Spin orbit torque magnetic memory devices, operating methods thereof, and electronic apparatuses including the magnetic memory devices
Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer, and an SOT-based local magnetic field generation layer to cross the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and an upper electrode layer disposed to face the first SOT layer with the MTJ layer therebetween and in contact with the MTJ layer. The SOT magnetic memory device includes five operating terminals.
1 . A spin orbit torque (SOT) magnetic memory device comprising:
a first SOT layer;
a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer;
an SOT-based local magnetic field generation layer crossing the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and
an upper electrode layer facing the first SOT layer with the MTJ layer therebetween and being in contact with the MTJ layer,
wherein the SOT magnetic memory device includes five operating terminals
wherein the upper electrode layer is a line layer, and
wherein the upper electrode layer and the first SOT layer cross from each other and the MTJ layer is at cross point of the upper electrode layer and the first SOT layer.
2 . The SOT magnetic memory device of claim 1 , wherein the SOT-based local magnetic field generation layer includes a first layer.
3 . The SOT magnetic memory device of claim 2 , wherein the first layer includes a magnetic SOT layer and/or a synthetic antiferromagnetic (SAF) layer.
4 . The SOT magnetic memory device of claim 2 , further comprising:
a second layer between the first layer and the first SOT layer in the generating region.
5 . The SOT magnetic memory device of claim 4 , wherein
the first layer includes at least one of a second SOT layer, a magnetic SOT layer, and a SAF layer, and
the second layer includes at least one of a magnetic layer, an insulating layer, and a SAF layer.
6 . The SOT magnetic memory device of claim 5 , wherein the insulating layer includes an oxide.
7 . The SOT magnetic memory device of claim 4 , further comprising:
a third layer between the second layer and the first SOT layer in the generating region.
8 . The SOT magnetic memory device of claim 7 , wherein
the first layer includes a second SOT layer,
the second layer includes a magnetic layer, and
the third layer includes an insulating layer.
9 . The SOT magnetic memory device of claim 1 , wherein
the first SOT layer, the MTJ layer, the SOT-based local magnetic field generation layer, and the upper electrode layer correspond to a memory cell,
the SOT magnetic memory device includes a plurality of memory cells including the memory cell, and
the first SOT layer is shared by the plurality of memory cells.
10 . A display device including a display driver IC (DDI), the DDI comprising:
a controller;
a power supply circuit unit connected to the controller;
a driver block connected to the power supply circuit unit and a memory block; and
the memory block is connected to the controller, the power supply circuit unit, and the driver block,
wherein the memory block comprises the spin orbit torque (SOT) magnetic memory device of claim 1 .
11 . An electronic system comprising:
a memory controller;
a memory device connected to the memory controller, the memory device including the spin orbit torque (SOT) magnetic memory device of claim 1 ; and
a host system configured to communicate with the memory controller,
wherein the memory controller is configured to control the memory device to read data and write data to the memory device in response to a request from the host system.
12 . An electronic apparatus comprising the spin orbit torque (SOT) magnetic memory device of claim 1 .
13 . An operating method of a spin orbit torque (SOT) magnetic memory device comprising a magnetic tunnel junction (MTJ) layer, the operating method comprising:
forming a magnetic moment aligned in a first direction in a generating region of a SOT-based material layer spaced apart from the MTJ layer, the generating region generating a magnetic field reaching a free layer of the MTJ layer; and
after forming the magnetic moment, supplying a spin current to the free layer of the MTJ layer in a state that the magnetic field is present,
wherein the SOT magnetic memory device further comprises:
a first SOT layer, the MTJ layer being on one surface of the first SOT layer; and
an upper electrode layer facing the first SOT layer with the MTJ layer therebetween and being in contact with the MTJ layer,
wherein the upper electrode layer is a line layer, and
wherein the upper electrode layer and the first SOT layer cross from each other and the MTJ layer is at cross point of the upper electrode layer and the first SOT layer.
14 . The operating method of claim 13 , further comprising:
after forming the magnetic moment by applying a first current to the SOT-based material layer, stopping application of the first current before supplying the spin current.
15 . The operating method of claim 13 , further comprising:
after completing the supplying of the spin current, measuring a resistance of the MTJ layer; and
comparing the measured resistance with a reference resistance.
16 . The operating method of claim 13 , wherein the SOT-based material layer includes a magnetic SOT layer or an SAF layer.
17 . The operating method of claim 13 , wherein the SOT-based material layer includes a first layer and a second layer sequentially stacked in the generating region, and
wherein the first layer includes at least one of a non-magnetic SOT layer, a magnetic SOT layer, and an SAF layer, and the second layer includes at least one of a magnetic layer, an insulating layer, and an SAF layer.
18 . The operating method of claim 13 , wherein the SOT-based material layer includes first to third layers sequentially stacked in the generating region, and
wherein the first layer includes a non-magnetic SOT layer, the second layer includes a magnetic layer, and the third layer includes an insulating layer.
19 . The operating method of claim 13 , further comprising:
after forming the magnetic moment by applying a first current to the SOT-based material layer, reducing application of the first current before supplying the spin current.
20 . A method of manufacturing a spin orbit torque (SOT) magnetic memory device, the method comprising:
forming a first SOT layer;
forming a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer;
forming an SOT-based local magnetic field generation layer crossing the first SOT layer; and
forming an upper electrode layer facing the first SOT layer with the MTJ layer therebetween and being in contact with the MTJ layer and the first SOT layer,
wherein the upper electrode layer is a line layer, and
wherein the upper electrode layer and the first SOT layer cross from each other and the MTJ layer is at cross point of the upper electrode layer and the first SOT layer.