Metalorganic films for extreme ultraviolet patterning
A method of processing a substrate that includes: forming, over the substrate placed in a process chamber, an extreme ultraviolet (EUV)-active photoresist film including a tin alkenoxide moiety by exposing the substrate to a tin-containing precursor and exposing the substrate to an oxygen-containing precursor that reacts with the tin from the tin-containing precursor to form the tin alkenoxide; and patterning the EUV-active photoresist film by exposing the substrate to an EUV irradiation.
1. A method of processing a substrate, the method comprising:
forming, over the substrate placed in a process chamber, an extreme ultraviolet (EUV)-active photoresist film comprising a tin alkenoxide, a tin alkoxide, a tin aryloxide, or a tin carboxylate moiety, the forming comprising
exposing the substrate to a tin-containing precursor, and
exposing the substrate to an oxygen-containing precursor that reacts with tin from the tin-containing precursor to form the tin alkenoxide, the tin alkoxide, the tin aryloxide, or the tin carboxylate, wherein the tin-containing precursor and the oxygen-containing precursor comprise liquids;
incorporating a photoacid generator (PAG) into the EUV-active photoresist film, the PAG being formed from an aluminum (Al) precursor or a boron (B) precursor, and the PAG comprising aluminum fluoroalkoxide moieties, boron fluoroalkoxide moieties, or boron fluorophenoxide moieties; and
patterning the EUV-active photoresist film by exposing the substrate to an EUV irradiation.
2. The method of claim 1 , wherein the exposing the substrate to the tin-containing precursor and the exposing the substrate to the oxygen-containing precursor are separated temporally by changing precursor composition in the process chamber or spatially by using multiple segregated sections within the process chamber.
3. The method of claim 1 , further comprising rinsing the substrate with a solvent to remove an excess amount of the tin-containing precursor or the oxygen-containing precursor between the exposing steps of exposing the substrate to the tin-containing precursor and exposing the substrate to the oxygen-containing precursor.
4. The method of claim 1 , wherein the exposing steps of exposing the substrate to the tin-containing precursor and exposing the substrate to the oxygen-containing precursor overlap in time.
5. The method of claim 1 , further comprising repeating the exposing steps of exposing the substrate to the tin-containing precursor and exposing the substrate to the oxygen-containing precursor.
6. The method of claim 1 , wherein the oxygen-containing precursor comprises an alkenol.
7. The method of claim 1 , wherein the tin-containing precursor comprises trimethyl tin chloride (Me 3 SnCl), dimethyl tin dichloride (Me 2 SnCl 2 ), methyl tin trichloride (MeSnCl 3 ), tris(dimethylamino)methyl tin(IV) ((CH 3 ) 2 N) 3 SnMe), or (dimethylamino)trimethyl tin(IV) ((CH 3 ) 2 N)SnMe 3 ).
8. The method of claim 1 , wherein the patterning comprises crosslinking the EUV-active photoresist film by polymerizing an alkene portion of the tin alkenoxide.
9. The method of claim 8 , wherein the crosslinking occurs only in an EUV exposed region of the EUV-active photoresist film during the patterning of the EUV-active photoresist film with EUV lithography.
10. A method of processing a substrate, the method comprising:
forming, over the substrate placed in a process chamber, an extreme ultraviolet (EUV)-active photoresist film comprising a tin alkenoxide, a tin alkoxide, a tin aryloxide, or a tin carboxylate moiety by
exposing the substrate to a tin-containing precursor, and
exposing the substrate to an oxygen-containing precursor that reacts with the tin from the tin-containing precursor to form the tin alkenoxide, the tin alkoxide, the tin aryloxide, or the tin carboxylate, wherein the exposing the substrate to the tin-containing precursor and the exposing the substrate to the oxygen-containing precursor are separated temporally by changing precursor composition in the process chamber or spatially by using multiple segregated sections within the process chamber;
incorporating a photoacid generator (PAG) into the EUV-active photoresist film, the PAG being formed from an aluminum (Al) precursor or a boron (B) precursor, and the PAG comprising aluminum fluoroalkoxide moieties, boron fluoroalkoxide moieties, or boron fluorophenoxide moieties; and
patterning the EUV-active photoresist film by exposing the substrate to an EUV irradiation.
11. The method of claim 10 , wherein the oxygen-containing precursor comprises an alcohol.
12. The method of claim 10 , wherein the oxygen-containing precursor comprises a diol.
13. The method of claim 12 , wherein the diol is ethylene glycol.
14. The method of claim 10 , wherein the EUV-active photoresist film comprises the tin aryloxide, and wherein the oxygen-containing precursor comprises a phenolic compound.
15. The method of claim 10 , wherein the EUV-active photoresist film comprises the tin carboxylate, and wherein the oxygen-containing precursor comprises a carboxylic acid.
16. The method of claim 10 , wherein the EUV-active photoresist film comprises the tin carboxylate, and wherein the oxygen-containing precursor comprises an alkene moiety, a carboxylic group, and a hydroxy group.
17. The method of claim 10 , wherein the EUV-active photoresist film comprises the tin carboxylate, and wherein the oxygen-containing precursor comprises an alkene moiety and two carboxylic groups.
18. A method of forming an extreme ultraviolet (EUV)-active photoresist film over a substrate, the method comprising:
exposing the substrate to a tin-containing precursor;
exposing the substrate to an oxygen-containing precursor to form the EUV-active photoresist film comprising tin and oxygen; and
incorporating a photoacid generator (PAG) into the EUV-active photoresist film by
exposing the substrate to an aluminum (Al) precursor or a boron (B) precursor, and
exposing the substrate to a fluorinated alcohol precursor or a fluorinated phenol precursor to incorporate aluminum fluoroalkoxide moieties, boron fluoroalkoxide moieties, or boron fluorophenoxide moieties as the photoacid generator (PAG) into the EUV-active photoresist film, wherein the incorporating is performed during or after forming the EUV-active photoresist film.
19. The method of claim 18 , wherein the incorporating comprises:
exposing the substrate to the aluminum (Al) precursor; and
exposing the substrate to the fluorinated alcohol precursor to incorporate aluminum fluoroalkoxide moieties as the photoacid generator (PAG) into the EUV-active photoresist film.
20. The method of claim 18 , wherein the incorporating comprises:
exposing the substrate to the boron (B) precursor; and
exposing the substrate to the fluorinated alcohol precursor or the fluorinated phenol precursor to incorporate boron fluoroalkoxide or boron fluorophenoxide moieties as the photoacid generator (PAG) into the EUV-active photoresist film.