Current sensor system
An apparatus, including: one or more first conductive layers; a plurality of second conductive layers that are electrically coupled to the first conductive layers, the first conductive layers and the second conductive layers being arranged to form a conductor, the first conductive layers being arranged to define a rift in the conductor, the rift being formed by using a plurality of through-holes that are situated above or below each other, each of the plurality of through-holes being formed in a different one of the second conductive layers, each of the plurality of through-holes being formed directly above or below a solid portion of at least one of the first conductive layers; and a dielectric material that is arranged to encapsulate, at least in part, the first conductive layers and the second conductive layers.
1 . An apparatus, comprising:
one or more first conductive layers;
a plurality of second conductive layers that are electrically coupled to the first conductive layers, the first conductive layers and the second conductive layers being arranged to form a conductor, the first conductive layers being arranged to define a rift in the conductor, the rift being formed by using a plurality of through-holes that are situated above or below each other, each of the plurality of through-holes being formed in a different one of the second conductive layers, each of the plurality of through-holes being formed directly above or below a solid portion of at least one of the first conductive layers, at least two of the plurality of through-holes having different respective sizes; and
a dielectric material that is arranged to encapsulate, at least in part, the first conductive layers and the second conductive layers,
wherein the rift is arranged to cause an area directly above the rift to have a substantially uniform magnetic coupling coefficient.
2 . The apparatus of claim 1 , wherein at least two of the plurality of through-holes have different widths.
3 . The apparatus of claim 1 , wherein at least one of the first conductive layers is disposed between two different ones of the plurality of second conductive layers.
4 . The apparatus of claim 1 , wherein the rift has a tapered cross-section.
5 . The apparatus of claim 1 , wherein:
each of the plurality of second conductive layers includes a respective first portion, a respective second portion, and a respective third portion that is disposed between the respective first portion and the respective second portion;
each of the plurality of through-holes is formed in the respective third portion of a different one of the plurality of second conductive layers; and
the respective third portions of at least two of the plurality of second conductive layers are electrically coupled to each other by a conducive via extending from the respective third portion of one of the plurality of second conductive layers to the respective third portion of another one of the plurality of second conductive layers.
6 . The apparatus of claim 1 , wherein the one or more first conductive layers includes a plurality of first conductive layers, and at least two of the plurality of first conductive layers are coupled to each other via a conductive via, the conductive via extending from one of the plurality of first conductive layers to another one of the plurality of first conductive layers.
7 . The apparatus of claim 1 , further comprising a conductive via that is arranged to couple at least two of the plurality of second conductive layers, the conductive via extending from one of the plurality of second conductive layers to another one of the plurality of second conductive layers.
8 . The apparatus of claim 1 , further comprising a current sensor that is mounted over the rift and arranged to measure a level of electrical current through the conductor.
9 . An apparatus, comprising:
one or more first conductive layers;
a plurality of second conductive layers that are electrically coupled to the first conductive layers, the first conductive layers and the second conductive layers being arranged to form a conductor, the first conductive layers being arranged to define a rift in the conductor, the rift being formed by using a plurality of through-holes that are situated above or below each other, each of the plurality of through-holes being formed in a different one of the second conductive layers, each of the plurality of through-holes being formed directly above or below a solid portion of at least one of the first conductive layers;
a conductive via that is arranged to couple one of the first or second conductive layers to another one of the first or second conductive layers; and
a dielectric material that is arranged to encapsulate, at least in part, the first conductive layers and the second conductive layers,
wherein the rift is arranged to cause an area directly above the rift to have a substantially uniform magnetic coupling coefficient.
10 . The apparatus of claim 9 , wherein at least two of the plurality of through-holes have different sizes.
11 . The apparatus of claim 9 , wherein at least one of the first conductive layers is disposed between two different ones of the plurality of second conductive layers.
12 . The apparatus of claim 9 , wherein:
each of the plurality of second conductive layers includes a respective first portion, a respective second portion, and a respective third portion that is disposed between the respective first portion and the respective second portion;
each of the plurality of through-holes is formed in the respective third portion of a different one of the plurality of second conductive layers; and
the conductive via extends from the respective third portion of one of the second conductive layers to the respective third portion of another one of the plurality of second conductive layers.
13 . The apparatus of claim 9 , wherein the one or more first conductive layers includes a plurality of first conductive layers, and the conductive via extends from one of the plurality of first conductive layers to another one of the plurality of first conductive layers.
14 . The apparatus of claim 9 , wherein the conductive via extends from one of the plurality of second conductive layers to another one of the plurality of second conductive layers.
15 . The apparatus of claim 9 , wherein the conductive via is formed on one end of the first and second conductive layers and arranged to couple the first and second conductive layers to each other.
16 . The apparatus of claim 9 , further comprising a current sensor that is installed over the rift and arranged to measure a level of electrical current through the conductor.
17 . An apparatus, comprising:
one or more first conductive layers;
a plurality of second conductive layers that are electrically coupled to the first conductive layers, the first conductive layers and the second conductive layers being arranged to form a conductor, the first conductive layers being arranged to define a rift in the conductor, the rift being formed by using a plurality of through-holes that are situated above or below each other, each of the plurality of through-holes being formed in a different one of the second conductive layers, each of the plurality of through-holes being formed directly above or below a solid portion of at least one of the first conductive layers; and
a dielectric material that is arranged to encapsulate, at least in part, the first conductive layers and the second conductive layers,
wherein the rift is arranged to cause an area directly above the rift to have a substantially uniform magnetic coupling coefficient.
18 . The apparatus of claim 17 , further comprising a conductive via that is arranged to couple one of the first or second conductive layers to another one of the first or second conductive layers.
19 . The apparatus of claim 17 , wherein at least two of the plurality of through-holes have different respective sizes.
20 . The apparatus of claim 17 , further comprising a current sensor that is installed over the rift and arranged to measure a level of electrical current through the conductor.
21 . The apparatus of claim 17 , wherein the one or more first conductive layers incudes a plurality of first conductive layers, at least two of the plurality of first conductive layers have different widths.
22 . The apparatus of claim 17 , wherein at least two of the second conductive layers have different widths.
23 . The apparatus of claim 17 , wherein the one or more first conductive layers includes a plurality of first conductive layers, and at least two of the plurality of first conductive layers are coupled by a conductive via that is situated directly below the rift.
24 . The apparatus of claim 17 , wherein at least one of the first conductive layers has a different width than at least one of the plurality of second conductive layers.