Semiconductor device with a bond pad and a sandwich passivation layer and manufacturing method thereof
A method of forming a sandwich passivation layer ( 405 ) on a semiconductor device ( 400 ) comprising a bond pad ( 404 ) is provided. The method comprises forming a first layer ( 406 ) over a surface of the semiconductor device ( 400 ), removing a part of the first layer ( 406 ) to expose a surface of the bond pad ( 404 ), forming a second layer ( 407 ) over the first layer ( 406 ) and the surface of the bond pad ( 404 ), and forming a third layer ( 408 ) over the second layer ( 407 ), wherein the surface of the bond pad ( 404 ) is not in contact with the first layer ( 406 ) or third layer ( 408 ).
1. A method of forming a sandwich passivation layer on a semiconductor device comprising a bond pad, the method comprising:
forming a first layer over a surface of the semiconductor device and over a top surface of the bond pad;
removing a part of the first layer to expose the top surface of the bond pad;
forming a second layer over the first layer and the top surface of the bond pad; and
forming a third layer over the second layer;
wherein the top surface of the bond pad is not in contact with the first layer or third layer, and wherein a wettability of the first layer and third layer is higher than a wettability of the second layer.
2. The method according to claim 1 wherein forming the first layer comprises forming the first layer on an initial layer formed on the semiconductor device, wherein removing the part of the first layer further comprises removing a part of the initial layer to expose the top surface of the bond pad, and wherein the top surface of the bond pad is not in contact with the initial layer.
3. The method according to claim 1 further comprising removing a part of the third layer and second layer to expose the top surface of the bond pad.
4. The method according to claim 1 wherein the first layer and third layer are formed from plasma-enhanced TEOS (PETEOS).
5. The method according to claim 1 wherein the second layer is formed from plasma enhanced oxide (PEOX).
6. The method according to claim 1 wherein the semiconductor device is an optical device.
7. The method according to claim 1 wherein the third layer is formed at a deposit rate of 500 A/min or below.
8. The method according to claim 1 wherein the first layer, the second layer, and the third layer are formed using same equipment.
9. A semiconductor device comprising:
a bond pad; and
a sandwich passivation layer comprising:
a first layer on a surface of the semiconductor device, wherein the first layer is formed on an initial layer formed on the semiconductor device;
a second layer on the first layer and on a top surface of the bond pad; and
a third layer on the second layer;
wherein the top surface of the bond pad is not in contact with the initial layer, first layer, or third layer, and wherein a wettability of the first layer and third layer is higher than a wettability of the second layer.
10. The semiconductor device according to claim 9 wherein the first layer and third layer are formed from plasma-enhanced TEOS (PETEOS).
11. The semiconductor device according to claim 9 wherein the second layer is formed from plasma enhanced oxide (PEOX).
12. The semiconductor device according to claim 9 wherein the semiconductor device is an optical device.
13. The semiconductor device according to claim 9 wherein the third layer is formed at a deposit rate of 500 A/min or below.
14. The semiconductor device according to claim 9 wherein the first layer, the second layer, and the third layer are formed using same equipment.