Conductive film and method for producing the same
The conductive film that includes: particles of a layered material including one or plural layers, the one or plural layers including a layer body represented by: M m X n wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, and m is more than n but not more than 5, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom; and one or more transition elements selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, or Y.
1 . A conductive film comprising:
particles of a layered material including one or plural layers, the one or plural layers including a layer body represented by:
M m X n
wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, and m is more than n but not more than 5, and
a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom; and
one or more transition elements selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, or Y,
wherein an ion of the one or more transition elements is present between adjacent layers of the one or plural layers of the particles of the layered material.
2 . The conductive film according to claim 1 , wherein the one or more transition elements are supported on the layer body.
3 . The conductive film according to claim 1 , wherein an ion of the one or more transition elements is supported on the layer body.
4 . The conductive film according to claim 1 , wherein the particles of the layered material include plural layers, and the one or more transition elements are present between the plural layers.
5 . The conductive film according to claim 4 , wherein
the M m X n is Ti 3 C 2 ,
the transition element is Ti, and
the conductive film has a peak at 52° to 58° and a peak at 45° to 49° in a profile obtained by X-ray diffraction measurement.
6 . The conductive film according to claim 1 , wherein
the M m X n is Ti 3 C 2 ,
the transition element is Ti, and
the conductive film has a peak at 52° to 58° and a peak at 45° to 49° in a profile obtained by X-ray diffraction measurement.
7 . The conductive film according to claim 1 , wherein the conductive film has a first peak at 52° to 58° and a second peak at 45° to 49° in a profile obtained by X-ray diffraction measurement.
8 . The conductive film according to claim 7 , wherein an angle difference between the first peaks and the second peak is in a range of 7° to 10°.
9 . An electrode including the conductive film according to claim 1 .
10 . An electromagnetic shield including the conductive film according to claim 1 .
11 . A method for producing a conductive film, the method comprising:
(a1) preparing a precursor film including particles of a layered material including one or plural layers, the one or plural layers including a layer body represented by:
M m X n
wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, and m is more than n but not more than 5, and
a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, or a hydrogen atom; and
(b1) coating the precursor film with a solution containing one or more transition elements selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, or Y in a solvent as ions,
wherein the one or more transition elements are present between adjacent layers of the one or plural layers of the particles of the layered material in the conductive film.
12 . The method for producing the conductive film according to claim 11 , wherein the one or more transition elements are supported on the layer body in the conductive film.
13 . The method for producing the conductive film according to claim 11 , wherein an ion of the one or more transition elements is supported on the layer body in the conductive film.
14 . The method for producing the conductive film according to claim 11 , wherein the particles of the layered material include plural layers, and the one or more transition elements are present between the plural layers in the conductive film.
15 . The method for producing the conductive film according to claim 14 , wherein
the M m X n is Ti 3 C 2 ,
the transition element is Ti, and
the conductive film has a peak at 52° to 58° and a peak at 45° to 49° in a profile obtained by X-ray diffraction measurement.
16 . The method for producing the conductive film according to claim 11 , wherein
the M m X n is Ti 3 C 2 ,
the transition element is Ti, and
the conductive film has a peak at 52° to 58° and a peak at 45° to 49° in a profile obtained by X-ray diffraction measurement.
17 . The method for producing the conductive film according to claim 11 , wherein the conductive film has a first peak at 52° to 58° and a second peak at 45° to 49° in a profile obtained by X-ray diffraction measurement.
18 . The method for producing the conductive film according to claim 17 , wherein an angle difference between the first peak and the second peak is in a range of 7° to 10°.
19 . A method for producing a conductive film, the method comprising:
(a2) preparing a MAX phase, the MAX phase represented by:
M m AX n
wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, A is at least one element of Group 12, 13, 14, 15, or 16, n is 1 to 4, and m is more than n and 5 or less;
(b2) performing an etching treatment of removing at least a part of the A atoms from the MAX phase using an etching liquid to obtain an etched product;
(c2) performing an intercalation treatment of a monovalent metal ion including a step of mixing the etched product and a metal compound containing a monovalent metal ion to produce an intercalated product;
(d2) performing a transition element intercalation treatment including a step of mixing the intercalated product with a solution containing one or more transition elements selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, or Y in a solvent as ions to obtain a transition element intercalated product; and
(e2) obtaining a conductive film by at least partially removing the solvent from the transition element intercalated product,
wherein the one or more transition elements are present between adjacent layers of the transition element intercalated product in the conductive film.