Cathode assembly for integration of embedded electrostatic chuck (ESC)
Embodiments disclosed herein include an apparatus that includes an electrostatic chuck (ESC). The electrostatic chuck may include a first body that is electrically conductive, and a ceramic insert on the first body with an electrode embedded within the ceramic insert. In an embodiment, the apparatus may further include a facility plate that is coupled to the ESC. The facility plate may include a second body that is electrically conductive with a hole through the second body. In an embodiment, a DC input connector is provided through the hole, and an RF feed line is coupled to the second body. In an embodiment, a pin of the DC input connector is electrically isolated from the RF feed line.
1 . An apparatus, comprising:
an electrostatic chuck (ESC) comprising:
a first body that is electrically conductive; and
a ceramic insert on the first body, wherein an electrode is embedded within the ceramic insert; and
a facility plate coupled to the ESC, wherein the facility plate comprises:
a second body that is electrically conductive;
a hole through the second body;
a DC input connector through the hole; and
an RF feed line coupled to the second body, wherein a pin of the DC input connector is electrically isolated from the RF feed line.
2 . The apparatus of claim 1 , wherein the facility plate is electrically coupled to the ESC by one or more links.
3 . The apparatus of claim 1 , wherein the pin of the DC input connector is surrounded by an electrically insulating collar.
4 . The apparatus of claim 1 , wherein the DC input connector is electrically coupled to the electrode by an input assembly that passes at least partially through a thickness of the first body.
5 . The apparatus of claim 4 , wherein the input assembly comprises a spring.
6 . The apparatus of claim 1 , wherein the facility plate comprises a fluidic path from a first surface of the second body to a second surface of the second body, wherein the fluidic path comprises a first vertical portion, a horizontal channel, and a second vertical portion.
7 . The apparatus of claim 6 , wherein the horizontal channel comprises a first branch and a second branch that intersects the first branch.
8 . The apparatus of claim 1 , wherein the ESC comprises a first fluidic channel and a second fluidic channel.
9 . The apparatus of claim 8 , wherein the first fluidic channel is an outer zone backside gas channel, and wherein the second fluidic channel is an inner zone backside gas channel.
10 . The apparatus of claim 1 , wherein a diameter of the facility plate is smaller than a diameter of the ESC.
11 . An apparatus, comprising:
a body with a first surface and a second surface opposite from the first surface, wherein the body is electrically conductive;
a hole through the body;
an input connector through the hole, wherein the input connector comprises a pin that is electrically conductive and a collar around the pin, wherein the collar is electrically insulating; and
an electrically conductive feed line contacting the body.
12 . The apparatus of claim 11 , wherein the feed line is electrically isolated from the pin.
13 . The apparatus of claim 11 , further comprising:
a fluidic path from the first surface to the second surface.
14 . The apparatus of claim 13 , wherein the fluidic path comprises a first end on the first surface and a second end on the second surface, and wherein the first end is offset from the second end in an X-Y plane.
15 . The apparatus of claim 14 , wherein the fluidic path comprises a horizontal channel within the body that couples the first end to the second end.
16 . The apparatus of claim 15 , wherein the horizontal channel comprises an intersection point.
17 . A semiconductor processing tool, comprising:
a chamber suitable for maintaining a vacuum environment within the chamber; and
a cathode assembly within the chamber, wherein the cathode assembly comprises:
an electrostatic chuck (ESC) comprising:
a first body that is electrically conductive; and
a ceramic insert on the first body, wherein an electrode is embedded within the ceramic insert; and
a facility plate coupled to the ESC, wherein the facility plate comprises:
a second body that is electrically conductive;
a hole through the second body;
a DC input connector through the hole; and
an RF feed line coupled to the second body, wherein a pin of the DC input connector is electrically isolated from the RF feed line.
18 . The semiconductor processing tool of claim 17 , wherein the semiconductor processing tool is configured for plasma dicing operations.
19 . The semiconductor processing tool of claim 17 , wherein the facility plate comprises a fluidic path with a first vertical portion, a second vertical portion, and a horizontal portion that couples the first vertical portion to the second vertical portion.
20 . The semiconductor processing tool of claim 17 , wherein the DC input connector comprises a pin, and wherein the pin is electrically coupled to the electrode by at least a spring.