Nitride semiconductor device
The present disclosure provides a nitride semiconductor device. The nitride semiconductor device includes: an electron transport layer, made of a nitride semiconductor; an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer; a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply layer; a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer; and a gate layer, disposed on the second protective layer.
1. A nitride semiconductor device, comprising:
an electron transport layer, made of a nitride semiconductor;
an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer;
a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply layer;
a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer;
a gate layer, disposed on the second protective layer and made of a nitride semiconductor that has a band gap less than the band gap of the nitride semiconductor of the second protective layer and contains acceptor-type impurities;
a gate electrode, disposed on the gate layer; and
a source electrode and a drain electrode, connected with the electron supply layer, wherein
an area of the second protective layer is same as an area of a bottom surface of the gate layer in a top plan view,
the gate layer includes:
a gate body, on which the gate electrode is located; and
an inclined portion, inclined outwardly from a side surface of the gate body, and
the gate layer further includes a flat portion extending from the inclined portion along the second protective laver.
2. The nitride semiconductor device of claim 1 , wherein the electron supply layer includes:
a source contact, in contact with the source electrode; and
a drain contact, in contact with the drain electrode, wherein
the first protective layer is disposed on an upper surface of the electron supply layer excluding the source contact and the drain contact.
3. The nitride semiconductor device of claim 1 , further comprising a passivation layer that is
disposed on the first protective layer,
covering the second protective layer, the gate layer and the gate electrode and
including a source-side through hole and a drain-side through hole, wherein
the first protective layer includes:
a source-side opening, communicating with the source-side through hole and exposing a portion of the electron supply layer as a source contact in contact with the source electrode; and
a drain-side opening, communicating with the drain-side through hole and exposing a portion of the electron supply layer as a drain contact in contact with the drain electrode.
4. A nitride semiconductor device, comprising:
an electron transport layer, made of a nitride semiconductor;
an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer;
a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply laver;
a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer;
a gate layer, disposed on the second protective layer and made of a nitride semiconductor that has a band gap less than the band gap of the nitride semiconductor of the second protective layer and contains acceptor-type impurities;
a gate electrode, disposed on the gate layer; and
a source electrode and a drain electrode, connected with the electron supply layer, wherein
an area of the second protective layer is greater than an area of a bottom surface of the gate layer in a top plan view,
the electron supply layer includes:
a source contact, in contact with the source electrode; and
a drain contact, in contact with the drain electrode, and the second protective layer includes:
a base portion, located directly below the bottom surface of the gate layer;
a source-side extension portion, located outside the bottom surface of the gate layer in the top plan view and extending from the base portion toward the source contact; and
a drain-side extension portion, located outside the bottom surface of the gate layer in the top plan view and extending from the base portion toward the drain contact.
5. The nitride semiconductor device of claim 4 , wherein the source-side extension portion and the drain-side extension portion have a same thickness as a thickness of the base portion.
6. The nitride semiconductor device of claim 4 , wherein the gate layer includes:
a gate body, on which the gate electrode is located;
an inclined portion, inclined outwardly from a side surface of the gate body.
7. A nitride semiconductor device, comprising:
an electron transport layer, made of a nitride semiconductor;
an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer;
a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply layer;
a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer;
a gate layer, disposed on the second protective layer and made of a nitride semiconductor that has a band gap less than the band gap of the nitride semiconductor of the second protective layer and contains acceptor-type impurities;
a gate electrode, disposed on the gate layer; and
a source electrode and a drain electrode, connected with the electron supply layer, wherein
the second protective layer has a thickness less than a thickness of the electron supply layer and has a band gap less than a band gap of the electron supply layer.
8. A nitride semiconductor device, comprising:
an electron transport layer, made of a nitride semiconductor;
an electron supply layer, disposed on the electron transport layer and made of a nitride semiconductor having a band gap greater than a band gap of the nitride semiconductor of the electron transport layer;
a first protective layer, disposed on the electron supply layer and made of a nitride semiconductor having a band gap less than the band gap of the nitride semiconductor of the electron supply layer;
a second protective layer, disposed on a portion of the first protective layer and made of a nitride semiconductor having a band gap greater than the band gap of the nitride semiconductor of the first protective layer;
a gate layer, disposed on the second protective layer and made of a nitride semiconductor that has a band gap less than the band gap of the nitride semiconductor of the second protective layer and contains acceptor-type impurities;
a gate electrode, disposed on the gate layer; and
a source electrode and a drain electrode, connected with the electron supply layer, wherein
the first protective layer has a thickness less than a thickness of the gate layer.
9. The nitride semiconductor device of claim 8 , wherein
the electron transport layer is a GaN layer,
the electron supply layer is an AlGaN layer,
the first protective layer is a GaN layer,
the second protective layer is an AlGaN layer having an Al composition less than an Al composition of the electron supply layer, and
the gate layer is a GaN layer containing at least one of Mg and Zn as an acceptor type impurity.
10. The nitride semiconductor device of claim 9 , wherein
the electron supply layer is an Al x Ga 1-x N layer (0.1<x<0.3), and
the second protective layer is an Al y Ga 1-y N layer (0.05<y<x).
11. The nitride semiconductor device of claim 9 , wherein
at least one of the first protective layer and the second protective layer contains at least one of Mg and Zn as an acceptor-type impurity.
12. The nitride semiconductor device of claim 8 , wherein
a thickness of the electron supply layer is less than 20 nanometers (nm), and a thickness of the second protective layer is less than 10 nm.
13. The nitride semiconductor device of claim 8 , wherein
a thickness of the electron supply layer is less than 15 nm, and
a thickness of the second protective layer is less than 7 nm.
14. The nitride semiconductor device of claim 8 , wherein the electron supply layer includes:
a source contact, in contact with the source electrode; and
a drain contact, in contact with the drain electrode, wherein
the first protective layer is disposed on an upper surface of the electron supply layer excluding the source contact and the drain contact.
15. The nitride semiconductor device of claim 8 , further comprising a passivation layer that is
disposed on the first protective layer,
covering the second protective layer, the gate layer and the gate electrode, and
including a source-side through hole and a drain-side through hole, wherein
the first protective layer includes:
a source-side opening, communicating with the source-side through hole and exposing a portion of the electron supply layer as a source contact in contact with the source electrode; and
a drain-side opening, communicating with the drain-side through hole and exposing a portion of the electron supply layer as a drain contact in contact with the drain electrode.
16. The nitride semiconductor device of claim 8 , wherein
at least one of the first protective layer and the second protective layer contains acceptor-type impurities.