US 6352469B1
· Miyazaki et al.
· 2002
[cited by applicant]
US 7678700B2
· Desai et al.
· 2010
[cited by applicant]
US 7998866B2
· White et al.
· 2011
[cited by applicant]
US 9368367B2
· Singh et al.
· 2016
[cited by applicant]
US 20010044265A1
· Kim et al.
· 2001
[cited by applicant]
US 20060249482A1
· Wrschka et al.
· 2006
[cited by applicant]
US 20080153293A1
· Desai et al.
· 2008
[cited by applicant]
US 20090130849A1
· Lee
· 2009
[cited by applicant]
US 20120094487A1
· Kranz et al.
· 2012
[cited by applicant]
CN 106189872A
· 2016
[cited by applicant]
TW 202112989A
· 2021
[cited by applicant]
Yuan, et al. “Environment-Friendly Chemical Mechanical Polishing Slurry for SiC Wafer” Materials Science Forum, vol. 874, pp. 415-419, Oct. 3, 2016.
[cited by applicant]
Narushima, et al. “High-Temperature Oxidation of Silicon Carbide and Silicon Nitride” Materials Transactions, vol. 38, No. 10, pp. 821-835, 1997.
[cited by applicant]
Lee, et al. “Hybrid polishing mechanism of single crystal SiC using mixed-abrasive slurry (Mas)” CIRP Annals—Manufacturing Technology 59, pp. 333-336, 2010.
[cited by applicant]
Okamoto, et al. “Improvement of Remval Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid” Japanese Journal of Applied Physics 51, 2012, 5 pages.
[cited by applicant]
Bondokov, et al. “Influence of Structural Defects on the Polishing of Silison Carbide Single Crystal Wafers” Japanese Journal of Applied Physics, vol. 43, No. 1, pp. 43-49, 2004.
[cited by applicant]
Chen, Zhaojie and Yonghua Zhao, “Investigation into electrochemical oxidation behavior of 4H-SiC with varying anodizing conditions” Electrochemistry Communications 109, Nov. 14, 2019, 9 pages.
[cited by applicant]
Yuan, et al. “UV-TiO2 photocatalysis assisted chemical mechanical polishing 4H-SiC wafer” Materials and Manufacturing Processes, vol. 33, Iss. 11, Aug. 30, 2017. https://www.tandfonline.com/doi/full/10.1080/10426914.201…
[cited by applicant]
Shen, et al. “Ultrasmooth reaction-sintered silicon carbide surface resulting from combination of thermal oxidation and ceria slurry polishing” Optics Express, vol. 21, No. 12, Jun. 13, 2013, 9 pages.
[cited by applicant]
Yagi et al. “Catalyst-referred etching of 4H-SiC substrate utilizing hydroxyl radicals generated from hydrogen peroxide molecules” Surface and Interface Analysis, 2008, 40, pp. 998-1001.
[cited by applicant]
Liang, et al. “Catalysts based on Fenton reaction for SiC wafer in chemical magnetorheological finishing” AIMS Materials Science, 5(6), pp. 1112-1123, Nov. 15, 2018.
[cited by applicant]
Kurokawa, et al. “Characteristics in SiC-CMP using MnO2 slurry with Strong Oxidant under Different Atmospheric Conditions” Mater. Res. Soc. Symp. Proc. vol. 1560, 2013, 9 pages.
[cited by applicant]
Shi, et al. “Characterization of colloidal silica abrasives with different sizes and their chemical-mechanical polishing performance on 4H-SiC (0001)” Applied Surface Science 307, pp. 414-417, Apr. 15, 2014.
[cited by applicant]
Lei, et al. “Comparison of Fe Catalyst Species in Chemical Mechanical Polishing Based on Fenton Reacton for SiC Wafer” Advanced Materials Research vol. 1027, pp. 171-176, Oct. 17, 2014.
[cited by applicant]
Deng, et al. “Competition between surface modifcation and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001)” Scientific Reports, 5, 8947, Mar. 10, 2015, 6 pages.
[cited by applicant]
An, et al. “Effect of Process Parameters on Material removal Rate in Chemical Mechanical Polishing of 6H-SiC (0001)” Materials Science Forum vols. 600-603, pp. 831-834, Sep. 26, 2008.
[cited by applicant]
Lagudu, Uma Rames Krishna and S.V. Babu, “Effect of Transition Metal Compounds on Amorphous SiC Removal Rates” ECS Journal of Solid State Science and Technology, 3 (6), pp. 219-225, May 15, 2014.
[cited by applicant]
Neslen, et al. “Effects of Process Parameter Variations on the Removal Rate in Chemical Mechanical Polishing of 4H-SiC” Journal of Electronic Materials, vol. 30, No. 10, pp. 1271-1275, 2001.
[cited by applicant]
Jorgensen, et al. “Effects of Water Vapor on Oxidation of Silicon Carbide” Journal of The American Ceramic Society, vol. 44, No. 6, pp. 258-261, Jun. 1961.
[cited by applicant]
International Search Report and Written Opinion in PCT/US2022/028536 mailed on Jul. 28, 2022, 12 process.
[cited by applicant]
Zhou, et al. “Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nano particles in slurry” Surface & Coatings Technology, vol. 251, pp. 48-55, Jul. 25, 2014.
[cited by applicant]
Tsai, et al. “Investigation of increased removal rate during polishing of single-crystal silicon carbide” Int. J Adv Manuf Technol, Apr. 22, 2015, 10 pages.
[cited by applicant]
Ho, et al. “Investigation of Polishing Pads Impregnated with Fe and Al2O3 Particles for Single-Cyrstal Silicon Carbide Wafers” Applied Sciences 6, 89, 2016, 8 pages.
[cited by applicant]
Hara, et al. “Novel Abrasive-Free Planarization of 4H-SiC (0001) Using Catalyst” Journal of Electronic Materials vol. 35, No. 8, pp. L11-L14, 2006.
[cited by applicant]
Gao, et al. “Novel polystyrene/CeO2-TiO2 multicomponent core/shell abrasives for high-efficiency and high-quality photocatalytic-assisted chemical mechanical polishing of reaction-bonded silicon carbide” Applied Surface…
[cited by applicant]
Chen, et al. “Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC subtrates” Applied Surface Science 359, pp. 664-668, Oct. 26, 2015.
[cited by applicant]
Kubota, et al. “Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution” Precision Engineering 36, pp. 137-140, Sep. 16, 2011.
[cited by applicant]
Kara, Hudai and Steve G. Roberts “Polishing Behavior and Surface Quality of Alumina and Alumina/Silison Carbide Nanocomposites” J. Am. Ceram. Soc. 83, pp. 1219-1225, 2000.
[cited by applicant]
Lagudu, et al. “Role of ionic strength in chemical mechanical polishing of silicon carbide using silica slurries” Colloids and Surfaces A: Physicochemical and Engineering Aspects 445, pp. 119-127, Jan. 25, 2014.
[cited by applicant]
Luthra, Krishan L. “Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride” J. Am. Ceram. Soc. 74 (5), pp. 1095-1103, 1991.
[cited by applicant]
Manivannan, R. and S. Ramanathan “The effect of hydrogen peroxide on polishing removal rate in CMP with varioud abrasives” Applied Surface Science 255, pp. 3764-3768, Oct. 22, 2008.
[cited by applicant]
Lee, et al. “The Effect of Mixed Abrasive Slurry on CMP of 6H-SiC Substrate” Materials Science Forum Vo. 569, pp. 133-136, 2008.
[cited by applicant]
Yin, et al. “The Effects of Strong Oxidixing Slurry and Processing Atmosphere on Double-sided CMP of SiC Wafer” Advanced Materials Research vols. 591-593, pp. 1131-1134, Nov. 29, 2012.
[cited by applicant]
Chen, et al. “The role of interactions between abrasive particles and the substrate surface in chemical-mechanical planarization of Si-face 6H-SiC” RSC Advances 7, pp. 16938-16952, 2017.
[cited by applicant]
Nguyen, et al. “The wear mechanisms of reaction bonded silicon carbide under abrasive polishing and slurry jet impact conditions” Wear, vols. 410-411, pp. 156-164, Sep. 15, 2018.
[cited by applicant]
Zhu, et al. “Tribochemical polishing of silicon carbide in oxidant solution” Wear 225-229, pp. 848-856, 1999.
[cited by applicant]
Kang, et al. “Effect of Catalyst Concentration on Chemical Mechanical Polishing Performance of Si Surface of 6H-SiC Wafer” Surface Technology, vol. 48, No. 3, 2019, pp. 291-296.
[cited by applicant]