Semiconductor structure including a plurality of semicondcutor pillars and bit line isolation trenches and method for forming same
A method for forming a semiconductor structure includes: providing a semiconductor substrate including a plurality of first semiconductor pillars and bit line isolation trenches arranged at intervals in a first direction; in which the bit line isolation trenches extend in a second direction, the first direction being perpendicular to the second direction; forming a bit line isolation layer in a bit line isolation trench; in which a gap is provided between the bit line isolation layer and the bit line isolation trench, in which the gap is located at a bottom corner of the bit line isolation trench and extends in the second direction, and exposes part of the bottom of the bit line isolation trench; etching a first semiconductor pillar in the first direction through the gap to form a bit line trench; forming a bit line in the bit line trench.
1. A method for forming a semiconductor device, comprising:
providing a semiconductor substrate comprising a plurality of first semiconductor pillars and bit line isolation trenches arranged at intervals in a first direction; wherein the bit line isolation trenches extend in a second direction, and the first direction is perpendicular to the second direction;
forming a bit line isolation layer in at least one of the bit line isolation trenches; wherein a gap is provided between the bit line isolation layer and the at least one of the bit line isolation trenches, wherein the gap is located at a bottom corner of the at least one of the bit line isolation trenches and extends in the second direction, and the gap exposes part of a bottom of the at least one of the bit line isolation trenches;
etching at least one of the first semiconductor pillars in the first direction through the gap to form the one of the at least a bit line trenches; and
forming a bit line in the at least one of the bit line trenches;
wherein forming the bit line isolation layer in at least one of the bit line isolation trenches comprises:
forming an initial bit line isolation layer in at least one of the bit line isolation trenches; and
removing part of the initial bit line isolation layer to form the bit line isolation layer and the gap;
wherein forming the initial bit line isolation layer in at least one of the bit line isolation trenches comprises:
forming a first initial isolation layer and a second initial isolation layer in sequence in at least one of the bit line isolation trenches;
removing part of the second initial isolation layer and part of the first initial isolation layer in sequence by etching in a third direction to form a first etching groove; wherein the first etching groove exposes a first sidewall of at least one of the bit line isolation trenches and another part of the bottom of at least one of the bit line isolation trenches; and the third direction is a depth direction of at least one of the bit line isolation trenches; and
filling an isolation material in the first etching groove to form a third initial isolation layer,
wherein remaining first initial isolation layer, remaining second initial isolation layer and the third initial isolation layer constitute the initial bit line isolation layer.
2. The method of claim 1 , wherein
removing the part of the initial bit line isolation layer to form the bit line isolation layer and the gap comprises:
etching the remaining second initial isolation layer and the remaining first initial isolation layer in sequence in the third direction at an end of the bit line isolation trench to form at least one opening; and
removing a further remaining first initial isolation layer of the initial bit line isolation layer through the opening to form the bit line isolation layer and the gap.
3. The method of claim 2 , wherein
etching the first semiconductor pillar in the first direction through the gap to form the bit line trench comprises:
partially etching the first semiconductor pillar in the first direction through the gap to form a second etching groove; wherein a dimension of the second etching groove in the third direction is equal to a dimension of the gap in the third direction, and a dimension of the second etching groove in the first direction is smaller than a dimension of the first semiconductor pillar in the first direction;
the second etching groove and the gap jointly constitute the bit line trench.
4. The method of claim 2 , wherein
etching the first semiconductor pillar in the first direction through the gap to form the bit line trench comprises:
fully etching the first semiconductor pillar in the first direction through the gap to form a third etching groove; wherein a dimension of the third etching groove in the third direction is equal to a dimension of the gap in the third direction, and a dimension of the third etching groove in the first direction is equal to a dimension of the first semiconductor pillar in the first direction;
the third etching groove and the gap jointly constitute the bit line trench.
5. The method of claim 3 , further comprising:
before forming the bit line,
etching a further remaining second initial isolation layer in the third direction to form a fourth etching groove; wherein the fourth etching groove expose the gap and a second sidewall of the bit line isolation trench; and
forming the bit line in the bit line trench through the fourth etching groove.
6. The method of claim 5 , wherein
forming the bit line in the bit line trench through the fourth etching groove comprises:
forming an initial bit line layer in the fourth etching groove and the bit line trench; and
etching back the initial bit line layer to remove the initial bit line layer located in the fourth etching groove to form the bit line.
7. The method of claim 6 , further comprising:
after forming the bit line,
filling an insulating material in the fourth etching groove to form an insulating layer;
wherein a top surface of the insulating layer is flush with a top surface of the third initial isolation layer.
8. The method of claim 7 , further comprising:
after forming the insulating layer,
forming a plurality of word line trenches in the first semiconductor pillars, wherein the word line trenches extend in the first direction; and
forming word lines in the word line trenches.
9. The method of claim 8 , wherein
forming the plurality of word line trenches in the first semiconductor pillars comprises:
etching the first semiconductor pillars in the third direction to form a plurality of word line trenches and second semiconductor pillars arranged at intervals in the second direction;
wherein a bottom of a word line trench is above a top of the bit line.
10. The method of claim 9 , wherein forming the word lines in the word line trenches comprises:
forming gate insulating layers on sidewalls of a word line trench;
forming a bottom initial barrier layer, an initial word line layer and a top initial barrier layer in sequence in the word line trench with the gate insulating layers formed; and
etching part of the top initial barrier layer, part of the initial word line layer and part of the bottom initial barrier layer in sequence in the third direction to form a word line isolation trench located at a center of the word line trench, remaining initial word line layer constituting a word line;
wherein a part of the bottom initial barrier layer is remained at a bottom of the word line isolation trench.
11. The method of claim 10 , further comprising: after forming the word lines, filling an insulating material in the word line isolation trench to form a word line isolation layer.