Display device
The display device includes a substrate, a first and second assembly wirings on the substrate, a partition having a hole on the first and second assembly wirings, and a semiconductor light emitting device in the hole, wherein the hole configured to have an inner side with a first obtuse angle to a lower side, and wherein the semiconductor light emitting device configured to have at least one side having a second obtuse angle with respect to the lower side.
1. A display device, comprising:
a substrate;
a first and second assembly wirings on the substrate;
a first insulating layer between the first assembly wiring and the second assembly wiring;
a partition having a hole on the first and second wirings; and
a semiconductor light emitting device in the hole;
wherein the hole comprises an inner side with a first obtuse angle to a lower side thereof,
wherein the semiconductor light emitting device comprises at least one side having a second obtuse angle with respect to a lower side thereof,
wherein the semiconductor light emitting device comprises:
a light emitting part;
a first electrode on the light emitting part;
a second electrode below the light emitting part; and
a passivation layer around a side of the light emitting part,
wherein the second electrode is disposed around the side of the light emitting part,
wherein the second electrode is direct contact with a bottom surface of the light emitting part and a portion of a side surface of the light emitting part, and
wherein the first insulating layer is disposed on a top surface of the first assembly wiring and under a bottom surface of the second assembly wiring.
2. The display device according to claim 1 , wherein the second obtuse angle is the same as the first obtuse angle.
3. The display device according to claim 1 , wherein the second obtuse angle is different from the first obtuse angle, and
wherein a difference between the first obtuse angle and the second obtuse angle is less than 90°.
4. The display device according to claim 1 , wherein the second electrode is disposed on the passivation layer.
5. The display device according to claim 1 , wherein the second electrode comprises a reflective layer, and
wherein the reflective layer is disposed on a perimeter of the portion of the side surface of the light emitting part.
6. The display device according to claim 1 , wherein the second electrode comprises a magnetic layer, and
wherein the magnetic layer is disposed on a perimeter of the portion of the side surface of the light emitting part.
7. The display device according to claim 1 , wherein the second electrode comprises an electrode layer, and
wherein the electrode layer is disposed on a perimeter of the portion the side surface of the light emitting part.
8. The display device according to claim 1 , wherein the first electrode is disposed on one side of an upper surface of the light emitting part.
9. The display device according to claim 1 , wherein a side of the semiconductor light emitting device is parallel to the inner side of the hole.
10. The display device according to claim 1 , further comprising a connection portion in contact with the second electrode along the perimeter of the portion of the side surface of the semiconductor light emitting device within the hole.
11. The display device according to claim 10 , wherein the first and second assembly wirings are arranged in different layers, and
wherein the connection portion is connected to at least one assembly wiring of the first and second assembly wirings.
12. The display device according to claim 10 , further comprising a second insulating layer on the partition and the semiconductor light emitting device; and
an electrode wiring in contact with the first electrode through the second insulating layer.
13. The display device according to claim 1 , wherein a thickness of the partition is smaller than a thickness of the semiconductor light emitting device.
14. The display device according to claim 1 , wherein the semiconductor light emitting device comprises a vertical type semiconductor light emitting device.
15. A display device, comprising:
a substrate;
a first and second assembly wirings on the substrate;
a partition having a hole on the first and second wirings; and
a semiconductor light emitting device in the hole; and
a first insulating layer between the first assembly wiring and the second assembly wiring,
wherein the hole comprises an inner side with a first obtuse angle to a lower side thereof,
wherein the semiconductor light emitting device comprises at least one side having a second obtuse angle with respect to a lower side thereof,
wherein the semiconductor light emitting device comprises:
a light emitting part;
a first electrode on the light emitting part;
a second electrode below the light emitting part; and
a passivation layer around a side of the light emitting part,
wherein the second electrode is disposed around the side of the light emitting part, and
wherein the first insulating layer is disposed on a top surface of the first assembly wiring and under a bottom surface of the second assembly wiring.
16. The display device according to claim 15 , wherein a top surface of the first assembly wiring is disposed at a different height from a top surface of the second assembly wiring.
17. The display device according to claim 1 , wherein a top most surface of the first insulating layer is disposed under the second electrode of the light emitting part.
18. The display device according to claim 1 , wherein the first insulating layer is disposed between the second electrode of the light emitting part and the first assembly wiring.
19. The display device according to claim 16 , wherein a topmost surface of the first insulating layer is disposed under the second electrode of the light emitting part.
20. The display device according to claim 16 , wherein the first insulating layer is disposed between the second electrode of the light emitting part and the first assembly wiring.