Polishing composition and method of polishing silicon wafer
A polishing composition is provided that can reduce micro-defects on a semiconductor wafer after polishing. A polishing composition includes: an abrasive; a basic compound; a wetting agent; and a non-ionic surfactant, where the surface tension Y ud is not higher than 64 mN/m, and the ratio of the surface tension after dilution with water by a factor of 20, Y d , to the surface tension Y ud , denoted by Y d /Y ud , is not lower than 1.10 and not higher than 1.40. Here, the surface tensions Y ud and Y d are measurements at 25° C.
1. A polishing composition comprising:
an abrasive;
a basic compound;
a wetting agent; and
a non-ionic surfactant,
wherein a surface tension γ ud is not higher than 64 mN/m, and
a ratio of a surface tension after dilution with water by a factor of 20, γ d , to the surface tension γ ud , denoted by γ d /γ ud , is not lower than 1.10 and not higher than 1.40,
where the surface tensions γ d and γ ud are measurements at 25° C.
2. The polishing composition according to claim 1 , wherein the wetting agent is one or more selected from the group consisting of a cellulose derivative, a polysaccharide, and a vinyl polymer.
3. The polishing composition according to claim 1 , wherein the basic compound is one or more selected from the group consisting of an alkali metal hydroxide, an alkali metal salt, ammonia, an ammonium salt, and a quaternary ammonium hydroxide.
4. The polishing composition according to claim 1 , wherein the polishing composition is diluted by a factor of 5 to 100 prior to use.
5. The polishing composition according to claim 1 , wherein the polishing composition is used to polish a silicon wafer.
6. A method of polishing a silicon wafer, comprising:
polishing a silicon wafer using the polishing composition according to claim 1 .