Semiconductor memory device
Provided is a semiconductor memory device comprising a device isolation pattern in a substrate and defining first and second active sections spaced apart from each other, wherein a center of the first active section is adjacent to an end of the second active section, a bit line that crosses over the center of the first active section, a bit-line contact between the bit line and the first active section, and a first storage node pad on the end of the second active section. The first storage node pad includes a first pad sidewall and a second pad sidewall. The first pad sidewall is adjacent to the bit-line contact. The second pad sidewall is opposite to the first pad sidewall. When viewed in plan, the second pad sidewall is convex in a direction away from the bit-line contact.
1 . A semiconductor memory device, comprising:
a device isolation pattern in a substrate and defining a first active section and a second active section that are spaced apart from each other, a center of the first active section being adjacent to an end of the second active section;
a bit line that crosses over the center of the first active section;
a bit-line contact between the bit line and the first active section; and
a first storage node pad on the end of the second active section,
wherein the first storage node pad contacts an upper surface, a first sidewall, and a second sidewall of the second active section,
wherein the first storage node pad includes a first pad sidewall and a second pad sidewall, the first pad sidewall being adjacent to the bit-line contact, and the second pad sidewall being opposite to the first pad sidewall,
wherein, when viewed in plan, the second pad sidewall is convex in a direction away from the bit-line contact, and
wherein the first active section and the second active section extend above the upper surface of the device isolation pattern.
2 . The semiconductor memory device of claim 1 , further comprising:
a first word line in the substrate and extending in a first direction, the first word line running across both of the first active section and the second active section;
a second word line in the substrate and spaced apart from the first word line, the second word line extending in the first direction and running across the first active section;
a first gate dielectric layer between the first word line and the substrate; and
a second gate dielectric layer between the second word line and the substrate,
wherein, when viewed in plan, the first storage node pad is between the first word line and the second word line, and
wherein a center of a width of the first storage node pad is not on an imaginary line that is parallel to the first direction and passes through a center of an interval between the first gate dielectric layer and the second gate dielectric layer, the width of the first storage node pad being measured in a second direction orthogonal to the first direction.
3 . The semiconductor memory device of claim 1 , further comprising:
a first word line in the substrate and extending in a first direction, the first word line running across both of the first active section and the second active section; and
a second word line in the substrate and spaced apart from the first word line, the second word line extending in the first direction and running across the first active section,
wherein, when viewed in plan, the first storage node pad is between the first word line and the second word line, and
wherein a first interval between the first word line and the first storage node pad is different from a second interval between the second word line and the first storage node pad.
4 . The semiconductor memory device of claim 1 ,
wherein a top surface of the device isolation pattern is lower than a top surface of the substrate, and
wherein the bit-line contact covers the top surface of the substrate and a sidewall of the substrate.
5 . The semiconductor memory device of claim 1 ,
wherein the device isolation pattern further defines a third active section that is spaced apart from the second active section across the first active section, an end of the third active section being adjacent to the center of the first active section,
wherein the semiconductor memory device further comprises a second storage node pad on the end of the third active section, and
wherein the second storage node pad has a mirror-symmetrical shape to the first storage node pad.
6 . The semiconductor memory device of claim 1 , wherein, when viewed in plan, the first pad sidewall is recessed in the direction away from the bit-line contact.
7 . The semiconductor memory device of claim 6 , wherein a curvature of the second pad sidewall is different from a curvature of the first pad sidewall.
8 . The semiconductor memory device of claim 6 ,
wherein the first storage node pad further includes a third pad sidewall that connects the first pad sidewall and the second pad sidewall to each other, and
wherein the third pad sidewall is flat or convex.
9 . A semiconductor memory device, comprising:
a device isolation pattern in a substrate and defining a first active section and a second active section that are spaced apart from each other, a center of the first active section being adjacent to an end of the second active section;
a first word line in the substrate and extending in a first direction, the first word line running across both of the first active section and the second active section;
a second word line in the substrate and spaced apart from the first word line, the second word line extending in the first direction and running across the first active section;
a word-line capping pattern on each of the first word line and the second word line;
a bit line that crosses over the center of the first active section;
a bit-line contact between the bit line and the first active section; and
a storage node pad on the end of the second active section,
wherein the storage node pad contacts an upper surface, a first sidewall, and a second sidewall of the second active section,
wherein, when viewed in plan, the storage node pad is between the first word line and the second word line,
wherein a first interval between the first word line and the storage node pad is different from a second interval between the second word line and the storage node pad,
wherein the first active section and the second active section extend above the upper surface of the device isolation pattern,
wherein the storage node pad includes a first pad sidewall adjacent to the bit-line contact and a second pad sidewall opposite to the first pad sidewall, and
wherein, when viewed in plan, the second pad sidewall is convex in a direction away from the bit-line contact.
10 . The semiconductor memory device of claim 9 , wherein, when viewed in plan, the first pad sidewall is recessed in the direction away from the bit-line contact.
11 . The semiconductor memory device of claim 9 ,
wherein the storage node pad further includes a third pad sidewall that connects the first pad sidewall and the second pad sidewall to each other, and
wherein the third pad sidewall is flat or convex.
12 . A semiconductor memory device, comprising:
a device isolation pattern in a substrate and defining a first active section and a second active section that are spaced apart from each other, a center of the first active section being adjacent to an end of the second active section;
a first word line in the substrate and extending in a first direction, the first word line running across both of the first active section and the second active section;
a second word line in the substrate and spaced apart from the first word line, the second word line extending in the first direction and running across the first active section;
a first gate dielectric layer between the first word line and the substrate;
a second gate dielectric layer between the second word line and the substrate;
a bit line that crosses over the center of the first active section;
a bit-line contact between the bit line and the first active section; and
a storage node pad on the end of the second active section,
wherein the storage node pad contacts an upper surface, a first sidewall, and a second sidewall of the second active section,
wherein, when viewed in plan, the storage node pad is between the first word line and the second word line,
wherein a center of a width of the storage node pad is not on an imaginary line that is parallel to the first direction and passes through a center of an interval between the first gate dielectric layer and the second gate dielectric layer, the width of the storage node pad being measured in a second direction orthogonal to the first direction,
wherein the first active section and the second active section extend above the upper surface of the device isolation pattern,
wherein the storage node pad includes a first pad sidewall adjacent to the bit-line contact and a second pad sidewall opposite to the first pad sidewall, and
wherein, when viewed in plan, the second pad sidewall is convex in a direction away from the bit-line contact.
13 . The semiconductor memory device of claim 12 , wherein, when viewed in plan, the first pad sidewall is recessed in the direction away from the bit-line contact.
14 . The semiconductor memory device of claim 12 ,
wherein the storage node pad further includes a third pad sidewall that connects the first pad sidewall and the second pad sidewall to each other, and
wherein the third pad sidewall is flat or convex.
15 . The semiconductor memory device of claim 12 , wherein a bottom end of the bit-line contact and a bottom end of the storage node pad are lower than a top surface of the substrate.