Directional selective junction clean with field polymer protections
Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CH x F y gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH 3 —NF 3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.
1 . A processing chamber comprising:
a chamber body having a lid, bottom wall, and at least one sidewall defining a processing volume;
a nozzle connected to a gasline and in fluid communication with the processing volume;
a gas source located outside of the chamber body and in fluid communication with the gasline, the gas source comprising a gas comprising CH X F y ;
a plurality of coils on the lid of the chamber body and near the gasline, the plurality of coils configured to generate an inductively coupled plasma (ICP) of the gas in the processing volume;
a substrate support comprising an electrostatic chuck, the electrostatic chuck configured to generate a capacitively coupled plasma (CCP) of the gas in the gas-processing volume;
wherein one of the lid and the electrostatic chuck is connected to an RF power source and the other of the lid and the electrostatic chuck is connected to electrical ground to generate a plasma within the processing volume;
a controller configured to cause the processing chamber to perform operations of:
flowing the ICP of the gas into the processing volume of the processing chamber to form a polymer layer on a sidewall and a bottom surface of a feature on a substrate, the feature located between a first metal gate structure and a second metal gate structure, the bottom surface of the feature comprising a dielectric layer on a top surface of an epitaxial layer,
and selectively removing the dielectric layer by flowing the CCP of the gas into the processing volume of the processing chamber.
2 . The processing chamber of claim 1 , further comprising a heater.
3 . The processing chamber of claim 1 , further comprising at least one edge ring on a top surface of the electrostatic chuck.
4 . The processing chamber of claim 3 , further comprising the substrate on the top surface of the electrostatic chuck.
5 . The processing chamber of claim 4 , wherein the first metal gate structure and the second metal gate structure comprise one or more of a metal gate, a cap layer, and a spacer.
6 . A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing chamber, cause the processing chamber to perform operations of:
flowing a gas into a processing volume of the processing chamber, the gas comprising CHxFy;
generating an inductively coupled plasma (ICP) of the gas in the processing volume;
forming a polymer layer on a sidewall and a bottom surface of a feature on a substrate, the feature located between a first metal gate structure and a second metal gate structure, the bottom surface of the feature comprising a dielectric layer on a top surface of an epitaxial layer; and
selectively removing the dielectric layer by flowing a capacitively coupled plasma (CCP) of the gas into the processing volume of the processing chamber.
7 . The non-transitory computer readable medium of claim 6 , including instructions that, when executed by the controller of the processing chamber, cause the processing chamber to perform further operations of:
stripping the polymer layer with ammonia (NH 3 ) or nitrogen (N 2 )/hydrogen (H 2 ) plasma.
8 . The processing chamber of claim 1 , wherein the gas is selected from one or more of methyl fluoride (CH 3 F), fluoroform (CHF 3 ), hexafluoro-1,3-butadiene (C 4 F 6 ), octafluorocyclobutane (C 4 F 8 ), methane (CH 4 ), carbon tetrafluoride (CF 4 ), hexafluoroethane (C 2 F 6 ), ethylene (C 2 H 4 ), ethane (C 2 H 6 ), argon (Ar), hydrogen (H 2 ), ammonia (NH 3 ), nitrogen trifluoride (NF 3 ), helium (He), nitrogen (N 2 ), oxygen (O 2 ), carbon monoxide (CO), carbon dioxide (CO 2 ), sulfur hexafluoride (SF 6 ), and hydrogen fluoride (HF).