Vertical cavity surface-emitting laser threshold magnetometer
A threshold magnetometer includes a vertical cavity surface-emitting laser with a first material that is disposed in one of the layers. The first material is configured as an absorbent material or emission material to light propagating in the optical resonator. As an absorbent material, the first material absorbs light when exposed to radio frequency (RF) radiation at one or more resonant frequencies. As an emission material, the first material intensifies light when exposed to RF radiation at one or more resonant frequencies. The resultant intensity change can be detected and used to determine characteristics of an external magnetic field.
1 . A threshold magnetometer, comprising:
a probe light source configured to generate probe light; and
a vertical cavity surface-emitting laser (VCSEL) comprising the probe light source or optically coupled to an output of the probe light source, the VCSEL comprising:
a first layer comprising at least one first reflecting or scattering element configured to receive the probe light,
a third layer comprising at least one second reflecting or scattering element configured to reflect or scatter the probe light and to pass output light generated from the probe light at an intensity, wherein the at least one first reflecting or scattering element and the at least one second reflecting or scattering element are optically coupled to form an optical resonator,
a second layer in between the at least one first reflecting or scattering element and the at least one second reflecting or scattering element, the second layer comprising a first material disposed in the optical resonator, wherein the first material, in response to a optical contact from a pump light at an excitation frequency of the first material, absorbs or intensifies light propagating in the optical resonator,
wherein the intensity of the output light changes in response to the intensifying or absorption of the light propagating in the optical resonator by the first material.
2 . The threshold magnetometer of claim 1 , further comprising a detector coupled to the optical resonator, wherein the detector is configured to receive the output light and to detect a change in the intensity of the output light; and
at least one processor coupled to the detector, wherein the at least one processor is configured to determine one or more characteristics of an external magnetic field in response to the detection of the change in the intensity of the output light.
3 . The threshold magnetometer of claim 2 , further comprising a magnetic field generator, wherein the magnetic field generator is configured to radiate a bias magnetic field to the first material,
wherein the at least one processor is configured to determine the one or more characteristics of the external magnetic field based on one or more characteristics of the bias magnetic field generated by the magnetic field generator.
4 . The threshold magnetometer of claim 1 , further comprising a radio frequency (RF) scanner, wherein the RF scanner is configured to radiate an RF field to the first material, wherein the RF field includes a range of frequencies that includes at least one resonant frequency associated with the first material,
wherein in response to receiving the RF field at the at least one resonant frequency, the first material is configured to intensify or absorb the light propagating in the optical resonator.
5 . The threshold magnetometer of claim 1 , further comprising a pump light source, wherein the pump light source is configured to generate the light at the excitation frequency of the first material.
6 . The threshold magnetometer of claim 1 , comprising a gain layer that includes a gain medium disposed in the optical resonator, wherein the gain medium amplifies the probe light in the optical resonator.
7 . The threshold magnetometer of claim 1 , wherein the probe light is generated at a first frequency and at a first intensity,
wherein when the first intensity of the probe light exceeds a first power threshold, the optical resonator is configured to undergo a nonlinear photon generation process to generate a light at a second frequency different from the first frequency, wherein the output light is at the second frequency,
wherein the first material is configured, in response to receiving the light at the excitation frequency, to absorb the probe light at the first frequency, wherein the first material has a nonlinear optical susceptibility such that, by absorbing the probe light, the first material adjusts a threshold power level needed for the optical resonator to undergo the nonlinear photon generation process from the first power threshold to a second power threshold higher than the first power threshold,
wherein when the intensity of the probe light at the first frequency is below the second power threshold, the optical resonator is not able to generate the output light at the second frequency,
wherein the intensity of the output light decreases in response to the first intensity of the probe light being below the second power threshold.
8 . A vertical cavity surface-emitting laser (VCSEL) configured for operation in a threshold magnetometer, the VCSEL comprising:
a probe light source configured to generate probe light; and
a first layer comprising at least one first reflecting or scattering element configured to receive the probe light,
a third layer comprising at least one second reflecting or scattering element configured to reflect or scatter output light generated from the probe light at an intensity,
wherein the at least one first reflecting or scattering element and the at least one second reflecting or scattering element are optically coupled to form an optical resonator,
a second layer in between the at least one first reflecting or scattering element and the at least one second reflecting or scattering element, the second layer comprising a first material disposed in the optical resonator, wherein the first material, in response to a optical contact from a pump light at an excitation frequency of the first material, intensifies or absorbs a light propagating in the optical resonator,
wherein the intensity of the output light changes in response to the intensifying or absorption of the light propagating in the optical resonator by the first material.
9 . The VCSEL of claim 8 , further comprising a detector disposed on an end of the VCSEL, wherein the detector is configured to receive the output light and to detect a change in the intensity of the output light,
wherein the detector is configured to generate a signal to at least one processor indicating that the change in the intensity of the output light has been detected.
10 . The VCSEL of claim 8 , further comprising an optical filter disposed on a fourth layer of the VCSEL, wherein the optical filter is configured to filter out the probe light from the output light.
11 . The VCSEL of claim 8 , wherein the at least one first reflecting or scattering element and the at least one second reflecting or scattering element comprise a series of distributed Bragg reflectors.
12 . The VCSEL of claim 8 , further comprising a gain layer comprising a gain medium, wherein the gain medium is configured to amplify an intensity of the light propagating in the optical resonator.
13 . The VCSEL of claim 12 , further comprising an adhesion layer that couples the gain layer to the second layer in the optical resonator.
14 . The VCSEL of claim 8 , wherein the probe light is generated at a first frequency and at a first intensity,
wherein when the first intensity of the probe light exceeds a first power threshold, the optical resonator is configured to undergo a nonlinear photon generation process to generate a light at a second frequency different from the first frequency, wherein the output light is at the second frequency,
wherein the first material is configured, in response to receiving the pump light at the excitation frequency, to absorb the probe light at the first frequency, wherein the first material has a nonlinear optical susceptibility such that, by absorbing the probe light, the first material adjusts a threshold power level needed for the optical resonator to undergo the nonlinear photon generation process from the first power threshold to a second power threshold higher than the first power threshold,
wherein when the intensity of the probe light at the first frequency is below the second power threshold, the optical resonator is not able to generate the output light at the second frequency,
wherein the intensity of the output light decreases in response to the first intensity of the probe light being below the second power threshold.
15 . The VCSEL of claim 8 , wherein the second layer is composed of a nitrogen-vacancy (NV) diamond material comprising multiple point defects.
16 . A method for operating a threshold magnetometer, wherein the threshold magnetometer comprises a vertical cavity surface-emitting laser (VCSEL), the method comprising:
receiving or generating a probe light from a probe light source;
generating, from an optical resonator in the VCSEL, a output light form the probe light, wherein the optical resonator comprises at least one first reflecting or scattering element disposed on a first layer of the VCSEL and at least one second reflecting or scattering element disposed on a third layer of the VCSEL;
receiving, at a first material disposed on a second layer of the VCSEL in the optical resonator, a pump light at an excitation frequency of the first material, wherein the first material is configured, in response to a optical contact from the pump light at the excitation frequency, to intensify or absorb a light propagating in the optical resonator;
receiving, at the first material disposed on the second layer of the VCSEL, a radio frequency (RF) emission at a range of frequencies, wherein the range of frequencies includes at least one resonant frequency of the first material;
detecting, by a detector disposed on an end of the VCSEL, an intensity change of the output light in response to excitation of the first material from the pump light; and
determining one or more characteristics of an external magnetic field based on the RF emission received at the first material in response to detecting the intensity change of the output light.
17 . The method of claim 16 , comprising filtering, by an optical filter disposed on a fourth layer of the VCSEL, the probe light from the output light output from the optical resonator.
18 . The method of claim 16 , comprising amplifying, by a gain medium disposed on a fifth layer of the VCSEL an intensity of the light propagating in the optical resonator, wherein the gain medium is coupled to the first material by an adhesion layer.
19 . The method of claim 16 , wherein the at least one first reflecting or scattering element and the at least one second reflecting or scattering element comprises a series of distributed Bragg reflectors.
20 . The method of claim 16 , wherein the second layer is composed of a nitrogen-vacancy (NV) diamond material comprising multiple point defects.