Cleaning method, substrate processing method and plasma processing apparatus
Provided is a cleaning method in a plasma processing apparatus for substrates. This cleaning method comprises: (a) forming a plasma in a chamber of the plasma processing apparatus while a substrate is not being held in place by an electrostatic chuck in the chamber; and (b) supplying voltage to the electrostatic chuck to reduce the charge on the surface of the electrostatic chuck while plasma is being formed in (a).
1 . A cleaning method in a plasma processing apparatus for plasma processing a substrate, the method comprising:
(a) forming a plasma in a chamber of the plasma processing apparatus while a substrate is not being held in place by an electrostatic chuck in the chamber;
(b) supplying voltage to the electrostatic chuck to reduce charge on a surface of the electrostatic chuck while plasma is being formed in (a); and
(c) measuring charged state on the surface of the electrostatic chuck while plasma is being formed in (a),
wherein the voltage to be supplied to the electrostatic chuck in (b) is determined on a basis of the charged state on the surface of the electrostatic chuck measured in (c).
2 . The cleaning method according to claim 1 ,
wherein (a) includes supplying power for forming plasma,
wherein the supply of voltage to the electrostatic chuck in (b) begins after the supply of power for forming plasma has begun in (a), and
wherein the supply of voltage to the electrostatic chuck in (b) stops before the supply of power for forming plasma has stopped in (a).
3 . The cleaning method according to claim 1 , wherein
(a) includes supplying processing gas,
the supply of voltage to the electrostatic chuck in (b) begins after the supply of processing gas has begun in (a), and
the supply of voltage to the electrostatic chuck in (b) stops before the supply of processing gas has stopped in (a).
4 . The cleaning method according to claim 1 , wherein the voltage to be supplied to the electrostatic chuck in (b) is determined from measurement results for the charged state on the surface of the electrostatic chuck in (c) on the basis of a relationship between the charged state on the surface of the electrostatic chuck and the voltage to be supplied to the electrostatic chuck in the charged state on the surface of the electrostatic chuck.
5 . The cleaning method according to claim 1 , wherein plasma is formed in the chamber in (a) to clean the surface of the electrostatic chuck in the chamber.
6 . The cleaning method according to claim 1 , wherein plasma is formed in the chamber in (a) to clean an interior of the chamber.
7 . The cleaning method according to claim 1 , the method comprising:
(a1) forming a plasma in a chamber of the plasma processing apparatus while a substrate is not being held in place by an electrostatic chuck in the chamber to clean an interior of the chamber;
(b1) supplying voltage to the electrostatic chuck to reduce the charge on the surface of the electrostatic chuck while plasma is being formed in (a1);
(a2) forming a plasma in a chamber of the plasma processing apparatus while a substrate is not being held in place by the electrostatic chuck in the chamber to clean the surface of the electrostatic chuck in the chamber; and
(b2) supplying voltage to the electrostatic chuck to reduce the charge on the surface of the electrostatic chuck while plasma is being formed in (a2).
8 . The cleaning method according to claim 7 , wherein the voltage supplied to the electrostatic chuck in (b1) and in (b2) is different.
9 . A cleaning method in a plasma processing apparatus, the plasma processing apparatus comprising:
a chamber;
an electrostatic chuck for holding a substrate in place in the chamber;
a gas supply for supplying a processing gas in the chamber; and
a plasma generator for forming a plasma from the processing gas, the method comprising:
(a) starting to supply the processing gas in the chamber while a substrate is not being held in place by the electrostatic chuck;
(b) starting to supply power for forming plasma to the plasma generator after (a);
(c) starting to supply voltage to the electrostatic chuck after (b); and
(d) measuring charged state on the surface of the electrostatic chuck while plasma is being formed in (b),
wherein the voltage to be supplied to the electrostatic chuck in (c) is determined on a basis of the charged state on the surface of the electrostatic chuck measured in (d).
10 . The cleaning method according to claim 9 , wherein (c) is performed while plasma is being formed in the chamber.
11 . The cleaning method according to claim 9 , further comprising:
(e) stopping the supply of voltage to the electrostatic chuck;
(f) stopping the supply of power for forming plasma after (e); and
(g) stopping the supply of processing gas in the chamber after (f).
12 . The cleaning method according to claim 11 , wherein the processing gas is supplied continuously in time between starting the supply of processing gas in (a) and stopping the supply of processing gas in (g).
13 . The cleaning method according to claim 11 , wherein the power for forming plasma is supplied continuously in time between starting the supply of power for forming plasma in (b) and stopping the supply of power for forming plasma in (f).