Multi-gate device and method of fabrication thereof
A semiconductor device includes a fin extending from a substrate. The fin has a source/drain region and a channel region. The channel region includes a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer and vertically separated from the first semiconductor layer by a spacing area. A high-k dielectric layer at least partially wraps around the first semiconductor layer and the second semiconductor layer. A metal layer is formed along opposing sidewalls of the high-k dielectric layer. The metal layer includes a first material. The spacing area is free of the first material.
1 . A method of forming a semiconductor device, the method comprising:
providing a fin having a first fin portion including a plurality of channel layers composed of a first material and a second fin portion disposed beneath the first fin portion, wherein the second fin portion is composed of a second material having a different bandgap than the first material;
forming a dielectric layer at least partially wrapping around each channel layer of the plurality of channel layers; and
forming a metal layer adjacent to the fin;
wherein a distance between adjacent channel layers of the plurality of channel layers is determined based on a predetermined threshold; and
wherein an interposing feature that fills a gap between the adjacent channel layers of the plurality of channel layers is substantially free of the metal layer.
2 . The method of claim 1 , wherein the first material has a greater bandgap than the second material.
3 . The method of claim 1 , wherein the first material includes silicon and the second material includes silicon germanium.
4 . The method of claim 1 , wherein the dielectric layer provides at least part of the interposing feature.
5 . The method of claim 1 , wherein the forming the metal layer further includes forming the metal layer along opposing sidewalls of the interposing feature.
6 . The method of claim 1 , wherein the adjacent channel layers have a cross-sectional profile determined based on the predetermined threshold.
7 . The method of claim 1 , wherein the metal layer is for performing a scavenging process to the dielectric layer, and wherein the scavenging process is performed to tune at least one of a flat band voltage and a threshold voltage of the semiconductor device.
8 . The method of claim 1 , wherein the metal layer is for performing a scavenging process, and wherein the scavenging process is performed to reduce an equivalent oxide thickness (EOT) of the semiconductor device.
9 . A method, comprising:
forming an interposing feature in a channel region of a fin element between adjacent semiconductor channel layers disposed within a first portion of the fin element, wherein the interposing feature at least partially wraps around each semiconductor channel layer of the adjacent semiconductor channel layers, and wherein a bottommost semiconductor channel layer of the adjacent semiconductor channel layers is disposed on a second portion of the fin element having a different composition than the bottommost semiconductor channel layer; and
depositing a metal layer proximate to the interposing feature.
10 . The method of claim 9 , wherein the bottommost semiconductor channel layer has a greater bandgap than the second portion of the fin element.
11 . The method of claim 9 , wherein the interposing feature is substantially free of the metal layer.
12 . The method of claim 9 , wherein the depositing the metal layer includes depositing a scavenging metal layer at least partially wrapping around the interposing feature for performing a scavenging process to the interposing feature.
13 . The method of claim 9 , further comprising:
performing an annealing process to the metal layer to cause a scavenging process to the interposing feature.
14 . The method of claim 9 , wherein a distance between the adjacent semiconductor channel layers is determined based on a predetermined scavenging threshold of a scavenging process to the interposing feature.
15 . The method of claim 9 , wherein at least one semiconductor channel layer of the adjacent semiconductor channel layers has a profile determined based on a predetermined scavenging threshold of a scavenging process to the interposing feature.
16 . A method, comprising:
providing a substrate including a fin element extending from the substrate, the fin element including a first material layer having a first bandgap, a second material layer disposed over the first material layer, the second material layer having a second bandgap greater than the first bandgap, and a plurality of semiconductor channel layers disposed over the second material layer;
removing at least a portion of a layer interposing adjacent semiconductor channel layers of the plurality of semiconductor channel layers within a channel region of the fin element;
forming an interposing feature in the channel region, wherein the interposing feature at least partially wraps around the adjacent semiconductor channel layers;
forming a metal layer in the channel region; and
performing an annealing process to the metal layer.
17 . The method of claim 16 , wherein the forming the metal layer includes forming a scavenging metal layer along opposing sidewalls of the interposing feature.
18 . The method of claim 16 , wherein the first material layer includes silicon germanium.
19 . The method of claim 16 , wherein the performing the annealing process causes a scavenging process to the interposing feature, wherein the interposing feature includes an interfacial layer, and wherein the scavenging process scavenges substantially all of the interfacial layer.
20 . The method of claim 16 , wherein a distance between the adjacent semiconductor channel layers of the plurality of semiconductor channel layers is determined based on a predetermined scavenging threshold of a scavenging process to the interposing feature.