Backside power plane
Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a first power plane electrically connected to a first plurality of via-to-backside power planes (VBPPs), a second power plane, and a plurality of pass through vias electrically connecting the second power plane to a second plurality of VBPPs, wherein the plurality of pass through vias pass through the first power plane.
1. A semiconductor structure, comprising:
a first power plane electrically connected to a first plurality of entirely metalized via-to-backside power planes (VBPPs) each comprising a horizontal portion directly connected to one transistor of a plurality of first transistors;
a second power plane; and
a plurality of pass through vias electrically connecting the second power plane to a second plurality of entirely metalized VBPPs, wherein the plurality of pass through vias pass through the first power plane and each VBPP comprises a horizontal portion directly connected to one transistor of a plurality of second transistors.
2. The semiconductor structure of claim 1 , further comprising a dielectric plane between the first power plane and the second power plane.
3. The semiconductor structure of claim 2 , wherein the first power plane contacts a first side of the dielectric plane and the second power plane contacts a second side of the dielectric plane.
4. The semiconductor structure of claim 1 , further comprising a spacer between the pass through via and the first power plane.
5. The semiconductor structure of claim 1 , wherein the first power plane is configured to supply a V DD signal and the second power plane is configured to supply a V SS signal.
6. The semiconductor structure of claim 1 , wherein the first plurality of VBPPs comprise a first height, the second plurality of VBPPs comprise a second height that is less than the first height.
7. The semiconductor structure of claim 1 , further comprising:
a first transistor device comprising a first type of semiconductor connected to one of the first plurality of VBPPs; and
a second transistor device comprising a second type of semiconductor different from the first type of semiconductor connected to one of the second plurality of VBPPs.
8. A semiconductor structure, comprising:
a first transistor device of a first semiconductor type;
a second transistor device of a second semiconductor type;
a first power plane electrically connected to the first transistor device by a first entirely metalized via-to-backside power plane (VBPP), wherein the first VBPP is directly connected to the first power plane and comprises a horizontal portion directly connected to the first transistor; and
a second power plane electrically connected to the second transistor device by a second entirely metalized VBPP directly connected to a pass through via that passes through the first power plane and comprises a horizontal portion directly connected to the second transistor.
9. The semiconductor structure of claim 8 , further comprising a spacer between the pass through via and the first power plane.
10. The semiconductor structure of claim 8 , further comprising a dielectric plane between the first power plane and the second power plane.
11. The semiconductor structure of claim 10 , wherein the first power plane contacts a first side of the dielectric plane and the second power plane contacts a second side of the dielectric plane.
12. The semiconductor structure of claim 8 , wherein the first power plane and the second power plane are formed on a backside of the semiconductor structure.
13. The semiconductor structure of claim 8 , wherein the first power plane is configured to supply a V DD signal and the second power plane is configured to supply a V SS signal.
14. The semiconductor structure of claim 8 ,
wherein the first VBPP comprises a first height and
the second VBPP comprises a second height that is less than the first height.