substrate; and
wherein the air gaps each extend horizontally between the vertical portions of the respective spacer layer and extending vertically from a bottom surface of a respective source/drain feature to the horizontal portion of the respective spacer layer.
12. The device of claim 9 , wherein the spacer layers each have a top surface extending along a top surface of a respective base structure.
13. The device of claim 9 , wherein the first sublayer wraps around the second sublayer on three sides, and wherein the first sublayer and the second sublayer include different materials.
14. The device of claim 9 , wherein a bottom surface of the source/drain features extends below a top surface of the base structures.
15. A method, comprising:
receiving a semiconductor substrate having a stack of first semiconductor layers and second semiconductor layers thereon and a gate structure over the stack, the first semiconductor layers and the second semiconductor layers having different material compositions;
recessing the stack to form source/drain trenches on both sides of the gate structure and extending into the semiconductor substrate;
forming first spacers between end portions of vertically adjacent first semiconductor layers;
after the forming the first spacers, forming a blocking layer covering exposed surfaces of the semiconductor substrate; and
forming source/drain features from sidewall surfaces of the second semiconductor layers and away from the semiconductor substrate.
16. The method of claim 15 , wherein the forming of the blocking layer includes:
forming a spacer layer on sidewall surfaces of the second semiconductor layers and on sidewall surfaces of the first spacers;
forming a sacrificial layer on and covering lower portions of the spacer layer, the sacrificial layer having a top surface extending between a bottom surface of the bottommost first semiconductor layer and a top surface of the bottommost first semiconductor layer; and
recessing top portions of the spacer layer not covered by the sacrificial layer.
17. The method of claim 16 , wherein the forming of the first spacers includes forming openings between end portions of the first spacers,
wherein the forming of the spacer layer includes depositing a dielectric material into openings, and
wherein the recessing of the top portions of the spacer layer forms second spacers within the openings.
18. The method of claim 15 , wherein the forming of the first spacers includes:
laterally etching the first semiconductor layers from sidewall surfaces of the first semiconductor layers exposed in the source/drain trenches to form gaps;
depositing a spacer material layer in the source/drain trenches and the gaps; and
etching back the spacer material layer to remove portions of the spacer material layer outside the gaps.
19. The method of claim 15 , wherein the forming of the source/drain features also forms air gaps between the source/drain features and the blocking layer.
20. The method of claim 15 , wherein the forming of the source/drain features includes implementing a mixture of silane (SiH 4 ) and a dichlorosilane (SiH 2 Cl 2 ), wherein the silane is at a first concentration and the dichlorosilane is at a second concentration, and wherein a ratio of the first concentration to the second concentration is about 1:5 to about 5:1.