Vertically stacked fin semiconductor devices
Semiconductor devices and methods of forming the same include forming a first dielectric layer around a semiconductor fin, formed from a first dielectric material, to a target height lower than a height of the semiconductor fin. A second dielectric layer is deposited on the first dielectric layer and is formed from a second dielectric material. A third dielectric layer, formed from the first dielectric material, is formed on the second dielectric layer. The second dielectric layer is etched away to expose a gap on the semiconductor fin. A portion of the semiconductor fin that is exposed in the gap is oxidized to form an isolation layer.
1. A semiconductor device, comprising:
a bottom fin formed from a first semiconductor material;
a top fin formed from the first semiconductor material;
an isolation layer formed from an oxide of the first semiconductor material, directly between the bottom fin and the top fin, including a top portion and a bottom portion each having a first horizontal thickness in a first direction, and a middle portion, between the top portion and the bottom portion, having a second horizontal thickness in the first direction that is greater than the first horizontal thickness; and
a dielectric layer over and around the top fin, the bottom fin, and the isolation layer, formed from a dielectric material different from the oxide of the first semiconductor material.
2. The semiconductor device of claim 1 , wherein the isolation layer has a cross-shaped cross-section.
3. The semiconductor device of claim 1 , wherein a height of the top fin and a height of the bottom fin are unequal to one another.
4. The semiconductor device of claim 1 , wherein a height of the top fin and a height of the bottom fin are equal to one another.
5. The semiconductor device of claim 1 , wherein the top fin, the bottom fin, and the isolation layer are formed from a continuous semiconductor structure.