Transistor and manufacturing method thereof, and memory
The present disclosure provides a transistor and a manufacturing method thereof, and a memory, relates to the technical field of semiconductors. The transistor includes: a channel, wherein an accommodation space is formed therein; a gate, provided with a first end and a second end that are opposite, wherein the first end of the gate is located inside the accommodation space, and the second end of the gate is located outside the accommodation space; a dielectric layer, located between the gate and a channel, insulating and isolating the gate and the channel; a source, provided at one end of the channel; and a drain, provided at the other end of the channel, wherein the drain and the source are arranged at intervals along a length direction of the channel, and the source, the drain, and the channel are each made of a semiconductor material.
1 . A transistor, comprising:
a channel, wherein the channel itself encloses an accommodation space;
a gate, provided with a first end and a second end that are opposite, wherein the first end of the gate is located inside the accommodation space, and the second end of the gate is located outside the accommodation space;
a dielectric layer, located between the gate and the channel, insulating and isolating the gate and the channel;
a source, provided at one end of the channel; and
a drain, provided at the other end of the channel, wherein the drain and the source are arranged at intervals along a length direction of the channel, and
the source, the drain, and the channel are each made of a semiconductor material.
2 . The transistor according to claim 1 , wherein at least one of the source or the drain are/is made of a doped semiconductor material.
3 . The transistor according to claim 2 , wherein the source and the drain are each made of a doped polycrystalline silicon material.
4 . The transistor according to claim 3 , wherein doping types of the source and the drain match a conductive type of the channel.
5 . The transistor according to claim 4 , wherein the conductive type of the channel is an N type, and the doping types of the source and the drain are both N-type heavy doping; or
the conductive type of the channel is a P type, and the doping types of the source and the drain are both P-type heavy doping.
6 . The transistor according to claim 1 , wherein a material of the channel comprises indium gallium zinc oxide, polycrystalline silicon, monocrystalline silicon, silicon-germanium, or silicon carbide.
7 . The transistor according to claim 1 , wherein the channel comprises a top wall, a bottom wall, and a sidewall that enclose the accommodation space, the top wall is provided with an opening, and the second end of the gate is exposed outside the accommodation space from the opening.
8 . The transistor according to claim 7 , wherein one of the source and the drain covers the bottom wall of the channel and covers a part of the sidewall close to the bottom wall; and
the other of the source and the drain covers the top wall of the channel and covers a part of the sidewall close to the top wall.
9 . The transistor according to claim 1 , wherein a cross section of the gate is circular, elliptical, square, rectangular, trapezoidal, or cross-shaped.
10 . A memory, comprising a plurality of transistors according to claim 1 .