IP Library Granted Patent US 12,427,618
Granted Patent B2
US 12,427,618 · App. 17/453,302 · Granted Sep 30, 2025

Chemical-mechanical planarization pad and methods of use

Inventors: Te-Chien Hou (Kaohsiung, TW); Chih Hung Chen (Hsinchu, TW); Shich-Chang Suen (Hsinchu, TW); Liang-Guang Chen (Hsinchu, TW); Wen-Pin Liao (Hsinchu, TW); Kei-Wei Chen (Tainan, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
B24B37/26H01L21/30625H01L21/3212
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,427,618
App. No.
17/453,302
Granted
Sep 30, 2025
Kind
B2
Abstract

Some implementations described herein relate to dispensing a slurry onto a polishing pad for a chemical-mechanical planarization (CMP) process. These implementations also involve rotating the polishing pad while the slurry is dispensed onto the polishing pad. Rotation of the polishing pad results in a traversal of the slurry radially outward toward a polishing pad outer edge of the polishing pad. The polishing pad includes a plurality of groove segments and a geometric patterns formed by the plurality of the groove segments impede the flow of the slurry to the polishing pad outer edge.

Claims (55)

1. A method, comprising:

dispensing a slurry onto a polishing pad for a chemical-mechanical planarization (CMP) process; and

rotating the polishing pad while the slurry is dispensed onto the polishing pad,

wherein rotation of the polishing pad results in a traversal of the slurry radially outward toward a polishing pad outer edge of the polishing pad, and

wherein the polishing pad includes:

a first concentric groove segment,

a second concentric groove segment located between the first concentric groove segment and the polishing pad outer edge,

a third concentric groove segment located between the second concentric groove segment and the polishing pad outer edge,

a first plurality of radial groove segments extending between the first concentric groove segment and the second concentric groove segment, and

a second plurality of radial groove segments extending between the second concentric groove segment and the third concentric groove segment,

wherein the first plurality of radial groove segments are radially staggered from the second plurality of radial groove segments, and

wherein at least one of a first radial groove segment, of the first plurality of radial groove segments, or a second radial groove segment, of the second plurality of radial groove segments, includes groove segment sidewalls that each includes a step separating an upper groove segment portion, adjacent to a polishing surface of the polishing pad, and a lower groove segment portion, exposing a pad base of the polishing pad,

 wherein the lower groove segment portion is offset from the upper groove segment portion, and

 wherein a width of the upper groove segment portion is less than a width of the lower groove segment portion.

2. The method of claim 1 , wherein the first plurality of radial groove segments being radially staggered from the second plurality of radially groove segments provides resistance to the traversal of the slurry radially outward toward the polishing pad outer edge.

3. The method of claim 1 , wherein the polishing pad further includes:

a third plurality of radial groove segments extending between the third concentric groove segment and the polishing pad outer edge.

4. The method of claim 1 , wherein at least one of the first plurality of radial groove segments or the second plurality of radial groove segments includes straight-line groove segments.

5. The method of claim 1 , wherein at least one of the first plurality of radial groove segments or the second plurality of radial groove segments include curved-line groove segments.

6. The method of claim 1 , wherein the groove segment sidewalls include an angled top edge between the groove segment sidewalls and the polishing surface.

7. The method of claim 6 , wherein the angled top edge is in a range of 0 degrees to 5 degrees.

8. The method of claim 1 , wherein:

the first plurality of radial groove segments are equally spaced from each other between the first concentric groove segment and the second concentric groove segment,

the second plurality of radial groove segments are equally spaced from each other between the second concentric groove segment and the third concentric groove segment, and

a quantity of the first plurality of radial groove segments is different than a quantity of the second plurality of radial groove segments.

9. A method, comprising:

dispensing a slurry onto a polishing pad for a chemical-mechanical planarization (CMP) process; and

rotating the polishing pad while the slurry is dispensed onto the polishing pad,

wherein rotation of the polishing pad results in the slurry traversing the polishing pad radially outward toward a polishing pad outer edge, and

wherein the polishing pad includes a plurality of groove segments, offset from a center of the polishing pad, comprising segments joining to form a repeating pattern of polygons in portions of the polishing pad between the plurality of groove segments,

wherein at least one of the segments of the plurality of groove segments includes groove segment sidewalls that each includes a step separating an upper groove segment portion, adjacent to a polishing surface of the polishing pad, and a lower groove segment portion, exposing a pad base of the polishing pad,

wherein the lower groove segment portion is offset from the upper groove segment portion, and

wherein a width of the upper groove segment portion is less than a width of the lower groove segment portion.

10. The method of claim 9 , wherein the repeating pattern of polygons includes a repeating pattern of triangles.

11. The method of claim 9 , wherein the plurality of groove segments are angularly offset from a radius of the polishing pad to impede radial flow of the slurry on the polishing pad.

12. The method of claim 9 , wherein one polygon of the repeating pattern of polygons encompasses the center of the polishing pad.

13. The method of claim 9 , wherein the groove segment sidewalls include an angled top edge between the groove segment sidewalls and the polishing surface.

14. A polishing pad, comprising:

a pad base; and

a groove layer, configured to receive slurry for performing a chemical-mechanical planarization (CMP) process, including a groove region, located between a center and a polishing pad outer edge of the polishing pad, including a plurality of groove segments that are non-linear along a radius of the polishing pad,

wherein at least one of the plurality of groove segments includes groove segment sidewalls that each includes a step separating an upper groove segment portion, adjacent to a polishing surface of the polishing pad, and a lower groove segment portion, exposing a pad base of the polishing pad,

wherein a width of the upper groove segment portion is less than a width of the lower groove segment portion, and

wherein the lower groove segment portion is perpendicular to the polishing surface.

15. The polishing pad of claim 14 , wherein the plurality of groove segments comprises:

a first concentric groove segment located between the center of the polishing pad and the polishing pad outer edge;

a second concentric groove segment located between the first concentric groove segment and the polishing pad outer edge;

a third concentric groove segment located between the second concentric groove segment and the polishing pad outer edge;

a first plurality of radial groove segments extending between the first concentric groove segment and the second concentric groove segment; and

a second plurality of radial groove segments extending between the second concentric groove segment and the third concentric groove segment,

wherein the first plurality of radial groove segments are radially staggered from the second plurality of radial groove segments.

16. The polishing pad of claim 15 , wherein each of the first concentric groove segment, the second concentric groove segment, and the third concentric groove segment includes the groove segment sidewalls.

17. The polishing pad of claim 15 , wherein each of the first plurality of radial groove segments and the second plurality of radial groove segments includes the groove segment sidewalls.

18. The polishing pad of claim 14 , wherein at least a subset of the plurality of groove segments forms a repeating pattern of polygons on at least a portion of the polishing pad.

19. The polishing pad of claim 14 , wherein the groove segment sidewalls include an angled top edge between the groove segment sidewalls and the polishing surface.

20. The polishing pad of claim 19 , wherein the angled top edge is in a range of 0 degrees to 5 degrees.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 3, 2021
From: HOU, TE-CHIEN; CHEN, CHIH HUNG; SUEN, SHICH-CHANG; CHEN, LIANG-GUANG; LIAO, WEN-PIN; CHEN, KEI-WEI
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 058006/0569 →
Continuity (2)
Provisional Application 63222676 · Jul 16, 2021
Related Publication 20230021149A1 · Jan 19, 2023
References Cited (10)
US 5882251A · Berman · 1999 [cited by examiner]
US 7070480B2 · Moon · 2006 [cited by examiner]
US 8870626B2 · Wang · 2014 [cited by examiner]
US 10201887B2 · Chen · 2019 [cited by examiner]
US 11534888B2 · Yun · 2022 [cited by examiner]
US 11813714B2 · Kim · 2023 [cited by examiner]
US 20200061773A1 · Kojima · 2020 [cited by examiner]
US 20220226962A1 · Kato · 2022 [cited by examiner]
WO WO2006003697A1 · 2006 [cited by examiner]
Machine translation of WO-2006003697-A1 (Year: 2006). [cited by examiner]