Integrated circuit packages having adhesion layers for through vias
In an embodiment, a device includes: a semiconductor die including a semiconductor material; a through via adjacent the semiconductor die, the through via including a metal; an encapsulant around the through via and the semiconductor die, the encapsulant including a polymer resin; and an adhesion layer between the encapsulant and the through via, the adhesion layer including an adhesive compound having an aromatic compound and an amino group, the amino group bonded to the polymer resin of the encapsulant, the aromatic compound bonded to the metal of the through via, the aromatic compound being chemically inert to the semiconductor material of the semiconductor die.
1. A device comprising:
a semiconductor die comprising a semiconductor material;
a through via adjacent the semiconductor die, the through via comprising a metal;
an encapsulant around the through via and the semiconductor die, the encapsulant comprising a molding compound; and
an adhesion layer between the encapsulant and the through via, the adhesion layer comprising an adhesive compound, the adhesive compound bonded to the molding compound of the encapsulant, the adhesive compound bonded to the metal of the through via, the adhesive compound being chemically inert to the semiconductor material of the semiconductor die.
2. The device of claim 1 , wherein the adhesive compound comprises an aromatic compound and an amine, and the molding compound comprises a polymer resin.
3. The device of claim 1 , further comprising:
a redistribution structure on the encapsulant, the redistribution structure comprising redistribution lines that are connected to the through via and the semiconductor die.
4. The device of claim 3 , further comprising:
a package substrate connected to the redistribution lines of the redistribution structure.
5. The device of claim 1 , further comprising:
a dielectric layer comprising a dielectric material, the adhesive compound being chemically inert to the dielectric material of the dielectric layer; and
an under-bump metallurgy layer having a line portion on the dielectric layer, the through via disposed on the line portion of the under-bump metallurgy layer, the under-bump metallurgy layer comprising a metal, the adhesive compound bonded to the metal of the under-bump metallurgy layer.
6. The device of claim 1 , wherein the semiconductor die comprises active devices.
7. The device of claim 1 , wherein the semiconductor die is free of active devices.
8. The device of claim 1 , wherein a top surface of the encapsulant is substantially coplanar with a top surface of the adhesion layer and a top surface of the through via.
9. The device of claim 1 , wherein a top surface of the encapsulant is substantially coplanar with a top surface of the adhesion layer, and a top surface of the through via is recessed from the top surface of the encapsulant and the top surface of the adhesion layer.
10. A device comprising:
a plurality of integrated circuit dies;
a first encapsulant around the integrated circuit dies;
a dielectric layer over the first encapsulant;
an interconnection die over the dielectric layer, the interconnection die comprising die bridges that interconnect the integrated circuit dies;
a second encapsulant around the interconnection die;
a through-mold via extending through the second encapsulant; and
an adhesion layer between the through-mold via and the second encapsulant, the adhesion layer bonded to the through-mold via and the second encapsulant, the interconnection die and the dielectric layer being substantially free of the adhesion layer.
11. The device of claim 10 , wherein the interconnection die further comprises a through-substrate via.
12. The device of claim 11 , further comprising:
a redistribution structure over the second encapsulant, the redistribution structure comprising redistribution lines that are connected to the through-mold via and the through-substrate via; and
a package substrate connected to the redistribution lines of the redistribution structure.
13. The device of claim 10 , wherein the through-mold via comprises a metal, the second encapsulant comprises a resin, the adhesion layer comprises an aromatic compound and an amine, the aromatic compound is chemically bonded to the metal, and the amine is chemically bonded to the resin.
14. The device of claim 10 , further comprising:
an under-bump metallurgy layer over the dielectric layer, the through-mold via disposed over the under-bump metallurgy layer, the adhesion layer disposed between the under-bump metallurgy layer and the second encapsulant.
15. A device comprising:
a dielectric layer;
an under-bump metallurgy layer having a line portion on the dielectric layer;
a through via on the line portion of the under-bump metallurgy layer, the through via comprising a metal;
an adhesion layer on a sidewall of the through via, a top surface of the line portion, and a sidewall of the line portion, the adhesion layer comprising an adhesive compound, the adhesive compound of the adhesion layer chemically bonded to the metal of the through via;
an encapsulant around the adhesion layer, the encapsulant comprising a molding compound, the molding compound of the encapsulant chemically bonded to the adhesive compound of the adhesion layer; and
a redistribution structure on the encapsulant, the redistribution structure comprising a redistribution line connected to the through via.
16. The device of claim 15 , further comprising:
a package substrate connected to the redistribution line of the redistribution structure.
17. The device of claim 15 , wherein a top surface of the through via is substantially coplanar with a top surface of the encapsulant.
18. The device of claim 15 , wherein a top surface of the through via is below a top surface of the encapsulant.
19. The device of claim 15 , wherein the adhesion layer is one monolayer of the adhesive compound.
20. The device of claim 15 , wherein the adhesion layer is a plurality of monolayers of the adhesive compound.