Resonant tunneling diodes and manufacturing methods thereof
The present disclosure provides a resonant tunneling diode including: a first barrier layer; a second barrier layer; a potential well layer between the first barrier layer and the second barrier layer, materials of the first barrier layer, the second barrier layer, and the potential well layer including a group III nitride, a material of the potential well layer including a gallium element; a first barrier layer between the first barrier layer and the potential well layer; and/or a second barrier layer between the second barrier layer and the potential well layer.
1. A resonant tunneling diode, comprising:
a first barrier layer;
a second barrier layer;
a potential well layer between the first barrier layer and the second barrier layer;
a collector electrode;
an emitter electrode, the collector electrode close to the first barrier layer, the emitter electrode close to the second barrier layer;
a third isolation layer entirely between the collector electrode and the first barrier layer;
wherein a material of the first barrier layer, a material of the second barrier layer, and a material of the potential well layer all comprise a group III nitride, a material of the third isolation layer comprises AlN, and the material of the potential well layer comprises a gallium element; and
a first isolation layer between the first barrier layer and the potential well layer.
2. The resonant tunneling diode of claim 1 , wherein the material of the first barrier layer and the material of the second barrier layer comprise at least one of AlGaN, AlInGaN, or InAlN, and a structure of one or more of the first barrier layer or the second barrier layer is a stacked structure with two layers.
3. The resonant tunneling diode of claim 1 , wherein a material of the first isolation layer comprises AlN.
4. The resonant tunneling diode of claim 1 , wherein a thickness of the first isolation layer ranges from 0.1 nm to 2 nm.
5. The resonant tunneling diode of claim 1 , further comprising:
a second isolation layer between the second barrier layer and the potential well layer;
wherein a material of the second isolation layer comprises AlN, and a thickness of the second isolation layer ranges from 0.1 nm to 2 nm.
6. The resonant tunneling diode of claim 1 , wherein a material of the collector electrode and a material of the emitter electrode comprise a GaN-based material.
7. The resonant tunneling diode of claim 1 , further comprising:
a fourth isolation layer between the emitter electrode and the second barrier layer, a material of the fourth isolation layer comprising AlN.
8. The resonant tunneling diode of claim 2 , wherein the stacked structure with the two layers comprises one of: an AlGaN layer and an AlInGaN layer, an AlInGaN layer and an AlGaN layer, an InAlN layer and an AlInGaN layer, or an AlInGaN layer and an InAlN layer that are arranged from bottom to top.
9. The resonant tunneling diode of claim 2 , wherein the structure of the one or more of the first barrier layer or the second barrier layer is the stacked structure with three layers, where materials of two layers that are adjacent to each other in the stacked structure are different.
10. A resonant tunneling diode, comprising:
a first barrier layer;
a second barrier layer;
a potential well layer between the first barrier layer and the second barrier layer;
a collector electrode;
an emitter electrode, the collector electrode close to the first barrier layer, the emitter electrode close to the second barrier layer;
a fourth isolation layer entirely between the emitter electrode and the second barrier layer;
wherein a material of the first barrier layer, a material of the second barrier layer, and a material of the potential well layer all comprise a group III nitride, a material of the fourth isolation layer comprises AlN, and the material of the potential well layer comprises a gallium element; and
a first isolation layer between the first barrier layer and the potential well layer.