Memory and forming method thereof
The present disclosure relates to a memory and a forming method thereof. The method of forming a memory includes: forming a stacked layer on a surface of a substrate, the stacked layer including interlayer isolation layers arranged at intervals in a first direction and a sacrificial layer group located between adjacent two of the interlayer isolation layers, the sacrificial layer group including a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer sequentially stacked in the first direction, and the stacked layer including a transistor region, where the first direction is a direction perpendicular to a top surface of the substrate; removing the first sacrificial layer in the transistor region to form a first gap; forming an active pillar in the first gap; removing the second sacrificial layer and the third sacrificial layer in the transistor region to form a second gap.
1. A memory, comprising:
a substrate; and
a stacked structure located on a top surface of the substrate and comprising memory cells arranged at intervals in a first direction, wherein the first direction is a direction perpendicular to the top surface of the substrate; and
each memory cell comprises a transistor and a capacitor electrically connected to the transistor, the transistor comprises an active pillar, the capacitor comprises a bottom electrode layer, the bottom electrode layer comprises a terminal portion and a body portion, and the terminal portion protrudes from the body portion in a second direction and is in contact and electric connection with the active pillar, wherein the second direction is a direction parallel to the top surface of the substrate.
2. The memory according to claim 1 , wherein the active pillar comprises a channel region, and a source region and a drain region arranged on two opposite sides of the channel region in the second direction, and the terminal portion is in contact and electric connection with the drain region; the stacked structure further comprises memory cells arranged at intervals in a third direction, the third direction is a direction parallel to the top surface of the substrate, and the second direction intersects with the third direction; and
the stacked structure further comprises word lines arranged at intervals in the first direction, and the word lines extend in the third direction and continuously cover the channel regions arranged at intervals in the third direction.
3. The memory according to claim 2 , wherein the stacked structure further comprises:
second isolation layers, arranged at intervals in the first direction, located on surfaces of the active pillars, and wrapping the word lines.
4. The memory according to claim 2 , wherein the stacked structure further comprises:
bit lines, arranged at intervals in the third direction, extending in the first direction, and continuously in contact and electric connection with the source regions arranged at intervals in the first direction.
5. The memory according to claim 4 , wherein at least a part of the source region of the active pillar extends into the bit line.