Semiconductor device and method for fabricating the same
There is provided a semiconductor device including an active pattern which includes a lower pattern extending in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on a substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a capping pattern being in contact with the protruding pattern on the protruding pattern, a first gate structure and a second gate structure which are disposed on the lower pattern and spaced apart from each other in the first direction, and a source/drain pattern which is disposed on the lower pattern and in contact with the sheet pattern, wherein a thickness of the capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure.
1 . A semiconductor device comprising:
an active pattern which includes a lower pattern extending lengthwise in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on a substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a capping pattern on and contacting the protruding pattern;
a first gate structure and a second gate structure which are disposed on the lower pattern and spaced apart from each other in the first direction; and
a source/drain pattern which is disposed on the lower pattern and in contact with the plurality of sheet patterns,
wherein a thickness of the capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure.
2 . The semiconductor device of claim 1 , wherein the capping pattern includes one of a silicon germanium film and a carbon-doped silicon film.
3 . The semiconductor device of claim 1 , wherein the capping pattern includes a lower capping pattern and an upper capping pattern which are sequentially disposed on an upper surface of the protruding pattern.
4 . The semiconductor device of claim 3 ,
wherein a thickness of the lower capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure, and
wherein a thickness of the upper capping pattern in a portion that overlaps the first gate structure is the same as a thickness of the upper capping pattern in a portion that overlaps the second gate structure.
5 . The semiconductor device of claim 3 , wherein the lower capping pattern includes one of a silicon germanium film and a carbon-doped silicon film.
6 . The semiconductor device of claim 3 , wherein the upper capping pattern includes one of an undoped silicon film, a silicon germanium film, and a carbon-doped silicon film.
7 . The semiconductor device of claim 1 ,
wherein the first gate structure includes a gate insulating film and a gate electrode,
wherein the first gate structure includes an inner gate structure which is disposed between the lower pattern and an adjacent sheet pattern, and between sheet patterns adjacent in the second direction, and
wherein the inner gate structure includes the gate electrode and the gate insulating film.
8 . The semiconductor device of claim 7 , wherein the source/drain pattern is in contact with the gate insulating film of the inner gate structure.
9 . The semiconductor device of claim 7 , wherein the first gate structure includes an inner spacer which is disposed between the lower pattern and the adjacent sheet pattern, and between the sheet patterns adjacent in the second direction.
10 . The semiconductor device of claim 1 , wherein the substrate includes a (110) silicon wafer.
11 . The semiconductor device of claim 1 ,
wherein each of the plurality of sheet patterns includes an upper surface and a lower surface that are opposite in the second direction, and
wherein each of the upper surface and the lower surface of each of the plurality of sheet patterns has a (110) crystal plane.
12 . A semiconductor device comprising:
an active pattern which includes a lower pattern extending lengthwise in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on a substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a capping pattern on and contacting the protruding pattern;
a first gate structure including a gate electrode and a gate insulating film on the lower pattern; and
a source/drain pattern which is disposed on the lower pattern and in contact with the plurality of sheet patterns,
wherein the first gate structure includes an inner gate structure which is disposed between the lower pattern and an adjacent sheet pattern, and between sheet patterns adjacent in the second direction,
wherein the inner gate structure includes the gate electrode and the gate insulating film,
wherein the gate insulating film of the inner gate structure is in contact with an upper surface of the capping pattern,
wherein each of the plurality of sheet patterns includes an upper surface and a lower surface that are opposite to each other in the second direction, and
wherein each of the upper surface and the lower surface of each of the plurality of sheet patterns has a (110) crystal plane.
13 . The semiconductor device of claim 12 , further comprising:
a second gate structure which is disposed on the lower pattern and spaced apart from the first gate structure in the first direction,
wherein a thickness of the capping pattern in a portion that overlaps the first gate structure is different from a thickness of the capping pattern in a portion that overlaps the second gate structure.
14 . The semiconductor device of claim 12 , wherein the capping pattern includes at least one of an undoped silicon film, a silicon germanium film, and a carbon-doped silicon film.
15 . The semiconductor device of claim 14 , wherein the capping pattern includes a lower capping pattern that is in contact with the protruding pattern, and an upper capping pattern on the lower capping pattern.
16 . The semiconductor device of claim 12 , wherein the source/drain pattern is in contact with the gate insulating film of the inner gate structure.
17 . The semiconductor device of claim 12 , wherein the first gate structure includes an inner spacer which is disposed between the lower pattern and the adjacent sheet pattern, and between the sheet patterns adjacent in the second direction.
18 . A semiconductor device comprising:
a substrate including a (110) silicon wafer;
an active pattern which includes a lower pattern extending lengthwise in a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction on the substrate, the lower pattern including a protruding pattern protruding from the substrate in the second direction, and a first capping pattern on and contacting the protruding pattern;
a first gate structure and a second gate structure disposed on the lower pattern and spaced apart from each other in the first direction; and
a source/drain pattern which is disposed on the lower pattern and in contact with the plurality of sheet patterns,
wherein a thickness of the first capping pattern in a portion that overlaps the first gate structure is different from a thickness of the first capping pattern in a portion that overlaps the second gate structure,
wherein each of the plurality of sheet patterns includes an upper surface and a lower surface that are opposite in the second direction, and
wherein each of the upper surface and the lower surface of each of the plurality of sheet patterns has a (110) crystal plane.
19 . The semiconductor device of claim 18 , wherein the first capping pattern includes one of a silicon germanium film and a carbon-doped silicon film.
20 . The semiconductor device of claim 18 ,
wherein the lower pattern further includes a second capping pattern on the first capping pattern, and
wherein the second capping pattern includes one of an undoped silicon film, a silicon germanium film, and a carbon-doped silicon film.