IP Library Granted Patent US 12,449,352
Granted Patent B2
US 12,449,352 · App. 18/210,558 · Granted Oct 21, 2025

Optics for measurement of thick films and high aspect ratio structures

Inventors: David Y. Wang (Santa Clara, CA); Shankar Krishnan (Cupertino, CA)
Assignee: KLA Corporation
G01N21/31G01N2201/06113
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,449,352
App. No.
18/210,558
Granted
Oct 21, 2025
Kind
B2
Abstract

Methods and systems for performing spectroscopic ellipsometry measurements of semiconductor structures with reflective collection relay optics having demagnification from the spectrometer slit to the detector are presented herein. The demagnification effectively increases the NA at the detector and reduces the measurement spot size at the wafer imaged onto the detector. In this manner, the demagnification maintains high spectral resolution at the detector, particularly in the ultraviolet wavelength range, e.g., 120-400 nanometers, while maintaining a small collection NA at the wafer, e.g., collection NA less than 0.05. The small collection NA enables high fringe contrast, signal fidelity, and sensitivity, when measuring thick, multiple layer stacks, e.g., 200-300 layers.

Claims (36)

1. A spectroscopic metrology system comprising:

an illumination source configured to generate an amount of illumination light including wavelengths less than 150 nanometers;

an illumination optics subsystem configured to direct the amount of illumination light from the illumination source to a measurement spot on a surface of a specimen under measurement at one or more angles of incidence, one or more azimuth angles, or a combination thereof;

a reflective collection optics subsystem configured to collect an amount of collected light from the measurement spot on the surface of the specimen, the reflective collection optics subsystem including a collection mask disposed at or near a pupil plane of the reflective collection optics subsystem and a plurality of reflective relay optical elements, the plurality of reflective relay optical elements configured to image the amount of collected light from the collection mask to a dispersive element of the spectroscopic metrology system with a field demagnification greater than 1.0 in imaging space;

at least one detector having a planar, two-dimensional surface sensitive to incident light, the at least one detector configured to detect the amount of collected light dispersed by the dispersive element and generate output signals indicative of the detected light; and

a computing system configured to generate an estimated value of a parameter of interest of the specimen under measurement based on an analysis of the output signals.

2. The metrology system of claim 1 , wherein an illumination Numerical Aperture (NA) of the illumination optics subsystem at the measurement spot is at least 0.1.

3. The metrology system of claim 1 , wherein a collection Numerical Aperture (NA) of the reflective collection optics subsystem at the measurement spot is less than 0.05.

4. The metrology system of claim 1 , wherein the plurality of reflective relay optical elements is configured to image the amount of collected light from the collection mask to the dispersive element with a field demagnification greater than 2.0 in imaging space.

5. The metrology system of claim 1 , wherein the collection mask includes a plurality of apertures, each aperture configured to transmit the amount of collected light associated with a different angle of incidence from the specimen under measurement.

6. The metrology system of claim 1 , wherein the illumination source is a combined illumination source including a laser sustained plasma (LSP) illumination source and a supercontinuum laser illumination source.

7. The metrology system of claim 1 , wherein the at least one detector includes two or more detectors, wherein each of the two or more detectors detects a portion of the amount of collected light over different spectral ranges.

8. The metrology system of claim 7 , wherein each of the two or more detectors detects each portion of the amount of collected light over different spectral ranges simultaneously.

9. The metrology system of claim 1 , wherein the at least one detector includes two or more different surface areas each having different photosensitivity, wherein the two or more different surface areas are aligned with a direction of wavelength dispersion across the surface of the at least one detector.

10. The metrology system of claim 1 , wherein the specimen under measurement includes a three dimensional NAND structure or a dynamic random access memory structure.

11. A method comprising:

directing an amount of broadband illumination light including wavelengths less than 150 nanometers from an illumination source to a measurement spot on a surface of a specimen under measurement at one or more angles of incidence, one or more azimuth angles, or a combination thereof;

collecting an amount of collected light from the measurement spot on the surface of the specimen in response to the amount of illumination light, the collecting involving a collection mask disposed at or near a pupil plane of a reflective collection optics subsystem;

imaging the amount of collected light from the collection mask to a dispersive element, the imaging involving a plurality of reflective relay optical elements configured to image the amount of collected light from the collection mask to the dispersive element with a field demagnification greater than 1.0 in imaging space;

dispersing the amount of collected light onto at least one detector; and

detecting measurement spectra associated with the amount of collected light with the at least one detector.

12. The method of claim 11 , wherein an illumination Numerical Aperture (NA) of the illumination optics subsystem at the measurement spot is at least 0.1.

13. The method of claim 11 , wherein a collection Numerical Aperture (NA) of the reflective collection optics subsystem at the measurement spot is less than 0.05.

14. The method of claim 11 , wherein the plurality of reflective relay optical elements is configured to image the amount of collected light from the collection mask to the dispersive element with a field demagnification greater than 2.0 in imaging space.

15. The method of claim 11 , wherein the collection mask includes a plurality of apertures, each aperture configured to transmit the amount of collected light associated with a different angle of incidence from the specimen under measurement.

16. The method of claim 11 , wherein the illumination source is a combined illumination source including a laser sustained plasma (LSP) illumination source and a supercontinuum laser illumination source.

17. The method of claim 11 , wherein the at least one detector includes two or more detectors, wherein each of the two or more detectors detects a portion of the amount of collected light over different spectral ranges.

18. The method of claim 17 , wherein each of the two or more detectors detects each portion of the amount of collected light over different spectral ranges simultaneously.

19. The method of claim 11 , wherein the at least one detector includes two or more different surface areas each having different photosensitivity, wherein the two or more different surface areas are aligned with a direction of wavelength dispersion across the surface of the at least one detector.

20. A spectroscopic metrology system comprising:

an illumination source configured to generate an amount of illumination light including wavelengths less than 150 nanometers;

an illumination optics subsystem configured to direct the amount of illumination light from the illumination source to a measurement spot on a surface of a specimen under measurement at one or more angles of incidence, one or more azimuth angles, or a combination thereof;

a reflective collection optics subsystem configured to collect an amount of collected light from the measurement spot on the surface of the specimen, the reflective collection optics subsystem including a collection mask disposed at or near a pupil plane of the reflective collection optics subsystem and a plurality of reflective relay optical elements, the plurality of reflective relay optical elements configured to image the amount of collected light from the collection mask to a dispersive element of the spectroscopic metrology system with a field demagnification greater than 1.0 in imaging space;

at least one detector having a planar, two-dimensional surface sensitive to incident light, the at least one detector configured to detect the amount of collected light dispersed by the dispersive element and generate output signals indicative of the detected light; and

a non-transitory, computer-readable medium storing instructions that, when executed by one or more processors, causes the one or more processors to:

generate an estimated value of a parameter of interest of the specimen under measurement based on an analysis of the output signals.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2023
From: WANG, DAVID Y.; KRISHNAN, SHANKAR
To: KLA CORPORATION
Reel/Frame 064503/0610 →
Continuity (1)
Related Publication 20240418635A1 · Dec 19, 2024
References Cited (78)
US 5608526A · Piwonka-Corle et al. · 1997 [cited by applicant]
US 5859424A · Norton et al. · 1999 [cited by applicant]
US 6023338A · Bareket · 2000 [cited by applicant]
US 6429943B1 · Opsal et al. · 2002 [cited by applicant]
US 6716646B1 · Wright et al. · 2004 [cited by applicant]
US 6778275B2 · Bowes · 2004 [cited by applicant]
US 6787773B1 · Lee · 2004 [cited by applicant]
US 6992764B1 · Yang et al. · 2006 [cited by applicant]
US 7230701B2 · Stehle et al. · 2007 [cited by applicant]
US 7242477B2 · Mieher et al. · 2007 [cited by applicant]
US 7321426B1 · Poslavsky et al. · 2008 [cited by applicant]
US 7406153B2 · Berman · 2008 [cited by applicant]
US 7478019B2 · Zangooie et al. · 2009 [cited by applicant]
US 7626702B2 · Ausschnitt et al. · 2009 [cited by applicant]
US 7656528B2 · Abdulhalim et al. · 2010 [cited by applicant]
US 7826071B2 · Shchegrov et al. · 2010 [cited by applicant]
US 7842933B2 · Shur et al. · 2010 [cited by applicant]
US 7873585B2 · Izikson · 2011 [cited by applicant]
US 7929667B1 · Zhuang et al. · 2011 [cited by applicant]
US 7933026B2 · Opsal et al. · 2011 [cited by applicant]
US 8068662B2 · Zhang et al. · 2011 [cited by applicant]
US 8138498B2 · Ghinovker · 2012 [cited by applicant]
US 8860937B1 · Dziura et al. · 2014 [cited by applicant]
US 9291554B2 · Kuznetsov et al. · 2016 [cited by applicant]
US 9826614B1 · Bakeman et al. · 2017 [cited by applicant]
US 9885962B2 · Veldman et al. · 2018 [cited by applicant]
US 9915522B1 · Jiang et al. · 2018 [cited by applicant]
US 10013518B2 · Bakeman et al. · 2018 [cited by applicant]
US 10101670B2 · Pandev et al. · 2018 [cited by applicant]
US 10152678B2 · Pandev et al. · 2018 [cited by applicant]
US 10324050B2 · Hench et al. · 2019 [cited by applicant]
US 10352695B2 · Dziura et al. · 2019 [cited by applicant]
US 10545104B2 · Hench et al. · 2020 [cited by applicant]
US 10690602B2 · Sapiens et al. · 2020 [cited by applicant]
US 10775323B2 · Gellineau et al. · 2020 [cited by applicant]
US 10801953B2 · Wang et al. · 2020 [cited by applicant]
US 20030021465A1 · Adel et al. · 2003 [cited by applicant]
US 20070176128A1 · Van Bilsen et al. · 2007 [cited by applicant]
US 20070221842A1 · Morokuma et al. · 2007 [cited by applicant]
US 20080175349A1 · McGuire · 2008 [cited by examiner]
US 20090152463A1 · Toyoda et al. · 2009 [cited by applicant]
US 20110266440A1 · Boughorbel et al. · 2011 [cited by applicant]
US 20120292502A1 · Langer et al. · 2012 [cited by applicant]
US 20130003050A1 · Zhu et al. · 2013 [cited by applicant]
US 20130114085A1 · Wang et al. · 2013 [cited by applicant]
US 20130208279A1 · Smith · 2013 [cited by applicant]
US 20130304424A1 · Bakeman et al. · 2013 [cited by applicant]
US 20140019097A1 · Bakeman et al. · 2014 [cited by applicant]
US 20140064445A1 · Adler · 2014 [cited by applicant]
US 20140111791A1 · Manassen et al. · 2014 [cited by applicant]
US 20140172394A1 · Kuznetsov et al. · 2014 [cited by applicant]
US 20140222380A1 · Kuznetsov et al. · 2014 [cited by applicant]
US 20140297211A1 · Pandev et al. · 2014 [cited by applicant]
US 20150046121A1 · Dziura et al. · 2015 [cited by applicant]
US 20150110249A1 · Bakeman et al. · 2015 [cited by applicant]
US 20150117610A1 · Veldman et al. · 2015 [cited by applicant]
US 20150204664A1 · Bringoltz et al. · 2015 [cited by applicant]
US 20150285749A1 · Moncton et al. · 2015 [cited by applicant]
US 20150300965A1 · Sezginer et al. · 2015 [cited by applicant]
US 20160202193A1 · Hench et al. · 2016 [cited by applicant]
US 20160245741A1 · Krishnan et al. · 2016 [cited by applicant]
US 20160320319A1 · Hench et al. · 2016 [cited by applicant]
US 20170167862A1 · Dziura et al. · 2017 [cited by applicant]
US 20180106735A1 · Gellineau et al. · 2018 [cited by applicant]
US 20180113084A1 · Hench et al. · 2018 [cited by applicant]
US 20180328868A1 · Bykanov et al. · 2018 [cited by applicant]
US 20190017946A1 · Wack et al. · 2019 [cited by applicant]
US 20190049365A1 · Blasenheim · 2019 [cited by examiner]
US 20190293578A1 · Gellineau · 2019 [cited by applicant]
US 20200089135A1 · Goorden · 2020 [cited by examiner]
US 20210010949A1 · Xu · 2021 [cited by examiner]
US 20210207956A1 · Shchegrov et al. · 2021 [cited by applicant]
JP 2000097666A · 2007 [cited by applicant]
JP 2008004638A · 2008 [cited by applicant]
Gostein et al., “Measuring deep-trench structures with model-based IR,” Solid State Technology, vol. 49, No. 3, pp. 38-42, Mar. 1, 2006. [cited by applicant]
Lemaillet, Germer, Kline et al., “Intercomparison between optical and x-ray scatterometry measurements of FinFET structures” by Proc. SPIE, v.8681, p. 86810Q (2013). [cited by applicant]
Kline et al., “X-ray scattering critical dimensional metrology using a compact x-ray source for next generation semiconductor devices,” J. Micro/Nanolith. MEMS MOEMS 16(1), 014001 (Jan.-Mar. 2017). [cited by applicant]
International Search Report mailed on Sep. 24, 2024, for PCT Application No. PCT/US2024/032675 filed on Jun. 5, 2024, by KLA Corporation, 3 pages. [cited by applicant]