Integrated circuit device
An integrated circuit device includes a substrate, an isolation feature, a memory cell, and a semiconductor device. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. The isolation feature is in the transition region. A top surface of the isolation feature has a first portion and a second portion lower than the first portion, the second portion of the top surface of the isolation feature is between the cell region and the first portion of the top surface of the isolation feature, and a bottom surface of the isolation feature has a step height directly below the second portion of the top surface of the isolation feature. The is memory cell over the cell region of the substrate. The semiconductor device is over the peripheral region of the substrate.
1. An integrated circuit device, comprising:
a substrate having a cell region, a peripheral region, and a transition region between the cell region and the peripheral region;
an isolation feature in the transition region, wherein a top surface of the isolation feature has a first portion and a second portion lower than the first portion, the second portion of the top surface of the isolation feature is between the cell region and the first portion of the top surface of the isolation feature, and a bottom surface of the isolation feature has a step directly below the second portion of the top surface of the isolation feature;
a memory cell over the cell region of the substrate; and
a semiconductor device over the peripheral region of the substrate.
2. The integrated circuit device of claim 1 , wherein the bottom surface of the isolation feature has a first portion and a second portion higher than the first portion of the bottom surface of the isolation feature, and the second portion of the bottom surface of the isolation feature is between the cell region and the first portion of the bottom surface of the isolation feature.
3. The integrated circuit device of claim 1 , wherein a top surface of the cell region of the substrate is lower than a top surface of the peripheral region of the substrate.
4. The integrated circuit device of claim 1 , wherein the second portion of the top surface of the isolation feature is lower than a top surface of the peripheral region of the substrate and higher than a top surface of the cell region of the substrate.
5. The integrated circuit device of claim 1 , further comprising:
a dummy semiconductor device over the first portion of the top surface of the isolation feature;
a semiconductor stack over the second portion of the top surface of the isolation feature; and
an interlayer dielectric layer over the top surface of the isolation feature, wherein the interlayer dielectric layer has a portion between the dummy semiconductor device and the semiconductor stack, and the step of the bottom surface of the isolation feature is directly below the portion of the interlayer dielectric layer.
6. The integrated circuit device of claim 1 , wherein the top surface of the isolation feature has a connecting portion connecting the first portion of the top surface of the isolation feature to the second portion of the top surface of the isolation feature, and the connecting portion of the top surface of the isolation feature vertically overlaps a portion of the bottom surface of the isolation feature between the step and the peripheral region.
7. The integrated circuit device of claim 1 , further comprising:
an etch stop layer extending over the first and second portions of the top surface of the isolation feature.
8. The integrated circuit device of claim 1 , wherein the isolation feature has an interface extending from the step of the bottom surface of the isolation feature to the second portion of the top surface of the isolation feature.
9. An integrated circuit device, comprising:
a substrate having a cell region, a peripheral region, and a transition region between the cell region and the peripheral region;
an isolation feature in the transition region, wherein a bottom surface of the isolation feature has a step;
a memory cell over the cell region of the substrate;
a semiconductor device over the peripheral region of the substrate; and
an interlayer dielectric layer over the isolation feature, wherein a bottom surface of the interlayer dielectric layer has a first portion and a second portion lower than the first portion of the bottom surface of the interlayer dielectric layer, and the step of the bottom surface of the isolation feature is directly below the second portion of the bottom surface of the interlayer dielectric layer.
10. The integrated circuit device of claim 9 , further comprising:
a dummy semiconductor device over the isolation feature; and
a semiconductor stack over the isolation feature, wherein the interlayer dielectric layer spaces the semiconductor stack from the dummy semiconductor device.
11. The integrated circuit device of claim 10 , wherein the semiconductor stack comprises a same gate electrode material as a select gate of the memory cell.
12. The integrated circuit device of claim 10 , wherein the dummy semiconductor device comprises a same metal material as the semiconductor device.
13. The integrated circuit device of claim 9 , further comprising:
an etch stop layer spacing the first and second portions of the bottom surface of the interlayer dielectric layer from the isolation feature.
14. The integrated circuit device of claim 13 , wherein the isolation feature has an interface extending from the step of the bottom surface of the isolation feature to the etch stop layer.
15. An integrated circuit device, comprising:
a substrate having a cell region, a peripheral region, and a transition region between the cell region and the peripheral region;
a first isolation feature in the transition region, wherein a bottom surface of the first isolation feature has a first portion, a second portion between the cell region and the first portion, and a step connecting the first portion to the second portion, a top surface of the first isolation feature has a first portion, a second portion lower than the first portion of the top surface of the first isolation feature, and a connecting portion connecting the first portion of the top surface of the first isolation feature to the second portion of the top surface of the first isolation feature, and the connecting portion of the top surface of the first isolation feature vertically overlaps the first portion of the bottom surface of the first isolation feature;
a memory cell over the cell region of the substrate; and
a semiconductor device over the peripheral region of the substrate.
16. The integrated circuit device of claim 15 , wherein the first and second portions of the bottom surface of the first isolation feature are at different levels.
17. The integrated circuit device of claim 15 , further comprising:
a dummy semiconductor device over the first portion of the top surface of the first isolation feature, wherein the dummy semiconductor device comprises a same metal material as the semiconductor device.
18. The integrated circuit device of claim 15 , further comprising:
a semiconductor stack over the second portion of the top surface of the first isolation feature, wherein the semiconductor stack comprises a same gate electrode material as a select gate of the memory cell.
19. The integrated circuit device of claim 15 , further comprises:
a second isolation feature in the cell region, wherein a bottom surface of the second isolation feature is substantially level with the second portion of the bottom surface of the first isolation feature.
20. The integrated circuit device of claim 15 , further comprises:
a third isolation feature in the peripheral region, wherein a bottom surface of the third isolation feature is substantially level with the first portion of the bottom surface of the first isolation feature.