Granted Patent B2

US 12,427,548 · App. 17/555,513 · Granted Sep 30, 2025

Inventors: Shih-Jie Lin (Fujian, CN); Ching-Wen Teng (Singapore, SG); Kuo Liang Huang (Singapore, SG); Wen Yi Tan (Fujian, CN)

Assignee: United Semiconductor (Xiamen) Co., Ltd.

B08B3/02B05B7/0483B24B7/228B24B57/02H01L21/3212

Abstract

Claims (18)

1. A cleaning process for a wafer polishing pad, comprising:

providing a wafer polishing pad;

performing a planarization step on a wafer by using the wafer polishing pad, and leaving a residue on the wafer polishing pad after the planarization step; and

performing a cleaning step with a cleaning nozzle to remove the residue, wherein the cleaning nozzle comprises at least one Y-shaped pipe, one end of the Y-shaped pipe is a water outlet of a plurality of water outlets, and the other two ends of the Y-shaped pipe are respectively a water inlet and an air inlet, wherein cleaning liquid flows from the water inlet to the plurality of water outlets and a pressurized gas flows in from the air inlet, the air inlet is disposed above the water inlet, and the water inlet is arranged in a horizontal direction at a junction of the water inlet and the air inlet, and the plurality of water outlets are arranged in a downward direction.

2. The cleaning process for the wafer polishing pad according to claim 1 , wherein the cleaning liquid comprises deionized water.

3. The cleaning process for the wafer polishing pad according to claim 1 , wherein the pressurized gas is introduced from the air inlet and increases the pressure of the cleaning liquid sprayed from the water outlet.

4. The cleaning process for the wafer polishing pad according to claim 3 , wherein the pressurized gas comprises an inert gas.

5. The cleaning process for the wafer polishing pad according to claim 3 , wherein when the pressurized gas is not introduced from the air inlet, the pressure of the cleaning liquid at the water outlet is between 40 psi and 50 psi.

6. The cleaning process for the wafer polishing pad according to claim 3 , wherein when the pressurized gas is introduced from the air inlet, the pressure of the cleaning liquid at the water outlet is between 80 psi and 100 psi.

7. The cleaning process for the wafer polishing pad according to claim 1 , wherein the pressurized gas is introduced from the air inlet in a pulsed manner.

8. The cleaning process for the wafer polishing pad according to claim 1 , wherein a pipe diameter of the air inlet is smaller than a pipe diameter of the water inlet and the water outlet.

9. The cleaning process for the wafer polishing pad according to claim 1 , wherein the cleaning nozzle and the wafer polishing pad are integrated in a same polishing machine.

10. A cleaning nozzle comprising:

at least one Y-shaped pipe, wherein one end of the Y-shaped pipe is water outlet of a plurality of water outlets, and the other two ends are a water inlet and an air inlet respectively, wherein the cleaning nozzle is configured to have a cleaning liquid flows from the water inlet to the plurality of water outlets, and a pressurized gas flows in from the air inlet to strengthen the pressure of the cleaning liquid sprayed from the water outlet, the air inlet is disposed above the water inlet, and the water inlet is arranged in a horizontal direction at a junction of the water inlet and the air inlet, and the plurality of water outlets are arranged in a downward direction.

11. The cleaning nozzle according to claim 10 , wherein the cleaning liquid comprises deionized water.

12. The cleaning nozzle according to claim 10 , wherein the pressurized gas comprises an inert gas.

13. The cleaning nozzle according to claim 10 , wherein a pipe diameter of the air inlet is smaller than a pipe diameter of the water inlet and a pipe diameter of the water outlet.

14. The cleaning nozzle according to claim 10 , wherein the cleaning nozzle is integrated in a polishing machine.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (10)