Interconnect structure and methods of forming the same
An interconnect structure and methods of forming the same are described. In some embodiments, the structure includes a first intermetal dielectric (IMD) layer disposed over a plurality of conductive features and a first passive component disposed on the first IMD layer in a first region of the substrate. The structure further includes a second passive component disposed on the first IMD layer in a second region of the substrate. The second passive component includes a first conductive layer, and the first conductive layer has a first thickness. The structure further includes a second IMD layer disposed on the first passive component in the first region and on the second passive component and a portion of the first IMD layer in the second region. The second IMD layer has a second thickness ranging from about five times to about 20 times the first thickness.
1. A method, comprising:
forming a first intermetal dielectric (IMD) layer over a plurality of conductive features;
forming a first passive component over the first IMD layer, comprising:
forming a first conductive layer over the first IMD layer;
forming a first insulating layer on the first conductive layer;
forming a second conductive layer on the first insulating layer;
forming a second insulating layer on the second conductive layer; and
forming a third conductive layer on the second insulating layer;
forming a second passive component over the first IMD layer, comprising:
forming a fourth conductive layer over the first IMD layer, wherein the fourth conductive layer is formed at the same time as the first, second, or third conductive layer; and
forming a second IMD layer on the first and second passive components.
2. The method of claim 1 , further comprising forming a mask on the fourth conductive layer prior to forming the first insulating layer.
3. The method of claim 1 , wherein the first insulating layer is formed on both the first conductive layer and the fourth conductive layer.
4. The method of claim 1 , wherein the fourth conductive layer is formed at the same time as the first conductive layer.
5. The method of claim 4 , wherein forming the first and fourth conductive layers comprise depositing a conductive layer and patterning the conductive layer.
6. The method of claim 1 , further comprising forming first and second conductive features through the fourth conductive layer.
7. The method of claim 6 , further comprising forming a third conductive feature through the first and third conductive layers.
8. The method of claim 7 , further comprising forming a fourth conductive feature through the second conductive layer.
9. The method of claim 1 , further comprising:
depositing a mask on the fourth conductive layer, wherein the mask covers a side surface of the fourth conductive layer.
10. The method of claim 9 , wherein the second IMD layer covers a side surface of the third conductive layer and a side surface of the fourth conductive layer.
11. The method of claim 9 , wherein the fourth conductive layer has a first thickness, and the second IMD layer has a second thickness that is about five times to about twenty times the first thickness.
12. The method of claim 9 , further comprising forming a first conductive feature through the first insulating layer, the second insulating layer, and the second conductive layer.
13. The method of claim 12 , further comprising forming a second conductive feature through the first insulating layer, the second insulating layer, the first conductive layer, and the third conductive layer.
14. The method of claim 13 , further comprising forming third and fourth conductive features through the fourth conductive layer.
15. The method of claim 1 , wherein the fourth conductive layer is formed at the same time as the second conductive layer.
16. The method of claim 15 , wherein forming the second and fourth conductive layers comprise depositing a conductive layer and patterning the conductive layer.
17. The method of claim 1 , wherein the fourth conductive layer is formed at the same time as the third conductive layer.
18. The method of claim 17 , wherein forming the third and fourth conductive layers comprise depositing a conductive layer and patterning the conductive layer.
19. A method, comprising:
forming a first intermetal dielectric (IMD) layer over a plurality of conductive features;
forming a first passive component over the first IMD layer, comprising:
forming a first conductive layer over the first IMD layer;
forming a first insulating layer on the first conductive layer;
forming a second conductive layer on the first insulating layer;
forming a second insulating layer on the second conductive layer; and
forming a third conductive layer on the second insulating layer;
forming a second passive component over the first IMD layer, comprising:
forming a fourth conductive layer over the first IMD layer, wherein the fourth conductive layer is formed at the same time as the first, second, or third conductive layer; and
forming a second IMD layer on the first and second passive components, wherein the second IMD layer covers a side surface of the third conductive layer and a side surface of the fourth conductive layer.
20. A method, comprising:
forming a first intermetal dielectric (IMD) layer over a plurality of conductive features;
forming a first passive component over the first IMD layer, comprising:
forming a first conductive layer over the first IMD layer;
forming a first insulating layer on the first conductive layer;
forming a second conductive layer on the first insulating layer;
forming a second insulating layer on the second conductive layer; and
forming a third conductive layer on the second insulating layer;
forming a second passive component over the first IMD layer, comprising:
forming a fourth conductive layer over the first IMD layer, wherein the fourth conductive layer is formed at the same time as the first, second, or third conductive layer; and
forming a second IMD layer on the first and second passive components, wherein the second IMD layer is deposited on the second insulating layer.