Method for removing material overburden via enhanced freeze-less anti-spacer formation using a bilayer system
Techniques herein include methods of patterning a substrate using surface energy differences found in some fluorinated polymers or polymers with long chain alkyl functionality that promotes surface or top layer segregation in a bilayer polymer system to facilitate overburden removal when the polymer mixture is deposited over a relief pattern. The method allows for fast removal of the overburden to expose the anti-spacer region which, after acid diffusion and subsequent deprotection, is also soluble in a developer. Incorporating the highly developer-soluble polymer at the top of the top layer removes the need for the remaining polymer to have a specific dissolution rate in developer.
1 . A method of patterning a substrate, comprising:
forming a relief pattern including relief structures on a substrate from a first layer of photoresist on the substrate, the first layer of photoresist including a first solubility-shifting agent and a second solubility-shifting agent, the photoresist having a sensitivity to the first solubility-shifting agent and the second solubility-shifting agent, the relief pattern formed by activating the first solubility-shifting agent using a pattern of actinic radiation and developing the first layer of photoresist;
depositing a polymer mixture on the relief structures, the polymer mixture filling openings defined by the relief pattern and covering the relief structures, a region above top surfaces of the relief structures being an overburden region, the polymer mixture including a first polymer and a second polymer, the polymer mixture being configured to self-segregate relative to gravity such that a first film and a second film are formed from the polymer mixture, the first film including the first polymer formed below the second film including the second polymer, the first film and the second film formed such that the second film fills the overburden region, the first film being sensitive to the second solubility-shifting agent and having a threshold of sensitivity that is less than a threshold of sensitivity of the photoresist, the second film being soluble to a first developer;
activating the second solubility-shifting agent and diffusing the second solubility-shifting agent a predetermined diffusion length from the relief structures into the first film, the second solubility-shifting agent activated sufficiently to meet the threshold of sensitivity of the first film without meeting the threshold of sensitivity of the photoresist, diffusion regions formed in the first film becoming soluble to the first developer while the photoresist remains insoluble to the first developer; and
developing the substrate to remove the second film and the soluble diffusion regions of the first film.
2 . The method of claim 1 , wherein the polymer mixture is deposited via spin-coating deposition.
3 . The method of claim 1 , further comprising self-segregating the polymer mixture upon being deposited on the substrate.
4 . The method of claim 3 , wherein the second film extends below the top surfaces of the relief structures upon self-segregating.
5 . The method of claim 3 , wherein the polymer mixture is self-segregated in response to performing a thermal bake.
6 . The method of claim 1 , wherein developing the substrate further comprises developing the substrate with the first developer to remove the second film and the soluble diffusion regions of the first film.
7 . The method of claim 1 , wherein
the second film is soluble to a second developer, and
developing the substrate further comprises developing the substrate with the second developer to remove the second film before developing the substrate with the first developer to remove the soluble diffusion regions of the first film.
8 . The method of claim 7 , wherein the second film is removed after activating the second solubility shifting agent.
9 . The method of claim 7 , wherein the second film is removed before activating the second solubility shifting agent.
10 . A method of patterning a substrate, comprising:
forming a relief pattern including relief structures on a substrate from a first layer of photoresist on the substrate, the first layer of photoresist including a first solubility-shifting agent and a second solubility-shifting agent, the photoresist having a sensitivity to the first solubility-shifting agent and the second solubility-shifting agent, the relief pattern formed by activating the first solubility-shifting agent using a pattern of actinic radiation and developing the first layer of photoresist;
depositing a resin overcoat on the relief structures, the resin overcoat filling openings defined by the relief pattern and covering the relief structures, a region above top surfaces of the relief structures being an overburden region, the resin overcoat having a resin mixture including a first resin and a second resin, the resin overcoat being configured to self-segregate relative to gravity such that a first film and a second film are formed from the resin overcoat, the first film including the first resin formed below the second film including the second resin, the first film and the second film formed such that the second film fills the overburden region, the first film being sensitive to the second solubility-shifting agent and having a threshold of sensitivity that is less than a threshold of sensitivity of the photoresist, the second film being soluble to a first developer;
activating the second solubility-shifting agent and diffusing the second solubility-shifting agent a predetermined diffusion length from the relief structures into the first film, the second solubility-shifting agent activated sufficiently to meet the threshold of sensitivity of the first film without meeting the threshold of sensitivity of the photoresist, diffusion regions formed in the first film becoming soluble to the first developer while the photoresist remains insoluble to the first developer; and
developing the substrate to remove the second film and the soluble diffusion regions of the first film.
11 . The method of claim 10 , wherein the resin overcoat is deposited via spin-coating deposition.
12 . The method of claim 10 , further comprising self-segregating the resin overcoat upon being deposited on the substrate.
13 . The method of claim 12 , wherein the second film extends below the top surfaces of the relief structures upon self-segregating.
14 . The method of claim 12 , wherein the resin overcoat is self-segregated in response to performing a thermal bake.
15 . The method of claim 10 , wherein developing the substrate further comprises developing the substrate with the first developer to remove the second film and the soluble diffusion regions of the first film.
16 . The method of claim 10 , wherein
the second film is soluble to a second developer, and
developing the substrate further comprises developing the substrate with the second developer to remove the second film before developing the substrate with the first developer to remove the soluble diffusion regions of the first film.
17 . The method of claim 16 , wherein the second film is removed after activating the second solubility shifting agent.
18 . The method of claim 16 , wherein the second film is removed before activating the second solubility shifting agent.